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Dong, KR
Cha Deok Dong, Icheon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080280441 | Method of Forming Isolation Layer of Flash Memory Device - An embodiment of the invention relates to a method of forming an isolation layer of a flash memory device. An isolation layer is formed using a PSZ-based material and a nitride film of liner form is deposited on a trench before the PSZ film is deposited. An oxide film can be prevented from remaining on a top of the sidewalls of a conductive film for a floating gate through an etch process employing the etch rate. The thickness of a dielectric film can be prevented from increasing when a dielectric film is deposited. Accordingly, the contact area of the floating gate and the dielectric film can be increased and the coupling ratio between the floating gate and the control gate can be improved. | 11-13-2008 |
| 20090170282 | Method of Forming Isolation Layer in Semiconductor Device - A method of forming isolation layer in a semiconductor device, comprising forming a trench on an isolation region of a semiconductor substrate by etching utilizing an isolation mask; forming a first insulating layer on a lower portion of the trench; forming a second insulating layer on the semiconductor substrate including the first insulating layer; etching the second insulating layer to increase an aspect ratio on the isolation region; and forming a third insulating layer on a peripheral region of the second insulating layer to fill moats formed on the second insulating layer with the third insulating layer. | 07-02-2009 |
| 20090212339 | Flash Memory Device and Method of Fabricating the Same - The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers. | 08-27-2009 |
| 20100025752 | CHARGE TRAP TYPE NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - There is provided a charge trap type non-volatile memory device and a method for fabricating the same, the charge trap type non-volatile memory device including: a tunnel insulation layer formed over a substrate; a charge trap layer formed over the tunnel insulation layer, the charge trap layer including a charge trap polysilicon thin layer and a charge trap nitride-based layer; a charge barrier layer formed over the charge trap layer; a gate electrode formed over the charge barrier layer; and an oxide-based spacer formed over sidewalls of the charge trap layer and provided to isolate the charge trap layer. | 02-04-2010 |
| 20100304549 | METHOD OF FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE - A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. Sidewalls and a bottom surface of each of the first trenches are oxidized by a radical oxidization process to form a first oxide layer. An oxidization-prevention spacer is formed on the sidewalls of each of the first trenches. Second trenches are formed in the isolation region below the corresponding first trenches, wherein each second trench is narrower and deeper than the corresponding first trench. The second trenches are filled with a second oxide layer. The first trenches are filled with an insulating layer. | 12-02-2010 |
| 20110059594 | FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - The present invention relates to flash memory devices and a method of fabricating the same. In an aspect of the present invention, the flash memory device includes trenches formed in a semiconductor substrate and having a step at their lower portion, a tunnel insulating layer formed in an active region of the semiconductor substrate, first conductive layers formed on the tunnel insulating layer, an isolation layer gap-filling between the trenches and the first conductive layers, and a second conductive layer formed on the first conductive layer and having one side partially overlapping with the isolation layers. | 03-10-2011 |
Cha-Deok Dong, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110269304 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching. | 11-03-2011 |
| 20110284942 | SEMICONDUCTOR DEVICE WITH BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an active region having a sidewall, which has a sidewall step, a junction formed under a surface of the sidewall step, and a buried bit line configured to contact the junction. | 11-24-2011 |
Cha-Deok Dong, Ichon-Shi KR
| Patent application number | Description | Published |
|---|---|---|
| 20080277665 | SEMICONDUCTOR DEVICE, NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a conductive layer including a first and a second polysilicon layers having different grain boundaries, wherein a portion or an entire region of the first polysilicon layer is crystallized and wherein a grain boundary in a crystallized region is bigger than the grain boundary of the second polysilicon layer. | 11-13-2008 |
