| Patent application number | Description | Published |
|---|
| 20100092679 | Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer - Provided are a material layer forming apparatus using a supercritical fluid, a material layer forming system including the apparatus, and a method of forming a material layer using the system. The material layer forming system may include a high pressure pump supplying a supercritical fluid to a precursor storage container and the material layer forming apparatus, and maintaining the internal pressure of the precursor storage container, a reactant material storage container at a pressure such that the supercritical fluid is in a supercritical state, and a material layer forming apparatus. The material layer forming system may further include a pressure gauge adjusting the pressure of the material layer forming apparatus. The precursor of the precursor storage container may be supplied to the material layer forming apparatus using the supercritical fluid. | 04-15-2010 |
| 20100110346 | Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices - Provided are methods of polarizing a transparent conductive oxide (TCO), electronic devices including a polarized TCO, and methods of manufacturing the electronic devices. A transparent conductive oxide formed on a substrate is polarized by electron beam annealing the transparent conductive oxide until a polarization voltage is generated in the transparent conductive oxide. The transparent conductive oxide may be a ZnO film or AlZnO film, where A is a cation. The electron beam annealing may be performed at about room temperature for less than about 60 minutes. | 05-06-2010 |
| 20100144129 | Method of manufacturing crystalline silicon - Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process. | 06-10-2010 |
| 20100147807 | Electron beam annealing apparatuses and annealing methods using the same - Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate. | 06-17-2010 |
| 20100151617 | Method of growing silicon and method of manufacturing solar cell using the same - In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO | 06-17-2010 |
| 20100155826 | Non-volatile memory device and method of fabricating the same - Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes. | 06-24-2010 |
| 20100200908 | Nonvolatile memory device and method of fabricating the same - Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected. | 08-12-2010 |
| 20100255219 | Methods of preparing a graphene sheet - Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet. | 10-07-2010 |
| 20100304043 | Method of manufacturing silicon film by using silicon solution process - Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed. | 12-02-2010 |
| 20100307588 | Solar cell structures - Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material. | 12-09-2010 |
| 20110100448 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 | 05-05-2011 |
