Patent application number | Description | Published |
20100208617 | METHOD AND SYSTEM FOR REALIZING LOCATION MANAGEMENT OF MULTIHOMED TERMINALS IN UNIVERSAL NETWORK - In Universal Network, there is disclosed a method and system for realizing location management of multihomed terminals, the system comprises home domains and foreign domains, in which the home domains of a multihomed terminal refer to the domains managing the multihomed terminal; the other domains are the foreign domains of the multihomed terminal; each domain includes at least one Identifier Mapping Server and one Accessing-Switching Router; the Identifier Mapping Server memorizes and manages the mapping information; and the Accessing-Switching Router allocates the mapping information for multihomed terminals. This invention facilitates the implement of multihoming in the Internet and makes the network resources be used efficiently. Especially, the Internet service providers can manage the multihomed terminals easily and efficiently. | 08-19-2010 |
20100226265 | METHOD OF CONCURRENT MULTIPATH TRANSFER BASED ON RELATIONAL PATHS - A method of Concurrent Multipath Transfer which is based on the relational paths, characterized in that for a packet lost in a path, it allows other packets sent from the path and/or other paths to point out the lost packet through a gap report. According to the present invention, any lost packets and abnormal paths can be found as fast as possible, and can be retransmitted quickly. So this method can avoid the failure of all paths from handing in packets to upper layer only for the abnormity in one path, which limits the speed of whole association. | 09-09-2010 |
20120283967 | STATE-MATRIX-INDEPENDENT DYNAMIC PROCESS ESTIMATION METHOD IN REAL-TIME FOR WEAKLY OBSERVABLE MEASUREMENT NODES WITHOUT PMU - A state-matrix-independent dynamic process estimation method in real-time for weakly observable measurement nodes without PMU is only dependent on real-time measurement dynamic data of measurement nodes with Phasor Mesurement Unit (PMU) and measurement data of Supervisory Control And Data Acquisition (SCADA) system in electric power system or state estimation data. According to the SCADA measurement data or state estimation data at some continuous moments, the method utilizes recursive least squares solution to find a linear combination relationship between variation of measurement parameter to be estimated of nodes without PMU and variation of corresponding measurement parameter of nodes with PMU. Using the linear combination of relationship, the dynamic process of measurement nodes without PMU is estimated in real-time. The method provides high estimation precision and meets error requirements of engineering application. | 11-08-2012 |
20130013245 | METHOD FOR OBTAINING DISTRIBUTION OF CHARGES ALONG CHANNEL IN MOS TRANSISTOR - The present invention discloses a method for obtaining a distribution of charges along a channel of a MOS transistor, which is used for obtaining distributions of interface states charges and charges of a gate dielectric layer in the MOS transistor. The method includes: adding a MOS transistor into a test circuit; measuring two charge pumping current curves when a source terminal is open-circuited or when a drain terminal is open-circuited before and after a stress is applied by using a charge pumping current test method, where one of the two charge pumping current curves is an original curve and the other one is an post-stress curve; finding a point B corresponding to a point A on the original curve on the post-stress curve, and estimating amount of locally-generated interface states charges and charges of the gate dielectric layer by a variation of the charge pumping current and a variation in a voltage at a local point. As compared with a conventional method for obtaining a distribution, the method of the present invention can obtain a distribution of charges along a direction form the drain or source terminal to the channel more easily and rapidly, with an aid of a computer. A mass of complicated and repeated tests are reduced. Also, the method can provide an effective base for improving device reliability. | 01-10-2013 |
20130103351 | Method for Predicting Reliable Lifetime of SOI Mosfet Device - Disclosed herein is a method for predicting a reliable lifetime of a SOI MOSFET device. The method comprises: measuring a relationship of a gate resistance of the SOI MOSFET device varying as a function of a temperature at different wafer temperatures; performing a lifetime accelerating test on the SOI MOSFET device at different wafer temperatures, so as to obtain a degenerating relationship of a parameter representing the lifetime of the device as a function of stress time, and obtain a lifetime in the presence of self-heating when the parameter degenerates to 10%; performing a self-heating correction on the measured lifetime of the device by using the measured self-heating temperature and an Arrhenius model, so as to obtain a lifetime without self-heating influence; performing a self-heating correction on a variation of the drain current caused by self-heating; performing a self-heating correction on an impact ionization rate caused by hot carriers; and predicting the lifetime of the SOI MOSFET device under a bias. The embodiment of the invention prevents the self-heating effect from affecting the SOI MOSFET device in a practical logic circuit or in an AC analog circuit, which leads to a more precise prediction result. | 04-25-2013 |
