Patent application number | Description | Published |
20130241939 | HIGH CAPACITANCE DENSITY METAL-INSULATOR-METAL CAPACITORS - This disclosure provides systems, methods, and apparatus for high capacitance density metal-insulator-metal capacitors. In one aspect, an apparatus may include a first base metal layer on a first side of a substrate. A first polymer layer may be disposed on the first base metal layer and on the first side of the substrate. The first polymer layer may define a first plurality of vias though the first polymer layer, the first plurality of vias exposing portions of the first base metal layer. A first electrode layer may be disposed on the first polymer layer. The first electrode layer may contact the portions of the first base metal layer. A first dielectric layer may be disposed on the first electrode layer. A second electrode layer may be disposed on the first dielectric layer. The first dielectric layer may electrically isolate the first electrode layer from the second electrode layer. | 09-19-2013 |
20130278568 | METAL-INSULATOR-METAL CAPACITORS ON GLASS SUBSTRATES - This disclosure provides systems, methods, and apparatus for metal-insulator-metal capacitors on glass substrates. In one aspect, an apparatus may include a glass substrate, with the glass substrate defining at least one via in the glass substrate. A first electrode layer may be disposed over surfaces of the glass substrate, including surfaces of the at least one via. A dielectric layer may be disposed on the first electrode layer. A second electrode layer may be disposed on the dielectric layer, with the dielectric layer electrically isolating the first electrode layer from the second electrode layer. | 10-24-2013 |
20140035935 | PASSIVES VIA BAR - This disclosure provides systems, methods and apparatus for glass via bars that can be used in compact three-dimensional packages, including embedded wafer level packages. The glass via bars can provide high density electrical interconnections in a package. In some implementations, the glass via bars can include integrated passive components. Methods of fabricating glass via bars are provided. In some implementations, the methods can include patterning and etching photo-patternable glass substrates. Packaging methods employing glass via bars are also provided. | 02-06-2014 |
20140104284 | THROUGH SUBSTRATE VIA INDUCTORS - This disclosure provides systems, methods, and apparatus for through substrate via inductors. In one aspect, a cavity is defined in a glass substrate. At least two metal bars are in the cavity. A first end of each metal bar is proximate a first surface of the substrate, and a second end of each metal bar is proximate a second surface of the substrate. A metal trace connects a first metal bar and a second metal bar. In some instances, one or more dielectric layers can be disposed on surfaces of the substrate. In some instances, the metal bars and the metal trace define an inductor. The inductor can have a degree of flexibility corresponding to a variable inductance. Metal turns can be arranged in a solenoidal or toroidal configuration. The toroidal inductor can have tapered traces and/or thermal ground planes. Transformers and resonator circuitry can be realized. | 04-17-2014 |
20140104288 | THROUGH SUBSTRATE VIA INDUCTORS - This disclosure provides systems, methods, and apparatus for through substrate via inductors. In one aspect, a cavity is defined in a glass substrate. At least two metal bars are in the cavity. A first end of each metal bar is proximate a first surface of the substrate, and a second end of each metal bar is proximate a second surface of the substrate. A metal trace connects a first metal bar and a second metal bar. In some instances, one or more dielectric layers can be disposed on surfaces of the substrate. In some instances, the metal bars and the metal trace define an inductor. The inductor can have a degree of flexibility corresponding to a variable inductance. Metal turns can be arranged in a solenoidal or toroidal configuration. The toroidal inductor can have tapered traces and/or thermal ground planes. Transformers and resonator circuitry can be realized. | 04-17-2014 |
20140144681 | ADHESIVE METAL NITRIDE ON GLASS AND RELATED METHODS - This disclosure provides systems, methods and apparatus for an adhesive metal nitride layer on glass. In one aspect, a glass substrate having a surface is provided. A via with a depth to width aspect ratio of 5 to 1 or greater extends at least partially through the glass substrate. An adhesive metal nitride layer is disposed on the surface of the glass substrate and on one or more interior surfaces of the via. The adhesive metal nitride layer includes at least one of titanium nitride and tantalum nitride. | 05-29-2014 |
20150041189 | METAL-INSULATOR-METAL CAPACITORS ON GLASS SUBSTRATES - This disclosure provides systems, methods, and apparatus for metal-insulator-metal capacitors on glass substrates. In one aspect, an apparatus may include a glass substrate, with the glass substrate defining at least one via in the glass substrate. A first electrode layer may be disposed over surfaces of the glass substrate, including surfaces of the at least one via. A dielectric layer may be disposed on the first electrode layer. A second electrode layer may be disposed on the dielectric layer, with the dielectric layer electrically isolating the first electrode layer from the second electrode layer. | 02-12-2015 |
20150228712 | HIGH QUALITY FACTOR CAPACITORS AND METHODS FOR FABRICATING HIGH QUALITY FACTOR CAPACITORS - Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape. | 08-13-2015 |