Patent application number | Description | Published |
20130161688 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate having a front surface and a back surface and having a p-type impurity layer, a low-concentration n-type impurity layer, and an n-type impurity layer disposed in a backward direction from the front surface thereof, the n-type impurity layer having a high-concentration p-type impurity region therein and the n-type impurity layer and the high-concentration p-type impurity region being exposed to the back surface; and a deep trench formed vertically in the semiconductor substrate to be open to the front surface of the semiconductor substrate and having a bottom surface connected to the high-concentration p-type impurity region. Here, an activation ratio of impurities may be increased and damages to a wafer may be prevented during a thin film process. | 06-27-2013 |
20130161737 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor device and a method of manufacturing the same, capable of removing a shoot-through phenomenon by forming capacitance between an electrode and a lateral surface of a protrusion region of a gate and increasing a gate-source capacitance. The semiconductor device may include: a semiconductor body having a predetermined volume; a source formed on an upper surface of the semiconductor body; a gate formed in a groove of the semiconductor body and having a protrusion region protruded upwardly of the upper surface of the semiconductor body, the groove having a predetermined depth and the protrusion region having a protrusion height altered depending on a level of capacitance to be set; and an electrode electrically connected to the source to form capacitance together with a lateral surface of the protrusion region of the gate. | 06-27-2013 |
20140015003 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region. | 01-16-2014 |
20140061718 | INSULATED GATE BIPOLAR TRANSISTOR - There is provided an insulated gate bipolar transistor, including: an active region including a gate electrode, a first emitter metal layer, a first well region, and one portion of a third well region; a termination region including a second well region supporting diffusion of a depletion layer; and a connection region located between the active region and the termination region and including a second emitter metal layer, a gate metal layer, and the other portion of the third well region, wherein the third well region is formed over the active region and the connection region, and the first emitter metal layer and the second emitter metal layer are formed on the third well region. | 03-06-2014 |
20140117373 | SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers. | 05-01-2014 |
20140117374 | SEMICONDUCTOR DEVICE - Disclosed herein is a semiconductor device including: a base substrate; a first nitride semiconductor layer formed on the base substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer; a cathode electrode formed on one side of the second nitride semiconductor layer; an anode electrode having one end and the other end, one end being recessed at the other side of the second nitride semiconductor layer up to a predetermined depth, and the other end being spaced apart from the cathode electrode and formed to be extended up to an upper portion of the cathode electrode; and an insulating film formed on the second nitride semiconductor layer between the anode electrode and the cathode electrode so as to cover the cathode electrode. | 05-01-2014 |
20140117405 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device including: a first semiconductor region having a first conductivity type; a second semiconductor region having a second conductivity type and formed on one surface of the first semiconductor region; a third semiconductor region having a first conductivity type and formed on one surface of the second semiconductor region; a gate electrode formed in a trench penetrating through the second semiconductor region and the third semiconductor region to reach an interior of the first semiconductor region; and a hole injection unit formed between the gate electrode and the first semiconductor region. | 05-01-2014 |
20140138736 | INSULATED GATE BIPOLAR TRANSISTOR - There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area. | 05-22-2014 |
20140145291 | POWER SEMICONDUCTOR DEVICE - Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer. | 05-29-2014 |
20140159105 | POWER SEMICONDUCTOR DEVICE - Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in the trench, a second conductive type of second electrode region formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, a first conductive type of second electrode region formed to contact a side surface of the second conductive type of second electrode region, and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region. | 06-12-2014 |
20140159106 | POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer. | 06-12-2014 |
20140167150 | POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion. | 06-19-2014 |
20140239344 | POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer. | 08-28-2014 |
20140291722 | POWER SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of the trench gate, and an immunity improving part formed between the trench gates and including a second conductivity-type body layer, a preventing film formed on the surface of the trench gate, and a gate oxide having a thickness less than that the gate oxide of the current increasing part. | 10-02-2014 |
20150060999 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device may include: a drift layer having a first conductivity; a hole accumulating layer formed on the drift layer and having the first conductivity; a well layer formed on the hole accumulating layer and having a second conductivity; an emitter region formed in an internal portion of an upper portion of the well layer and having the first conductivity; and trench gates penetrating through the emitter region, the well layer, and the hole accumulating layer, and having a gate insulating layer formed on a surface thereof. The trench gate may be sequentially divided into a first gate part, a second gate part, and a third gate part from an upper portion thereof depending on a height of a material filled in the trench gate, the first to third gate parts having different resistances from each other. | 03-05-2015 |
20150076652 | POWER SEMICONDUCTOR DEVICE - There is provided a power semiconductor device, including: a first semiconductor layer of a first conductive type having a thickness of t1 so as to withstand a reverse voltage of 600V; and a second semiconductor layer of a second conductive type formed inside an upper portion of the first semiconductor layer and having a thickness of t2, wherein t1/t2 is 15 to 18. | 03-19-2015 |