20130119445 | CMOS DEVICE FOR REDUCING RADIATION-INDUCED CHARGE COLLECTION AND METHOD FOR FABRICATING THE SAME - A CMOS device for reducing a radiation-induced charge collection and a method for fabricating the same. In the CMOS device, a heavily doped charge collection-suppressed region is disposed directly under the source region and the drain region. The region has a doping type opposite that of the source region and the drain region, and has a doping concentration not less than that of the source region and the drain region. The charge collection-suppressed region has a lateral part slightly less than or equal to that of the source region and the drain region, and has a lateral range toward to the channel not exceed the edges of the source region and the drain region. The CMOS device may greatly reduce a range of the funnel that appears under the action of a single particle, so that charges collected instantaneously under a force of an electric field may be reduced. | 05-16-2013 |
20130142180 | Wireless Communication Method And System With Collision Avoidance Protocol - A method for providing wireless communication between a source node and a destination node in a wireless network wherein the wireless network uses a time division multiple access (TDMA) protocol. One or more dedicated TDMA transaction timeslots are arranged in a superframe. The superframe includes at least one dedicated transaction slot forming a hybrid protocol with two or more shared transaction slots per superframe. The method is of particular advantage when practised with a WirelessHART protocol wireless sensor network and when used for monitoring and control equipment and processes in an industrial installation. A computer program, and a wireless node and a wireless network using the inventive method are also disclosed. | 06-06-2013 |
20130161757 | CMOS Device for Reducing Charge Sharing Effect and Fabrication Method Thereof - The present invention discloses a CMOS device of reducing charge sharing effect and a fabrication method thereof. The present invention has an additional isolation for trapping carriers disposed right below an isolation region. the material of the additional isolation region is porous silicon. Since porous silicon is a functional material of spongy structure by electrochemistry anodic oxidizing monocrystalline silicon wafer, there are a large number of microvoids and dangling bonds on the surface layer of the porous silicon. These defects may form defect states in a center of forbidden band of the porous silicon, the defect states may trap carriers so as to cause an increased resistance. And with an increase of density of corrosion current, porosity increases, and defects in the porous silicon increase. The present invention can reduce the charge sharing effect due to heavy ions by using a feature that the defect states in the porous silicon trap carriers, the formation of a shallow trench isolation (STI) region and a isolation region underneath only needs one time photolithography, and the process is simple, so that radioresistance performance of an integrated circuit may be greatly increased. | 06-27-2013 |
20130235155 | METHOD OF CONVERTING 2D INTO 3D BASED ON IMAGE MOTION INFORMATION - The present invention relates to the field of 2D to 3D conversion, in particular discloses a method of converting 2D into 3D based on image motion information. The method comprises: S1, obtaining a depth value of each pixel of the input 2D image based on a method of motion estimation; S2, accumulating the depth value of each pixel in accordance with a luminance value of each pixel to obtain a depth image of the input 2D image; S3, reconstructing a left eye and/or a right eye image based on a reconstruction of depth image in accordance with the depth image obtained in the step of S2; S4, combining the left eye image and the right eye image obtained in the step of S4 and outputting a combined image to obtain the 3D image. In the method herein, due to the accumulation process of the depth value obtained by the motion estimation, the resulted depth image is continuous and dense, which improves the quality of the reconstructed image and the 3D visual effect. | 09-12-2013 |
20130243099 | METHOD FOR H264 TRANSCODING WITH CODE STREAM INFORMATION REUSE - The present invention discloses a method for H264 transcoding with code stream information reuse, characterized in that, before encoding, a frame or field that is decoded from the original code stream is counted, and the current output of the frame or field is marked with the count value; during encoding, the slice type of the current frame or field that is encoded from an encoder is consistent with that of the original code stream; when encoding the code stream information at macroblock level, the code stream information at macroblock level of the original code stream is reused. The present invention increases the encoding speed and enhances the encoding efficiency without losing too much video quality. | 09-19-2013 |
20140204319 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device and a manufacturing method are provided. The display device includes a blue light backlight source and a liquid crystal display panel, and the liquid crystal display panel comprises a first substrate, a second substrate. The first substrate or the second substrate includes a color filter layer which includes a black matrix pattern and a red pixel pattern and a green pixel pattern. The red pixel pattern and the green pixel pattern are quantum dot material thin film patterns respectively emitting red light and green light under the excitement of blue light. | 07-24-2014 |