Ki-Young Dong, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20120114910 | FLEXIBLE GAS BARRIER FILM, METHOD FOR PREPARING THE SAME, AND FLEXIBLE DISPLAY DEVICE USING THE SAME - The present invention provides a flexible gas barrier film including: a transparent base film; and a hydrophobic pattern layer formed on the base film. The flexible gas barrier film is capable of maximizing hydrophobicity and effectively reducing water vapor permeability by patterning the hydrophobic layer. | 05-10-2012 |
Mi-Sook Dong, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20080268076 | Composition for Inhibiting Acyl-Coa:Cholesterol Acyltransferase - Disclosed herein is a composition having activity of inhibiting acyl-CoA: cholesterol acyltransf erase, which comprises retrofractamide A, pipercide, piperrolein B, piperchabamide D, pellitorin or combinations thereof, or a pharmaceutically acceptable salt thereof . The composition is effective for preventing and treating vascular diseases, such as hyperlipidemia, arteriosclerosis, etc. | 10-30-2008 |
| 20090118302 | Novel Benzopyran Derivatives Having Inhibitory Activities Against Liver Fibrosis and Cirrhosis and Their Pharmaceutical Uses - The present invention relates to a novel benzopyran derivative having goodantagonistic activity on TGF-β receptor which can be effectively used as a prophylactic and therapeutic agent for liver disease as well as several fibroplasiadiseases such as hepatic fibrosis, liver cirrhosis, pulmonary fibrosis, dermatosclerosis, glomerular fibrosis and the like; and a pharmaceutical use thereof. | 05-07-2009 |
Sang Keun Dong, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20110056487 | FULL TIME REGENERATIVE TYPE SINGLE RADIANT TUBE BURNER - The present invention relates to a full time regenerative type single radiant tube burner. The full time regenerative type single radiant tube burner includes a radiant tube type burner; a regenerating unit that regenerates exhaust gas heat generated from the burner and is used for preheating the intake combustion air; and an intake and exhaust switching device that passes the intake air and the exhaust gas to the regenerating unit and heat-exchanges them and simultaneously progresses the intake and exhaust processes of the burner to perform the full time combustion. | 03-10-2011 |
Seonmin Dong, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090298831 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal. | 12-03-2009 |
| 20090298851 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION COMPRISING THE SAME AND USE THEREOF - The present invention relates to a novel piperazine derivative or pharmaceutically acceptable salt thereof, a process for preparing the same, a pharmaceutical composition for treating central nervous system diseases comprising an effective amount of the piperazine compound and a method of treating central nervous system (CNS) disorder such as psychosis in a mammal. | 12-03-2009 |
| 20110118264 | PHENYL PIPERAZINE COMPOUNDS, PHARMACEUTICAL COMPOSITION INCLUDING THE SAME AND USE THEREOF - The present invention relates to novel piperazine derivatives or pharmaceutically acceptable salts thereof, a process for preparing the same, and in particular, a high binding for Serotonin 1A(5-hydroxytryptamine; 5-HT1A) receptor, a pharmaceutical composition for treatment and/or prevention of depression and anxiety including an effective amount of the piperazine compound, and a method of treating depression, anxiety and other conditions related to 5-HT1A receptor in a mammal | 05-19-2011 |
Sung Woon Dong, Suwon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100027137 | Lens module - A lens module includes a first lens, a second lens, a spacer, a seating part, and a protrusion part. The first lens includes a lens surface and a rib. The second lens is laminated on the first lens. The spacer maintains a predetermined interval between the first lens and the second lens. The seating part is disposed between the lens surface of the first lens and the rib and allows the spacer to be seated on the upper part of the first lens. The protrusion part includes a plurality of protrusions protruded from an undersurface of the spacer, which allow a height of the spacer seated on the seating part to change when the spacer is decentered. | 02-04-2010 |
