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Dong-Chul

Dong Chul Kim, Seoul KR

Patent application numberDescriptionPublished
20080240285SEQUENCE GENERATING METHOD FOR EFFICIENT DETECTION AND METHOD FOR TRANSMITTING AND RECEIVING SIGNALS USING THE SAME - A sequence generation method for allowing a reception end to effectively detect a sequence used for a specific channel of an OFDM communication system, and a signal transmission/reception method using the same are disclosed. During the sequence generation, an index is selected from among the index set having the conjugate symmetry property between indexes, and a specific part corresponding to the frequency “0” is omitted from a transmitted signal. In addition, a reception end can calculate a cross-correlation value between a received (Rx) signal and each sequence using only one cross-correlation calculation based on the conjugate symmetry property.10-02-2008

Dong Chul Kim, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20090241246SWIMMING GOGGLES HAVING AIR CHANNELS FOR COMFORT WEARING - A swimming goggle has improved to snugly fit around a user's eyes for comfort wearing. An air channel is adopted to remove an ocular pain due to a pressure in an inner space where the user's eyes are placed when the swimming goggles are worn. The swimming goggle comprises a pair of glasses disposed at a predetermined distance in front of the user's eyes, a set of looped cushions surrounding the glasses for directly contacting around the user's eyes, and a vent hole interconnecting an outer surface with an inner surface of the glasses or penetrating the looped cushions.10-01-2009
20100044666RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS - A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.02-25-2010
20100067453METHOD FOR ALLOCATING PILOTS - There is provided a method for allocating pilots to a sub-frame. The sub-frame includes a plurality of blocks in time domain. The method includes allocating a data demodulation (DM) pilot used for demodulating data to two blocks spaced not contiguous with each other, and allocating a channel quality (CQ) pilot. System capacity can be increased, and degradation of performance incurred by a channel estimation error can be minimized.03-18-2010
20110204314RESISTIVE MEMORY CELLS AND DEVICES HAVING ASYMMETRICAL CONTACTS - A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide.08-25-2011

Patent applications by Dong Chul Kim, Gyeonggi-Do KR

Dong Chul Koo, Seongnam KR

Patent application numberDescriptionPublished
20110068379METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A gate pattern is formed on a semiconductor substrate. An interlayer insulating layer is formed on the semiconductor substrate and then etched by using a SEG mask to form a SEG contact formation region. An exposed portion of the semiconductor substrate in the SEG contact formation region is uniformly grown and a source/drain region is formed in a grown portion of the semiconductor substrate through an ion implantation process.03-24-2011
20110193150SEMICONDUCTOR DEVICE INCLUDING RESERVOIR CAPACITOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor memory device includes forming a first capacitor using a metal oxide semiconductor (MOS) transistor, forming a second capacitor being a pillar type corresponding to a cell capacitor formed in a cell region, and forming a third capacitor over the first and the second capacitors08-11-2011

Dong Chul Park, Suwon-Si KR

Patent application numberDescriptionPublished
20110298781CIRCUIT FOR CONTROLLING DATA DRIVER AND DISPLAY DEVICE INCLUDING THE SAME - Circuits for controlling a data driver of a display device are provided. The circuit may include a bias block that may output a first or second bias current or voltage to the data driver and a control unit that may control the bias block to output the first or second bias current or voltage based on a control signal.12-08-2011

Dong Chul Park, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100329477SYSTEM FOR PROVIDING A PERSONALIZED DRIVING SOUND - The present invention relates to a system for providing a personalized driving sound by using an active sound design. The system includes a sound design tool, a memory card, and an audio system. The sound design tool enables a user to create the driving sound. The memory card receives and stores the created driving sound from the sound design tool. The audio system outputs the driving sound stored in the memory card.12-30-2010

Dong Chul Shin, Geojae KR

Patent application numberDescriptionPublished
20110121259NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an active layer having enhanced external quantum efficiency at both low and high current density. The nitride semiconductor light emitting device includes a first conductivity type nitride semiconductor layer; an active layer disposed on the first conductivity type nitride semiconductor layer and having a plurality of quantum well layers and at least one quantum barrier layer alternately arranged; and a second conductivity type nitride semiconductor layer disposed on the active layer. The plurality of quantum well layers disposed adjacent to each other include first and second quantum well layers having different thicknesses.05-26-2011

Dong-Chul Choi, Seoul KR

Patent application numberDescriptionPublished
20090072810Voltage-drop measuring circuit, semiconductor device and system having the same, and associated methods - A voltage-drop measuring circuit is capable of measuring a voltage-drop of a power supply voltage caused by a resistance component of a power line. The voltage-drop measuring circuit includes a sensing circuit and a voltage-drop detecting circuit. The sensing circuit includes a sensor configured to generate a sensing voltage received by the sensor from a power pad through a power line between the sensor and the power pad. The voltage-drop detecting circuit is arranged in a neighborhood of a power pad, and is configured to generate a reference voltage, compare the sensing voltage with the reference voltage to detect the voltage-drop, and generate a detecting signal in accordance with the voltage-drop.03-19-2009
20090251479Display Interface System, Display Device and Display System - A display interface system includes a display transmitter and a display receiver. The display transmitter transmits a control pattern having image type information about a type of an image to be displayed and selectively transmits image data according to the type of the image to be displayed. The display receiver receives the control pattern and selectively receives the image data based upon the image type information, reducing power consumption.10-08-2009

