Patent application number | Description | Published |
20150111023 | IN-SITU HEATED DEPOSITION OF PARYLENE TO ENHANCE PORE PENETRATION INTO SILICONE - Coating porous material, such as PDMS, with parylene N, C, D, and AF-4 by vapor deposition polymerization is described in which a temperature of the porous material's surface being coated is heated to between 60° C. and 120° C., or 80° C. and 85° C., during deposition. The parylene forms nano roots within the porous material that connect with a conformal surface coating of parylene. In some embodiments, a watertight separation chamber in an integrated microfluidic liquid chromatography device is fabricated by heating tunnels in micro-fabricated PDMS and depositing parylene within the heated tunnels. | 04-23-2015 |
20150366707 | SMALL MOLECULE TRANSPORT DEVICE FOR DRUG DELIVERY OR WASTE REMOVAL - A medical device having a permeable bag connected by a non-permeable cannula to a discharge sac is described along with a manufacturing process and surgical implantation method. The permeable portions of the device have pores that are sized to be permeable to a predetermined class of small molecules, such as oxygen, nitrous oxide, or other therapeutic agents. Once absorbed inside the device, the small molecules are then passively transported, by a concentration gradient of the small molecules, to the discharge sac to be disbursed. A metal tube or other strip can be included in the cannula to assist a surgeon in orienting the device within the body. | 12-24-2015 |
Patent application number | Description | Published |
20100214813 | Memory module having a plurality of phase change memories, buffer RAM and nand flash memory - A memory module comprises a plurality of main memories; a buffer RAM configured to temporarily store data being provided to or read from the main memories and to perform a buffer function between an external device and the main memories; and a NAND flash memory configured to store data of the buffer RAM during an interruption of power being supplied to the buffer RAM. | 08-26-2010 |
20110063903 | NONVOLATILE MEMORY DEVICES, SYSTEMS HAVING THE SAME, AND WRITE CURRENT CONTROL METHODS THEREOF - Provided is a nonvolatile memory device, a memory system having the same, and a write current control method thereof. The memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device has a plurality of write modes. The memory controller includes a sensor configured to sense environment information of the memory system. The memory controller is configured to select one of the write modes according to the sensed environment information and control the nonvolatile memory device according to the selected write mode. Accordingly, the nonvolatile memory device provides a write current for appropriate current consumption in a write operation. | 03-17-2011 |
20110134620 | MEMORY CARDS AND ELECTRONIC MACHINES - Provided is a memory card. The memory card includes interconnection terminals for electric connection with an external electronic machine. The interconnection terminals may be spaced from the front side of the memory card by a distance greater than the lengths of the interconnection terminals. Alternatively, the memory card may include other interconnection terminals between its front side and the former interconnection terminals. The former and latter interconnection terminals may be used for electric connection with different kinds of electronic machines. | 06-09-2011 |
20120137040 | MULTI CHANNEL SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided. | 05-31-2012 |
20140241024 | MULTI CHANNEL SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - Disclosed is a semiconductor memory device that includes a plurality of channel memories mounted within a package and is capable of minimizing or reducing the number of through-silicon vias. With the semiconductor memory device, a row command or a row address on two or more channels is applied through a shared bus. The semiconductor memory device is capable of reducing an overhead of a die size by reducing the number of through-silicon vias. A method of driving a multi-channel semiconductor memory device including a plurality of memories, using a shared bus, is also provided. | 08-28-2014 |