Wenguo Dong, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090121272 | FABRICATION METHOD OF NANOPARTICLES BY CHEMICAL CURING - Disclosed is a method of producing nanoparticles by using chemical curing. The method includes depositing a metal thin film on a substrate, applying an insulator precursor on a metal thin film, and adding a curing agent and a catalyst to the insulator precursor to perform the chemical curing. The method also includes mixing metal powder and an insulator precursor, applying a mixture on a substrate, and adding a curing agent and a catalyst to the mixture to perform the chemical curing. Since the chemical curing process is used in the method, it is possible to form nanoparticles by using a simple process at low cost while a high temperature process such as thermal curing is not used. | 05-14-2009 |
Won Seok Dong, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080213509 | Composition for LC alignment film using diamine having dendron side chain - Disclosed herein is an LC aligning agent using diamine having dendron side chains. In detail, the present invention relates to a composition for an LC alignment film which employs diamine having dendron side chains to produce polyamic acid, followed by imidization. When the LC alignment film is applied to a liquid crystal display device, high heat resistance, high penetration in a visible ray range, excellent alignment, and a high voltage holding ratio are assured. Even though it contains a small amount of functional diamine, a high pretilt angle can be assured. Thus, the pretilt angle is easily controlled and a vertical aligning force is improved. | 09-04-2008 |
| 20100168374 | Diamine compound having dendron side chain and liquid crystal aligning agent using same - Disclosed herein is a novel functional diamine compound having a dendron structure, polyamic acid which is produced using functional diamine, aromatic cyclic diamine, aliphatic cyclic acid dianhydride, and aromatic cyclic acid dianhydride, polyimide which is produced by imidizing polyamic acid, and an LC alignment film produced using polyimide. Even if the diamine compound is used in a small amount, it is possible to realize a high pretilt angle, thus the pretilt angle is easily controlled. Therefore, it can be used to produce an LC alignment film using a twisted nematic (TN) mode, in which the pretilt angle of liquid crystal is low, and a vertically aligned (VA) mode, which requires a high pretilt angle of about 90°. | 07-01-2010 |
Won Seok Dong, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080213510 | Liquid Crystal Aligning Agent and Liquid Crystal Alignment Layer Formed Using the Same - A liquid crystal aligning agent suitable for use in the production of a liquid crystal display device is provided. The liquid crystal aligning agent comprises at least one polymer selected from a polyamic acid and a soluble polyimide, an aprotic polar solvent and monoethylene glycol dimethyl ether or dipropylene glycol dimethyl ether. The liquid crystal aligning agent has satisfactory printability. Further provided is a liquid crystal alignment layer formed using the aligning agent. The liquid crystal alignment layer is highly uniform. | 09-04-2008 |
Won-Seok Dong, Uiwang-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100136264 | Liquid Crystal Alignment Agent, and Liquid Crystal Alignment Film and Liquid Crystal Display Including Same - Disclosed are a liquid crystal alignment agent, and a liquid crystal alignment film and a liquid crystal display (LCD) including the same. The liquid crystal alignment agent includes a polymer of polyamic acid, a polyimide, or a combination thereof, and an epoxy compound represented by the following Chemical Formula 1. | 06-03-2010 |
| 20120116045 | Liquid Crystal Alignment Agent, Liquid Crystal Alignment Film Manufactured Using the Same, and Liquid Crystal Display Device Including the Liquid Crystal Alignment Film - Disclosed is a liquid crystal alignment agent including a polymer including polyamic acid including a repeating unit represented by Chemical Formula 1, polyimide including a repeating unit represented by Chemical Formula 2, or a combination thereof. | 05-10-2012 |
Won-Seok Dong, Seongnam-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20100151155 | Liquid Crystal Alignment Agent and Liquid Crystal Alignment Film Manufactured Using the Same - The liquid crystal alignment agent according to one embodiment of the present invention includes a soluble polyimide polymer of Formula 1 and a solvent. The soluble polyimide polymer has a number average molecular weight of about 10,000 to 500,000 g/mol, and a polydispersity of about 1.2 to about 1.75. The liquid crystal alignment agent can have good printability on a substrate, and thereby can provide a liquid crystal alignment film that can have excellent film uniformity, even though its predrying temperature is varied. | 06-17-2010 |