Dong-Chul Han, Gangnam-Gu KR

Patent application numberDescriptionPublished
20090072644THRUST MAGNETIC BEARING SYSTEM - A thrust magnetic bearing system separates magnetic circuits of electromagnets from those of permanent magnets so that each permanent magnet produces a bias magnetic field while each electromagnet functions only to control the position of a rotating body, thereby achieving desired displacement and current stiffness without flowing a bias current through the electromagnet. The magnetic bearing system includes a thrust displacement sensor and a thrust magnetic bearing to float a disk floating body based on displacement information detected through the displacement sensor. The magnetic bearing includes a donut permanent magnet, a pair of electromagnets connected in series to form an inductor at both sides of the donut permanent magnet, and a pair of magnetic poles provided opposite each other outside the pair of electromagnets. The magnetic bearing floats the floating body through a bias magnetic flux generated by the permanent magnet and a control magnetic flux generated by the electromagnets.03-19-2009

Dong-Chul Kang, Dongan-Gu KR

Patent application numberDescriptionPublished
20090203885Astrocyte Modulated Genes And Uses Thereof - The present invention relates to Astrocyte Modulated Genes (AMGs). AMGs are genes whose expression are modulated in human astrocytes grown in primary cell culture following the exposure of these cells to either the human immunodeficiency virus HIV-1 or to the HIV-1 protein gp120. AMGs comprise both Astrocyte Enhanced Genes (AEGs) and Astrocyte Suppressed Genes (ASGs). Thus, the present invention further relates to Astrocyte Enhanced Genes (AEGs), the expression of which are up-regulated in human astrocytes grown in primary cell culture that are exposed to either the human immunodeficiency virus HIV-1 or to the HIV-1 protein gp120, and to Astrocyte Suppressed Genes (ASGs), the expression of which are downregulated in human astrocytes grown in primary cell culture that are exposed to either the human immunodeficiency virus HIV-1 or to the HIV-1 protein gp120. Because they may play a role in HIV-associated dementia (“HAD”), AMGs may be used as markers in methods for screening for drugs that treat or prevent HAD.08-13-2009

Dong-Chul Lee, Seoul KR

Patent application numberDescriptionPublished
20100290765HEATER - Disclosed is a heater capable of supplying heated air to any desired place. The heater includes a heater housing having an air-inflow part and a first air-discharge port, a heating unit disposed in the heater housing to heat air, and a heated-air supply guide connected to the first air-discharge port and guiding heated air discharged through the first air-discharge port 121. The heated-air supply guide has a variable flow channel to change a heated-air supply zone. The heater can perform rapid local heating for a desired place, reduce energy consumption, and improve use convenience.11-18-2010
20110067178HEATING AIR MAT AND AIR MAT HEATING SYSTEM HAVING THE SAME - A heating air mat which supplies heated air into the mat to provide heat to a user, and an air mat heating system including the same are disclosed. The air mat heating system includes a heating air mat having a mat body and a heated air injection part through which the heated air is injected into the mat body, and a heater connected to the heated air injection part of the air mat to supply the heated air into the air mat. The air mat provides heat to the body of a user by supplying heated air into the air mat, thereby eliminating accidents relating to the use of electricity while ensuring good heating efficiency and to reduction of energy consumption when used for local heating and assistant heating.03-24-2011

Dong-Chul Shin, Gyeonggi-Do KR

Patent application numberDescriptionPublished
20100099773INCLUSION COMPLEX OF SIBUTRAMINE AND BETA-CYCLODEXTRIN - The present invention relates to a sibutramine-containing inclusion complex having superior storage stability, and particularly to a pharmaceutically stable inclusion complex suitable for the drug formulation, which prepared by reacting a sibutramine (N,N-dimethyl-1-[1-(4-chlorophenyl)-cyclobutyl]-3-methylbutylamine) of Formula 1 and beta-cyclodextrin in a predetermined ratio, its preparation method and a pharmaceutical composition comprising the same.04-22-2010

Dong-Chul Yoo, Seongham-Si KR

Patent application numberDescriptionPublished
20120115309Methods of Manufacturing a Vertical Type Semiconductor Device - Methods of manufacturing a semiconductor device include forming a stopping layer pattern in a first region of a substrate. A first mold structure is formed in a second region of the substrate that is adjacent the first region. The first mold structure includes first sacrificial patterns and first interlayer patterns stacked alternately. A second mold structure is formed on the first mold structure and the stopping layer pattern. The second mold structure includes second sacrificial patterns and second interlayer patterns stacked alternately. The second mold structure partially covers the stopping layer pattern. A channel pattern is formed and passes through the first mold structure and the second mold structure.05-10-2012