| Patent application number | Description | Published |
|---|
| 20090078952 | LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY - This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided. | 03-26-2009 |
| 20090127575 | Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 05-21-2009 |
| 20100136728 | LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 06-03-2010 |
| 20100163839 | SEMICONDUCTOR SUBSTRATE FOR GROWTH OF AN EPITAXIAL SEMICONDUCTOR DEVICE - A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer. | 07-01-2010 |
| 20100181576 | Epitaxial Structure Having Low Defect Density - An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface | 07-22-2010 |
| 20100184279 | Method of Making an Epitaxial Structure Having Low Defect Density - A method of making an epitaxial structure includes: (a) forming laterally a first epitaxial layer on a base layer, the first epitaxial layer having an epitaxial surface; (b) etching the first epitaxial layer using a wet etching agent so that the epitaxial surface has a plurality of first recesses; (c) depositing on the first epitaxial layer a defect-termination layer; and (d) removing the defect-termination layer by a chemical mechanical polishing process, thereby forming a plurality of defect-termination blocks that respectively and fill the first recesses, wherein the defect-termination blocks have polished surfaces that are substantially flush with the epitaxial surface. | 07-22-2010 |
| 20110024783 | LIGHT EMITTING DIODE - A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film. | 02-03-2011 |
| 20110037090 | LIGHT EMITTING DIODE - A light emitting diode includes an epitaxial layer, an electroder electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding. | 02-17-2011 |
