| Patent application number | Description | Published |
|---|
| 20080204071 | On-die termination circuit, method of controlling the same, and ODT synchronous buffer - An on-die termination (ODT) circuit may include an ODT synchronous buffer and/or an ODT gate. The ODT synchronous buffer may be configured to generate a synchronous ODT command from an external ODT command in synchronization with a first clock signal delay-locked to an external clock signal. The ODT gate may be configured to generate signals for controlling ODT based on a second clock signal delay-locked to the external clock signal and the synchronous ODT command. The synchronous ODT command may be generated in a disabled period of the second clock signal. | 08-28-2008 |
| 20080285346 | Decoder, memory system, and physical position converting method thereof - A decoder, a memory system, and a physical position converting method thereof may detect whether an address count of an input address is equal to or greater than a predetermined value. A physical position of a semiconductor memory device corresponding to the input address may be converted if the address count is equal to or greater than the predetermined value. | 11-20-2008 |
| 20080304334 | SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE HAVING ON-DIE TERMINATION CIRCUIT AND ON-DIE TERMINATION METHOD - A synchronous semiconductor memory device having an on-die termination (ODT) circuit, and an ODT method, satisfy ODT DC and AC parameter specifications and perform an adaptive impedance matching through an external or internal control, by executing an ODT operation synchronized to an external clock. The synchronous semiconductor memory device having a data output circuit for performing a data output operation synchronously to the external clock includes the ODT circuit for generating ODT up and down signals having the same timing as data output up and down signals for the data output operation, to perform the ODT operation. | 12-11-2008 |
| 20100268872 | DATA STORAGE SYSTEM COMPRISING MEMORY CONTROLLER AND NONVOLATILE MEMORY - A data storage system comprising a storage device comprising at least one nonvolatile memory, and a controller connected to the storage device through a channel. The memory controller sends part or all of a command, address and data for a next operation to the nonvolatile memory while the nonvolatile memory device is in a busy state. The memory controller then performs a background operation while the nonvolatile memory device remains in the busy state. | 10-21-2010 |
| 20110037504 | DELAY LOCKED LOOP CIRCUIT - A delay locked loop (DLL) circuit has a first delay line that delays a received external clock signal for a fine delay time and then outputs a first internal clock signal; a duty cycle correction unit that corrects a duty cycle of the first internal clock signal and then outputs a second clock signal; a second delay line that delays the second clock signal for a coarse delay time and then outputs a second internal clock signal; and a phase detection and control unit that detects the difference between the phases of the external clock signal and the fed back second internal clock signal, and controls the fine delay time and the coarse delay time. The DLL circuit performs coarse locking and fine locking by using different type delay cells, and thus consumes a small amount of power and robustly withstands jitter and variation in PVT variables. | 02-17-2011 |
| 20110141841 | SYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE HAVING ON-DIE TERMINATION CIRCUIT AND ON-DIE TERMINATION METHOD - A synchronous semiconductor memory device having an on-die termination (ODT) circuit, and an ODT method, satisfy ODT DC and AC parameter specifications and perform an adaptive impedance matching through an external or internal control, by executing an ODT operation synchronized to an external clock. The synchronous semiconductor memory device having a data output circuit for performing a data output operation synchronously to the external clock includes the ODT circuit for generating ODT up and down signals having the same timing as data output up and down signals for the data output operation, to perform the ODT operation. | 06-16-2011 |
