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Donkers, Valkenswaard
Johannas J. T. M. Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20110186841 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device ( | 08-04-2011 |
Johannes Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20090203184 | Self-Aligned Epitaxially Grown Bipolar Transistor - The illumination system has a light source ( | 08-13-2009 |
| 20100052081 | A SEALING STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a structure ( | 03-04-2010 |
| 20100176426 | TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transistor ( | 07-15-2010 |
Johannes Josephus Theodorus Marin Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20100047987 | METHOD OF FABRICATING A BIPOLAR TRANSISTOR - The invention provides a method for fabricating a bipolar transistor applying a standard shallow trench isolation fabrication method to simultaneously form a vertical bipolar transistor ( | 02-25-2010 |
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20080237871 | Method of Manufacturing a Semiconductor Device and Semiconductor Device Obtained With Such a Method - The invention relates to a method of manufacturing a semiconductor device ( | 10-02-2008 |
| 20090203214 | SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE OBTAINED BY SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 08-13-2009 |
| 20110121364 | HETEROJUNCTION BIPOLAR TRANSISTOR - According to an example embodiment, a heterostructure bipolar transistor, HBT, includes shallow trench isolation, STI, structures around a buried collector drift region in contact with a buried collector. A gate stack including a gate oxide and a gate is deposited and etched to define a base window over the buried collector drift region and overlapping the STI structures. The etching process is continued to selectively etch the buried collector drift region between the STI structures to form a base well. SiGeC may be selectively deposited to form epitaxial silicon-germanium in the base well in contact with the buried collector drift region and poly silicon-germanium on the side walls of the base well and base window. Spacers are then formed as well as an emitter. | 05-26-2011 |
| 20110198591 | METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR - Disclosed is a method of forming a heterojunction bipolar transistor (HBT), comprising depositing a first stack comprising an polysilicon layer ( | 08-18-2011 |
| 20120037914 | HETEROJUNCTION BIOPOLAR TRANSISTOR AND MANUFACTURING METHOD - A method of manufacturing a heterojunction bipolar transistor, including providing a substrate comprising an active region bordered by shallow trench insulation regions; depositing a stack of a dielectric layer and a polysilicon layer over the substrate; forming a base window in the stack, the base window extending over the active region and part of the shallow trench insulation regions, the base window having a trench extending vertically between the active region and one of the shallow trench insulation regions; growing an epitaxial base material inside the base window; forming a spacer on the exposed side walls of the base material; and filling the base window with an emitter material. A HBT manufactured in this manner and an IC including such an HBT. | 02-16-2012 |
Johannes Josephus Theodorus Martinus Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20120038002 | IC AND IC MANUFACTURING METHOD - Disclosed is a method of manufacturing a vertical bipolar transistor in a CMOS process, comprising implanting an impurity of a first type into a the substrate ( | 02-16-2012 |
Johannes J.t.m. Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20080233688 | Method of Fabricating a Bipolar Transistor - A method of fabricating a bipolar transistor in a first trench ( | 09-25-2008 |
| 20090075446 | METHOD OF FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR - The invention provides a method for fabricating a heterojunction bipolar transistor with a base connecting region ( | 03-19-2009 |
| 20090166753 | Semiconductor Device and Method of Manufacturing Such a Device - The invention relates to a semiconductor device ( | 07-02-2009 |
| 20100289022 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED WITH SUCH A METHOD - The invention relates to a method of manufacturing a semiconductor device ( | 11-18-2010 |
| 20110215417 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device ( | 09-08-2011 |
| 20110304019 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICES OBTAINED THEREBY - Methods for manufacturing a bipolar transistor semiconductor device are described, along with devices fabricated in accordance with the methods. The methods include the steps of forming a stack of layers over a semiconductor body comprising a window definition layer ( | 12-15-2011 |
Johannes J. T. M. Donkers, Valkenswaard NL
| Patent application number | Description | Published |
|---|---|---|
| 20090174034 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE - The invention relates to a semiconductor device ( | 07-09-2009 |
| 20100022056 | METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR - The invention provides for an alternative and less complex method of manufacturing a bipolar transistor comprising a field plate ( | 01-28-2010 |
| 20100025808 | Bipolar Transistor And Method Of Fabricating The Same - The invention provides a bipolar transistor with a reduced collector series resistance integrated in a trench ( | 02-04-2010 |
| 20110034001 | METHOD OF MAKING BIPOLAR TRANSISTOR - A method of manufacturing a bipolar transistor is compatible with FinFET processing. A collector region ( | 02-10-2011 |
| 20110198671 | GRINGO HETEROJUNCTION BIPOLAR TRANSISTOR WITH A METAL EXTRINSIC BASE REGION - The invention relates to a semiconductor device ( | 08-18-2011 |