| Patent application number | Description | Published |
|---|
| 20090027864 | Printed circuit board and manufacturing method thereof - A printed circuit board and a method of manufacturing the printed circuit board are disclosed. A printed circuit board, which includes an insulation layer, a circuit pattern formed on a surface of the insulation layer that includes at least one pad, and a solder resist which covers the circuit pattern, and in which an opening is formed that exposes a portion of a side and a surface of the pad, can ensure a sufficient amount of attachment area for the pads and the solder resist, to strengthen the adhesion of the pads. Also, the adhesion can be increased between the electronic components and the printed circuit board, and heat release characteristics can be improved. | 01-29-2009 |
| 20110048786 | PRINTED CIRCUIT BOARD HAVING A BUMP AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a printed circuit board having a bump and a method of manufacturing the same. The printed circuit board having a bump includes an insulating layer into which an inner circuit layer is impregnated; a protective layer that is formed under the insulating layer and has an opening exposing a pad unit of the inner circuit layer; and a bump that is integrally formed with the pad unit and is protruded from the inner side of the protective layer to the outside of the protective layer through the opening. The bump is integrally formed with the pad unit, thereby improving bonding strength between the bump and the printed circuit board, and the surface area of the bump is formed to be wide, thereby improving bonding strength between a solder ball and the printed circuit board. | 03-03-2011 |
| 20110056614 | MANUFACTURING METHOD OF CIRCUIT BOARD - A manufacturing method of a circuit board is disclosed. The manufacturing method of a circuit board in accordance with the present invention includes forming a separation layer on a carrier, stacking an adhesion layer which is coupled to the carrier and covers the separation layer, forming a circuit layer on the adhesion layer, forming a circuit board unit by cutting the separation layer, the adhesion layer and the circuit layer such that the separation layer is separated from the carrier, and forming a stiffener by processing the separation layer of the circuit board unit. The manufacturing method of a circuit board in accordance with the present invention can reduce the cost and time for forming the stiffener by forming the stiffener together in the manufacturing process of the circuit board. | 03-10-2011 |
| 20110061922 | PACKAGE SUBSTRATE AND METHOD OF FABRICATING THE SAME - Disclosed is a package substrate, which includes an insulating layer including a circuit layer having a via for connecting layers and an insulating member formed in the insulating layer so as to separate the insulating layer, thus preventing the package substrate from warping and reducing land co-planarity of the substrate. A method of fabricating the package substrate is also provided, including (a) forming a first circuit layer on a carrier, (b) forming an insulating layer on the carrier having the first circuit layer, (c) forming an insulating member in the insulating layer so as to separate the insulating layer, (d) forming a second circuit layer including a via on the insulating layer and the insulating member, and (e) removing the carrier. | 03-17-2011 |
| 20110079349 | Method of manufacturing printed circuit board - The present invention provides a method of manufacturing a printed circuit board including the steps of: preparing a pair of raw materials, each formed by sequentially stacking a release film and a first insulating layer, and an adhesive layer, respectively; embedding the pair of raw materials, which are opposed to each other, in the adhesive layer while disposing the release films toward an inner layer; forming a second insulating layer, which has a via formed therethrough and a circuit pattern formed on an upper surface to be connected to the via, on the first insulating layer; cutting edge portions of the second and first insulating layers, the release film, and the adhesive layer; and removing the release film from the first insulating layer. | 04-07-2011 |
| Patent application number | Description | Published |
|---|
| 20100138048 | Air conditioner and method of controlling the same - The present invention relates to an air conditioner. The air conditioner includes a discharge driving unit for discharging an air-conditioned air, a sensor module for detecting first and second radiation signals for heat sources while the sensor module rotates and performs scan in first and second rotation directions and for outputting a human body detection signal based on the detected first and second radiation signals, and a control unit for calculating position information of human bodies based on the human body detection signal and controlling the discharge driving unit based on the calculated position information. | 06-03-2010 |
| 20100168921 | Air conditioner and method of controlling the same - The present invention relates to an air conditioner, including a discharge driving unit for discharging an air-conditioned air, a sensor module for rotating and scanning predetermined areas and outputting data for radiation heats of heat sources, and a control unit for calculating observed change-amount signals based on the data and stored old data, acquiring human body information by converting each of the observed change-amount signals into energy levels, and controlling the discharge driving unit. | 07-01-2010 |
