Donggu
Donggu Lee, Gumi-Si KR
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20150060758 | FIELD EMISSION DEVICES AND METHODS OF MANUFACTURING EMITTERS THEREOF - A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening. | 03-05-2015 |
Donggu Shin, Seoul KR
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20150201130 | MOBILE TERMINAL AND CONTROL METHOD THEREOF - A mobile terminal includes a main body; a front camera disposed at a front side of the main body; a display disposed at the front side of the main body; and a controller configured to control the display such that the display displays a preview image within a first portion of the display, wherein the preview image is obtained via the front camera; displays the preview image within a second portion of the display in response to an input, wherein the first portion includes the second portion and further includes a remaining portion; and displays a second image within the remaining portion of the first portion in response to the input. | 07-16-2015 |
Donggu Yi, Seoul KR
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20130221447 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern. | 08-29-2013 |
20130224936 | METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - Methods of manufacturing a semiconductor device are provided. The method includes constructing and arranging a semiconductor substrate to include a first active region and a second active region and forming mold patterns on the semiconductor substrate. The mold patterns have openings that expose a top surface of the semiconductor substrate. A plurality of first semiconductor fins are formed in openings at the first active region and a plurality of second semiconductor fins in openings at the second active region and selectively recessing top surfaces of the mold patterns. A recessed depth of the mold patterns on the first active region is different than a recessed depth of the mold patterns on the second active region. A gate electrode is formed over the first and second semiconductor fins. A distance between a first semiconductor fin of the plurality of first semiconductor fins and a second semiconductor fin of the plurality of second semiconductor fins adjacent the first semiconductor fin is greater than a distance between two or more first semiconductor fins of the plurality of first semiconductor fins that are adjacent each other. | 08-29-2013 |