Patent application number | Description | Published |
20090078952 | LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY - This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided. | 03-26-2009 |
20090127575 | Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 05-21-2009 |
20100136728 | LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME - This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided. | 06-03-2010 |
20100163839 | SEMICONDUCTOR SUBSTRATE FOR GROWTH OF AN EPITAXIAL SEMICONDUCTOR DEVICE - A semiconductor substrate includes: a base layer; a sacrificial layer that is formed on a base layer and that includes a plurality of spaced apart sacrificial film regions and a plurality of first passages each of which is defined between two adjacent ones of the sacrificial film regions. Each sacrificial film region has a plurality of nanostructures and a plurality of second passages defined among the nanostructures. The second passages communicate spatially with the first passages and have a width less than that of the first passages. An epitaxial layer is disposed on the sacrificial layer. | 07-01-2010 |
20100181576 | Epitaxial Structure Having Low Defect Density - An epitaxial structure having a low defect density includes: a base layer; a first epitaxial layer having a plurality of concentrated defect groups, and an epitaxial surface that has a plurality of first recesses corresponding in position to the concentrated defect groups, the sizes of the first recesses being close to each other; and a plurality of defect-termination blocks respectively and filling the first recesses and having polished surfaces. The defect-termination blocks are made of a material which is different in removal rate from that of the first epitaxial layer. The polished surfaces are substantially flush with the epitaxial surface so that the first epitaxial layer has a substantially planarized crystal growth surface | 07-22-2010 |
20100184279 | Method of Making an Epitaxial Structure Having Low Defect Density - A method of making an epitaxial structure includes: (a) forming laterally a first epitaxial layer on a base layer, the first epitaxial layer having an epitaxial surface; (b) etching the first epitaxial layer using a wet etching agent so that the epitaxial surface has a plurality of first recesses; (c) depositing on the first epitaxial layer a defect-termination layer; and (d) removing the defect-termination layer by a chemical mechanical polishing process, thereby forming a plurality of defect-termination blocks that respectively and fill the first recesses, wherein the defect-termination blocks have polished surfaces that are substantially flush with the epitaxial surface. | 07-22-2010 |
20110024783 | LIGHT EMITTING DIODE - A light emitting diode includes: an electrically conductive permanent substrate having a reflective top surface; an epitaxial film disposed on the reflective top surface of the permanent substrate and having an upper surface and a roughened lower surface that is opposite to the upper surface, the roughened lower surface having a roughness with a height of not less than 300 nm and a plurality of peaks which are in ohmic contact with the reflective top surface; an optical adhesive filled in a gap between the lower surface and the reflective top surface and connecting the epitaxial film to the permanent substrate; and a top electrode disposed on the upper surface and in ohmic contact with the epitaxial film. | 02-03-2011 |
20110037090 | LIGHT EMITTING DIODE - A light emitting diode includes an epitaxial layer, an electroder electrically conductive members, a light incident layer, a light reflecting layer, an adhesive, and an electrically conductive permanent substrate. The epitaxial layer has first and second surfaces. The electrode is disposed on the second surface of the epitaxial layer. The electrically conductive members are formed on the first surface of the epitaxial layer and are spaced apart from each other. The light incident layer is formed on the first surface of the epitaxial layer at regions where none of the electrically conductive members are formed. The light reflecting layer is formed on the light incident layer and the electrically conductive members, and has indented parts and non-indented parts. The adhesive is disposed in the indented parts of the light reflecting layer. The permanent substrate is bonded to the light reflecting layer through the adhesive and through wafer bonding. | 02-17-2011 |
20110227213 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICES AND A SEMICONDUCTOR DEVICE MADE THEREFROM - A method for fabricating semiconductor devices includes: (a) forming over a temporary substrate a sacrificial film layer; (b) growing laterally and epitaxially an epitaxial film layer; (c) forming over the epitaxial film layer a patterned mask that covers partially the epitaxial film layer and that defines a plurality of through holes to expose a plurality of epitaxial surface regions, respectively; (d) forming a plurality of conductive members respectively in the through holes and on the epitaxial surface regions; (e) removing the patterned mask and removing a part of the epitaxial film layer and a part of the sacrificial film layer beneath the patterned mask; (f) removing the sacrificial film layer; and (g) removing the temporary substrate. | 09-22-2011 |
20120074453 | PATTERNED SUBSTRATE AND LIGHT-EMITTING DIODE HAVING THE SAME - A patterned substrate for epitaxially forming a light-emitting diode includes: a top surface; a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and each of which is defined by a recess-defining wall, the recess-defining wall having a bottom wall face, and a surrounding wall face that extends from the bottom wall face to the top surface; and a plurality of protrusions, each of which protrudes upwardly from the bottom wall face of the recess-defining wall of a respective one of the recesses. A light-emitting diode having the patterned substrate is also disclosed. | 03-29-2012 |
20120077334 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICES - A method for fabricating semiconductor devices includes: (a) forming a layered structure that includes a temporary substrate, a plurality of spaced apart sacrificial film regions on the temporary substrate, and a plurality of valley-and-peak areas among the sacrificial film regions; (b) growing laterally and epitaxially an epitaxial film layer over the sacrificial film regions and the valley-and-peak areas, wherein gaps are formed among the epitaxial film layer and the valley-and-peak areas; (c) forming a conductive layer to contact the epitaxial film layer; (d) forming a plurality of grooves to divide the epitaxial film layer and the conductive layer into a plurality of epitaxial structures on the temporary substrate; and (e) removing the temporary substrate and the sacrificial film regions from the epitaxial structures by etching the sacrificial film regions through the gaps and the grooves. | 03-29-2012 |
20120128939 | PATTERNED SUBSTRATE FOR EPITAXIALLY GROWING SEMICONDUCTOR MATERIAL, AND METHOD FOR PATTERNING A SUBSTRATE - A patterned substrate for epitaxially growing a semiconductor material includes: a top surface; and a plurality of spaced apart recesses, each of which is indented downwardly from the top surface and is defined by n crystal planes, n being an integer not less than 3. Each of the crystal planes has an upper edge meeting the top surface and is adapted for epitaxially growing the semiconductor material. A maximum distance from one of the upper edges of one of the recesses to an adjacent one of the upper edges of an adjacent one of the recesses is not greater than 500 nm. | 05-24-2012 |
20120161149 | INTERMEDIATE EPITAXIAL STRUCTURE AND METHOD FOR FABRICATING AN EPITAXIAL STRUCTURE - A method for fabricating an epitaxial structure includes: (a) forming over a temporary substrate a patterned sacrificial layer that partially exposes the temporary substrate; (b) growing laterally and epitaxially a temporary epitaxial film over the patterned sacrificial layer and the temporary substrate; (c) forming over the temporary epitaxial film an etching-stop layer; (d) forming an epitaxial layer unit over the etching-stop layer; (e) removing the patterned sacrificial layer using a first etchant; and (f) removing the temporary epitaxial film using a second etchant. | 06-28-2012 |
20120168914 | EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME - A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer. | 07-05-2012 |