| 20100168922 | Air conditioner and method of operating the same - The present invention relates to an air conditioner and a method of operating the same. The air conditioner includes a human body detection unit configured to rotatably operate and to detect a person within an indoor area, a position determination unit configured to determine a position of the person using data detected by the human body detection unit and to set a reference area to which a current of air will be provided according to a frequency of detection on the person, and a control unit configured to control the human body detection unit so that the human body detection unit detects the person by a reference frequency or more and to control the current of air based on the determination results by the position determination unit so that the current of air is discharged toward the reference area. | 07-01-2010 |
| 20100168923 | Air conditioner and method of operating the same - The present invention relates to an air conditioner, including a temperature detection unit configured to detect an indoor temperature, a human body detection unit configured to rotatably operate and detect a person within an indoor area, a position determination unit configured to determine a position of the person based on data detected by the human body detection unit, and a control unit configured to perform an automatic operation for controlling a current of air according to the position of the person, determined by the position determination unit, if the indoor temperature reaches a first reference temperature according to an entry of an automatic operation mode and to perform a preparation operation for executing the automatic operation if the indoor temperature does not reach the first reference temperature, in the case where the automatic operation mode has been set. | 07-01-2010 |
| Patent application number | Description | Published |
|---|
| 20080293177 | Method of manufacturing nitride-based semiconductor light emitting diode - Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively. | 11-27-2008 |
| 20100019223 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer of a multi quantum well structure, the nitride semiconductor light emitting device including: a substrate; and a buffer layer, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially stacked on the substrate, wherein the active layer is formed of a multi quantum well structure where a plurality of barrier layers and a plurality of well layers are arranged alternately with each other, and at least one of the plurality of barrier layers includes a first barrier layer including a p-doped barrier layer doped with a p-dopant and an undoped barrier layer. | 01-28-2010 |
| 20100207097 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects. | 08-19-2010 |
| 20100283070 | Nitride semiconductor light emitting device and method of manufacturing the same - There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad. | 11-11-2010 |
| 20110121259 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses. | 05-26-2011 |
| 20110198667 | VAPOR DEPOSITION SYSTEM, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - There are provided a vapor deposition system, a method of manufacturing a light emitting device, and a light emitting device. A vapor deposition system according to an aspect of the invention may include: a first chamber having a first susceptor and at least one gas distributor discharging a gas in a direction parallel to a substrate disposed on the first susceptor; and a second chamber having a second susceptor and at least one second gas distributor arranged above the second susceptor to discharge a gas downwards. | 08-18-2011 |
| 20120104432 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked. | 05-03-2012 |
| Patent application number | Description | Published |
|---|
| 20080260628 | Ni-based catalyst for tri-reforming of methane and its catalysis application for the production of syngas - The present invention relates to a Ni-based catalyst for preparing syngas and a tri-reforming reaction of methane using the catalyst, particularly to a Ni-based catalyst, where an active ingredient (a nickel) is impregnated in a zirconia support and the zirconia is doped with a yttrium and a metal selected among a lanthanum and an alkaline earth metal to distort the crystal lattice of the zirconia, to facilitate the transfer of oxygen ion and to increase the storage and supply of oxygen, thus inhibiting the carbon deposition on the active nickel metal and maintaining the activity of the catalyst. Particularly, if the catalyst herein is used for the tri-reforming reaction of methane where a mixture of carbon dioxide, oxygen and steam is used as an oxidant, the molar ratio of hydrogen and carbon monoxide (H | 10-23-2008 |
| 20080296535 | Structured catalyst for POX reforming of gasoline for fuel-cell powered vehicles applications and a method of preparing the same - The present invention relates to a structured catalyst for reforming of gasoline and a method of preparing the same, more particularly to a structured catalyst for reforming of gasoline for fuel-cell powered vehicles prepared by wash-coating the transition metal based reforming catalyst on the surface of the ceramic honeycomb support wash-coated with sub-micron sized alumina or its precursor to sufficiently increase the effective surface area and the performance of the catalyst and a method of preparing the same. | 12-04-2008 |
| 20090061078 | Solid oxide fuel cell(SOFC) for coproducing syngas and electricity by the internal reforming of carbon dioxide by hydrocarbons and electrochemical membrane reactor system - The present invention relates to a solid oxide fuel cell for internal reforming of hydrocarbons and carbon dioxide, in particular, to a solid oxide fuel cell in which one side of solid oxide electrolyte (YSZ) is attached to an air electrode (La | 03-05-2009 |
