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Dong Seon Uh
Dong Seon Uh, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080305441 | Hardmask composition having antirelective properties and method of patterning material on susbstrate using the same - A hardmask composition includes an organic solvent and one or more aromatic ring-containing polymers represented by Formulae 1, 2 and 3: | 12-11-2008 |
| 20090122239 | Color Filter Ink Composition, Method for Making Color Filter, and Color Filter Produced by the Same - The present invention relates to a color filter ink composition including an acryl-based resin, a polymerizable monomer, a pigment, a leveling agent, and a solvent. The pigment is represented by the following Chemical Formula 1, and the leveling agent is a polymer including a repeating unit including at least one of the following Chemical Formula 2, Chemical Formula 3, or combinations thereof. | 05-14-2009 |
| 20100021830 | Aromatic ring-containing polymer, polymer mixture, antireflective hardmask composition, and associated methods - An aromatic ring-containing polymer, a polymer mixture, an antireflective hardmask composition, and a method for patterning a material on a substrate, the aromatic ring-containing polymer including at least one aromatic ring-containing polymer represented by Formulae 1, 2, or 3. | 01-28-2010 |
| 20100188628 | Photoalignment Agent of Liquid Crystal, Photoalignment Film of Liquid Crystal Including the Same, and Liquid Crystal Display Including the Same - The present invention provides a liquid crystal photoalignment agent that includes a compound selected from the group consisting of a polyamic acid having a predetermined chemical formula, a polyimide polymer having a predetermined chemical formula, and a combination thereof, and a polyimide photopolymer. The liquid crystal photoalignment agent shows a long life-span, stably maintains a pretilt angle, and shows improved after-image characteristics, liquid crystal alignment properties, and chemical resistance. | 07-29-2010 |
| 20110097672 | Polymer having antireflective properties and high carbon content, hardmask composition including the same, and process for forming a patterned material layer - An antireflective hardmask composition includes an organic solvent, an initiator, and at least one polymer represented by Formulae A, B, or C as set forth in the specification. | 04-28-2011 |
Dong Seon Uh, Seoul-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100167553 | Organosilane polymer with improved gap-filling property for semiconductor device and coating composition using the same - A polymer for gap-filling in a semiconductor device, the polymer being prepared by polycondensation of hydrolysates of the compound represented by Formula 1, the compound represented by Formula 2, and one or more compounds represented by Formulae 3 and 4: | 07-01-2010 |
| 20100320573 | ORGANOSILANE POLYMERS, HARDMASK COMPOSITIONS INCLUDING THE SAME AND METHODS OF PRODUCING SEMICONDUCTOR DEVICES USING ORGANOSILANE HARDMASK COMPOSITIONS - Provided herein, according to some embodiments of the invention, are organosilane polymers prepared by reacting organosilane compounds including | 12-23-2010 |
Dong Seon Uh, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100093923 | COMPOUND FOR GAP-FILLING OF SEMICONDUCTOR DEVICE AND COATING COMPOSITION USING THE SAME - A compound for filling small gaps in a semiconductor device and a composition comprising the compound are provided. The composition can completely fill holes having a diameter of 70 nm or less and an aspect ratio (i.e. height/diameter ratio) of 1 or more in a semiconductor substrate without any defects, e.g., air voids, by a general spin coating technique. In addition, the composition can be completely removed from holes at a controllable rate without leaving any residue by the treatment with a hydrofluoric acid solution after being cured by baking. Furthermore, the composition is highly stable during storage. | 04-15-2010 |
Dong Seon Uh, Uiwang KR
| Patent application number | Description | Published |
|---|---|---|
| 20110241175 | HARDMASK COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A hardmask composition for forming a resist underlayer film, a process for producing a semiconductor integrated circuit device, and a semiconductor integrated circuit device, the hardmask composition including an organosilane polymer, and a stabilizer, the stabilizer including one of acetic anhydride, methyl acetoacetate, propionic anhydride, ethyl-2-ethylacetoacetate, butyric anhydride, ethyl-2-ethylacetoacetate, valeric anhydride, 2-methylbutyric anhydride, nonanol, decanol, undecanol, dodecanol, propylene glycol propyl ether, propylene glycol ethyl ether, propylene glycol methyl ether, propylene glycol, phenyltrimethoxysilane, diphenylhexamethoxydisiloxane, diphenylhexaethoxydisiloxane, dioctyltetramethyldisiloxane, hexamethyltrisiloxane, tetramethyldisiloxane, decamethyltetrasiloxane, dodecamethylpentasiloxane, hexamethyldisiloxane, and mixtures thereof. | 10-06-2011 |