| Patent application number | Description | Published |
|---|
| 20090129178 | Integrated Circuit Memory Device Having Delayed Write Timing Based on Read Response Time - An integrated circuit memory device includes a memory core to store write data, a first set of interconnect resources to receive the write data, and a second set of interconnect resources to receive a write command associated with the write data. Information indicating whether mask information is included with the write command, wherein the mask information, when included in the write command, specifies whether to selectively write portions of the write data to the memory core. | 05-21-2009 |
| 20090327789 | Memory System with Calibrated Data Communication - A system includes a first integrated circuit device and a second integrated circuit device. The first device transmits a data sequence to the second integrated circuit device, and the second device samples the data sequence to produce receiver data. The second device then transmits the receiver data back to the first device. Within the first integrated circuit device, a comparison between the data sequence and the receiver data is performed, and based on the comparison, the first device generates information representative of a calibrated timing offset. The first device uses the information representative of the calibrated timing offset to adjust timing associated with transferring write data from the first integrated circuit to the second integrated circuit. | 12-31-2009 |
| 20100046314 | Memory Device Having a Read Pipeline and a Delay Locked Loop - A memory device having a memory core is described. The memory device includes a clock receiver circuit, a control interface, a data interface, a delay locked loop circuit, a read pipeline circuit and a circuit to provide an internal clock signal. The clock receiver circuit receives an external clock signal. The control interface receives a command that specifies a read operation to the memory device. The data interface transfers data between the memory device and an external set of signal lines. The delay locked loop circuit, coupled to the clock receiver circuit, to generate the internal clock signal using the external clock signal. The read pipeline circuit provides read data accessed from the memory core to the data interface. The circuit provides the internal clock signal to the read pipeline circuit in response to receipt of the command that specifies the read operation. | 02-25-2010 |
| 20100332719 | Memory Write Signaling and Methods Thereof - In a method of controlling a memory device, the following is conveyed over a first set of interconnect resources: a first command that specifies activation of a row of memory cells; a second command that specifies a write operation, wherein write data is written to the row; a bit that specifies whether precharging occurs after the write data is written; and a code that specifies whether data mask information will be issued for the write operation. If the code specifies that the information will be issued, then the information, which specifies whether to selectively write portions of the write data, is conveyed over the first set of interconnect resources after conveying the code. The write data to be written in connection with the write operation is conveyed over a second set of interconnect resources that is separate from the first set of interconnect resources. | 12-30-2010 |
| 20110090755 | Memory Device Having Multiple Power Modes - A memory device having a memory core is described. The memory device includes a clock receiver circuit, a first interface to receive a read command, a data interface, and a second interface to receive power mode information. The data interface is separate from the first interface. The second interface is separate from the first interface and the data interface. The memory device has a plurality of power modes, including a first mode in which the clock receiver circuit, first interface, and data interface are turned off; a second mode in which the clock receiver is turned on and the first interface and data interface are turned off; and a third mode in which the clock receiver and first interface are turned on. In the third mode, the data interface is turned on when the first interface receives the command, to output data in response to the command. | 04-21-2011 |
| Patent application number | Description | Published |
|---|
| 20080267000 | SINGLE-CLOCK, STROBELESS SIGNALING SYSTEM - A signaling system includes a signaling path, a master device coupled to the signaling path, a slave device coupled to the signaling path, and a clock generator. The slave device includes timing circuitry to generate an internal clock signal having a phase offset relative to a clock signal supplied by the clock generator, the phase offset being determined at least in part by a signal propagation time on the signal path. | 10-30-2008 |
| 20090213670 | ASYNCHRONOUS, HIGH-BANDWIDTH MEMORY COMPONENT USING CALIBRATED TIMING ELEMENTS - Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device. | 08-27-2009 |
| 20100146321 | SINGLE-CLOCK, STROBELESS SIGNALING SYSTEM - A signaling system includes a signaling path, a master device coupled to the signaling path, a slave device coupled to the signaling path, and a clock generator. The slave device includes timing circuitry to generate an internal clock signal having a phase offset relative to a clock signal supplied by the clock generator, the phase offset being determined at least in part by a signal propagation time on the signal path. | 06-10-2010 |
| 20100223426 | Variable-width memory - Described is a memory system in which the memory core organization changes with device width. The number of physical memory banks accessed reduces with device width, resulting in reduced power usage for relatively narrow memory configurations. Increasing the number of logic memory banks for narrow memory widths reduces the likelihood of bank conflicts, and consequently improves speed performance. | 09-02-2010 |
| 20110055509 | CONTROL COMPONENT FOR CONTROLLING A DELAY INTERVAL WITHIN A MEMORY COMPONENT - Disclosed herein are embodiments of an asynchronous memory device that use internal delay elements to enable memory access pipelining. In one embodiment, the delay elements are responsive to an input load control signal, and are calibrated with reference to periodically received timing pulses. Different numbers of the delay elements are configured to produce different asynchronous delays and to strobe sequential pipeline elements of the memory device. | 03-03-2011 |