| 20090261020 | Nickel Based Catalyst Using Hydrotalcite-Like Precursor and Steam Reforming Reaction of LPG - The present invention relates to a nickel-based catalyst using hydrotalcite-like precursor and a steam reforming reaction by using the catalyst, and particularly to a nickel-based catalyst prepared by dispersing nickel uniformly onto the inner part and the surface of the support through a substitution between the magnesium and the active nickel metal and optimizing the molar ratios of nickel, magnesium and aluminum in order to utilize nickel as an active metal and a hydrotalcite-like precursor consisting of aluminum and magnesium, which shows an increased specific surface area of the catalyst and surface area of the active nickel, and thus enables the production of hydrogen-rich gas in high yield during the steam reforming reaction of LPG with superior maintenance of catalytic activity for a long period of time due to the inhibition of carbon deposition. | 10-22-2009 |
| 20110130474 | GTL-FPSO SYSTEM FOR CONVERSION OF ASSOCIATED GAS IN OIL FIELDS AND STRANDED GAS IN STRANDED GAS FIELDS, AND PROCESS FOR PRODUCTION OF SYNTHETIC FUEL USING THE SAME - Disclosed are a gas to liquids (GTL)-floating production, storage and offloading (FPSO) system that can be used in offshore oil fields or stranded gas fields and a method for producing synthetic fuel using the same. More particularly, the disclosure relates to a GTL-FPSO system capable of producing liquid synthetic fuel from gas extracted from stranded gas fields or associated gas extracted from oil fields, including a reforming reactor and a liquid hydrocarbon producer, and a method for producing the same. | 06-02-2011 |
| 20110274596 | MICRO-MACRO CHANNEL REACTOR - Disclosed is a micro-macro channel reactor comprising: a top end plate and a bottom end plate assembled on the outskirts of the micro-macro channel reactor; a heat exchanging plate by which a heat exchanging material passes through passages thereof so that heat is transferred between the heat exchanging material and such a fluid as a reactant, a product, or a mixture thereof that passes through a catalyst plate; a catalyst plate stacked and assembled together with the heat exchanging plate and including a catalyst section containing a reaction catalyst necessary to perform a catalytic reaction of the reactant while the reactant is passing through the catalyst section; and a support plate stacked and assembled together with the catalyst plate and configured to provide passages that allows the reactant to pass through the catalyst section of the catalyst plate. | 11-10-2011 |
| Patent application number | Description | Published |
|---|
| 20080198519 | ELECTROSTATIC DISCHARGE PROTECTION ELEMENT HAVING AN IMPROVED AREA EFFICIENCY - An electrostatic discharge protection element is disclosed for protecting an internal circuit from electrostatic current. The electrostatic discharge protection element forms an embedded LVTSCR by adding a prescribed impurity region within an N-well region having a P-type diode formed therein. A P-well region having a GGNMOS transistor is also formed in the electrostatic discharge protection element. The embedded LVTSCR improves area efficiency, reduces a resistance, and lowers an operational voltage by reducing the distance between the P-type diode and the LVTSCR to allow high-speed operatation. | 08-21-2008 |
| 20090135535 | ELECTROSTATIC DISCHARGE DEVICE WITH METAL OPTION ENSURING A PIN CAPACITANCE - The present invention discloses an electrostatic discharge device for ensuring a pin capacitance using a metal option. The electrostatic discharge device includes an electrostatic discharging unit formed between a power source voltage line and a ground voltage line to discharge static electricity input from a pad. A MOS capacitor of the electrostatic discharge device has a gate terminal connected to the pad via a metal option. A protection unit is formed between the electrostatic discharging unit and the ground voltage line to protect an internal circuit from static electricity stored in the electrostatic discharging unit. | 05-28-2009 |
| 20090294855 | Electrostatic Discharge Protection Device - An electrostatic discharge protection device includes a first well comprising a MOS transistor; a second well comprising a first impurity region to which a first voltage is applied, and a second impurity region connected to an input/output pad, the second well being disposed adjacent to the first well; and a third well comprising a third impurity region to which the first voltage is applied, the third well being disposed adjacent to the second well. | 12-03-2009 |
| 20100165524 | INTEGRATED CIRCUIT - An integrated circuit includes an input/output pad for signal exchange with an external circuit, an electrostatic discharge (ESD) protection unit coupled to the input/output pad and configured to form an ESD path between a first voltage line and a second voltage line, a first drive transistor coupled between the first voltage line and the input/output pad, a first driving control unit coupled to a gate of the first drive transistor and configured to control the first drive transistor, a first dummy drive transistor coupled between the first voltage line and the input/output pad, and a first auxiliary driving control unit configured to supply the first voltage to a gate of the first dummy drive transistor in a normal operation mode, and float the gate of the first dummy drive transistor in a non-operation mode in which no power is supplied. | 07-01-2010 |
| 20110156147 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - An electrostatic discharge protection device includes first and second wells of a first conductivity type, the first and second wells having different impurity doping concentrations, respectively, a gate formed on the first well, a source region of a second conductivity type formed at one side of the gate in the first well, a drift region of the second conductivity type formed at the other side of gate and over both of the first well and the second well, and a drain region of the second conductivity type formed in the drift region of the second well. | 06-30-2011 |
