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Dong Bin
Dong Bin Jin, Gyeongbuk KR
| Patent application number | Description | Published |
|---|---|---|
| 20110059127 | USE OF MUTANT HIV-1 PROTEASE OR SIV PROTEASE AS AN ADJUVANT - The present invention relates to a mutant HIV-1 (Human immunodeficiency virus-1) protease capable of effectively enhancing cell-mediated immune responses to DNA vaccination, and use of a nucleic acid encoding the same as a vaccine adjuvant. The mutant HIV-1 protease according to the present invention has inactivated or attenuated proteolytic activity, while retaining chaperone-like activity. When the mutant HIV-1 protease is used together with a DNA vaccine against the HIV-1 envelope protein or the HPV antigen (E6 or E7), cell-mediated immune responses can be effectively enhanced for the prevention or treatment of AIDS or cervical cancer. | 03-10-2011 |
Dong Bin Lim, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080276657 | Drain device and washing machine having the same - Disclosed are a drain device having a drain filter, which causes foreign substances contained in washing water to be effectively filtered out by a filter chamber to prevent the foreign substances from flowing into a pump chamber, and allows the washing water to smoothly flow in the filter chamber to use the drain filter for a long time, and a washing machine having the same. The washing machine includes a housing provided with a washing chamber; and a drain device including a filter chamber provided with a filter member installed therein filtering out foreign substances from washing water in the washing chamber, and a pump chamber connected to the filter chamber to forcibly discharge the washing water. The filter member has a sectional area gradually increased toward the pump chamber and is provided with an end terminal separated from an inlet of the pump chamber by a designated distance. | 11-13-2008 |
Dong Bin Park, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20080211046 | SEMICONDUCTOR DEVICE FOR IMAGE SENSOR - Embodiments relate to a semiconductor device for an image sensor method of fabricating a semiconductor device for an image sensor having a micro lens. According to embodiments, the method may include forming a lower insulating film having cavities on a substrate, forming an upper insulating film having cavities on the lower insulating film, forming a protective insulating film having metal films on the upper insulating film, forming a number of color filters having a specified pattern on the protective insulating film, forming a planarization layer having a specified curvature on the color filters to bury the color filters in the planarization layer, and forming a number of micro lenses on the planarization layer at respective positions corresponding to the color filters. | 09-04-2008 |
| 20090302361 | CMOS Image Sensor and Method for Manufacturing the Same - A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses. | 12-10-2009 |
Dong Bin Park, Jayang-Dong KR
| Patent application number | Description | Published |
|---|---|---|
| 20090090944 | Image Sensor and Method of Fabricating the Same - Provided is an image sensor and a method of fabricating the image sensor. The image sensor can comprise: a semiconductor substrate comprising a photodiode; a metal wiring layer disposed on the semiconductor substrate and comprising a metal wiring and an interlayer dielectric; a trench formed in the interlayer dielectric to correspond to the photodiode; and a color filter formed in the trench. Accordingly, the distance between the photodiode and the color filter can be significantly reduced by forming the color filter in the trench. | 04-09-2009 |
Dong Bin Park, Dong-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20090085079 | Image Sensor and Method for Manufacturing The Same - An image sensor and method of manufacturing the same are disclosed. A semiconductor substrate can be prepared comprising a photodiode region, a transistor region, and a floating diffusion region. A gate dielectric can be disposed under a surface of the semiconductor substrate in the transistor region. A first dielectric pattern can be provided having a portion above and a portion below the surface of the semiconductor substrate in the photodiode and the floating diffusion regions. A second dielectric can be disposed under the gate dielectric. The second dielectric can extend the depth of the gate dielectric into the semiconductor substrate to space the movement path of photoelectrons from the photodiode region to the floating diffusion region. | 04-02-2009 |