| Patent application number | Description | Published |
|---|
| 20090155725 | Method of fine patterning semiconductor device - For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures. | 06-18-2009 |
| 20090176376 | Method of fine patterning semiconductor device - For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses between the buffer layer at sidewalls of the first masking structures. Furthermore, the first and masking structures are formed from spin-coating respective high carbon containing materials. Such first and second masking structures pattern a target layer with higher pitch than possible with traditional photolithography. | 07-09-2009 |
| 20090191713 | METHOD OF FORMING FINE PATTERN USING BLOCK COPOLYMER - Provided is a method of forming a fine pattern using a block copolymer. The method comprises forming a coating layer including a block copolymer having a plurality of repeating units on a substrate. A mold is provided having a first pattern comprising a plurality of ridges and valleys. The first pattern is transferred from the mold into the coating layer. Then, a self-assembly structure is formed comprising a plurality of polymer blocks aligned in a direction guided by the ridges and valleys of the mold thereby rearranging the repeating units of the block copolymer within the coating layer by phase separation while the coating layer is located within the valleys of the mold. A portion of the polymer blocks are removed from among the plurality of polymer blocks and a self-assembly fine pattern of remaining polymer blocks is formed. | 07-30-2009 |
| 20100167214 | Method of forming fine pattern using block copolymer - A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers. | 07-01-2010 |
| 20100248492 | Method of forming patterns of semiconductor device - A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask. | 09-30-2010 |
| 20110081777 | Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern - Methods of forming a pattern and methods of fabricating a semiconductor device having a pattern are provided, the methods include forming a self-assembly induction layer including a first region and a second region on a semiconductor substrate. A block copolymer layer is coated on the self-assembly induction layer. A first pattern, a second pattern and a third pattern are formed by phase separating the block copolymer. At least one of the first, second and third patterns may be removed to form a preliminary pattern. An etching process may be performed using the preliminary pattern as an etching mask. The first pattern contains the same material as that of the second pattern, and the third pattern contains a material different from that of the first pattern. | 04-07-2011 |
| 20110312183 | Method of Fine Patterning Semiconductor Device - For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses between the buffer layer at sidewalls of the first masking structures. Furthermore, the first and masking structures are formed from spin-coating respective high carbon containing materials. Such first and second masking structures pattern a target layer with higher pitch than possible with traditional photolithography. | 12-22-2011 |
| 20120015527 | Method of Fine Patterning Semiconductor Device - For patterning during integrated circuit fabrication, an image layer is activated for forming a respective first type polymer block at each of two nearest activated areas. A layer of block copolymer is formed on the image layer, and a plurality of the first type polymer blocks and a plurality of second and third types of polymer blocks are formed on an area of the image layer between outer edges of the two nearest activated areas, from the block copolymer. At least one of the first, second, and third types of polymer blocks are removed to form a variety of mask structures. | 01-19-2012 |
