Patent application number | Description | Published |
20110204513 | Device Including an Encapsulated Semiconductor Chip and Manufacturing Method Thereof - A device includes a semiconductor chip having contact pads arranged on a first main face of the semiconductor chip. A first material has an elongation to break of greater than 35% covering the first main face of the semiconductor chip. An encapsulation body covers the semiconductor chip. A metal layer is electrically coupled to the contact pads of the semiconductor chip and extends over the encapsulation body. | 08-25-2011 |
20140239438 | SEMICONDUCTOR DEVICE - A number of semiconductor chips each include a first main face and a second main face opposite to the first main face. A first encapsulation layer is applied over the second main faces of the semiconductor chips. An electrical wiring layer is applied over the first main faces of the first semiconductor chips. A second encapsulation layer is applied over the electrical wiring layer. The thickness of the first encapsulation layer and the thicknesses of the first semiconductor chips is reduced. The structure can be singulated to obtain a plurality of semiconductor devices. | 08-28-2014 |
20140310671 | Electrical Measurement Based Circuit Wiring Layout Modification Method and System - The capacitance or inductance of electrical circuits is adjusted by measuring inductance or capacitance values of passive components fabricated on a first substrate, storing individual associations between the passive components and the respective measured values of the passive components, and determining electrical connections for the passive components based on the stored individual associations between the passive components and the respective measured values of the passive components. A corresponding system includes a tester operable to measure inductance or capacitance values of the passive components fabricated on the first substrate, a storage system operable to store the individual associations between the passive components and the respective measured values of the passive components, and a processing circuit operable to determine the electrical connections for the passive components based on the stored individual associations between the passive components and the respective measured values of the passive components. | 10-16-2014 |
20140332936 | PACKAGE ARRANGEMENT AND METHOD OF FORMING THE SAME - In various embodiments, a package arrangement may be provided. The package arrangement may include at least one chip. The package arrangement may further include encapsulation material at least partially encapsulating the chip. The package arrangement may also include a redistribution structure over a first side of the chip. The package arrangement may further include a metal structure over a second side of the chip. The second side may be opposite the first side. The package arrangement may additionally include at least one of a semiconductor structure and an electrically conductive plastic material structure electrically coupled to the redistribution structure and the metal structure to form a current path between the redistribution structure and the metal structure. | 11-13-2014 |
20150028435 | Method of Packaging Integrated Circuits and a Molded Package - A method of packaging integrated circuits includes providing a molded substrate that has a plurality of first semiconductor dies and a plurality of second semiconductor dies laterally spaced apart from one another and covered by a molding compound. The molding compound is thinned to expose at least some of the second semiconductor dies. The exposed second semiconductor dies are removed to form cavities in the molded substrate. A plurality of third semiconductor dies are inserted in the cavities formed in the molded substrate, and electrical connections are formed to the first semiconductor dies and to the third semiconductor dies. | 01-29-2015 |
20150041967 | Molded Semiconductor Package with Backside Die Metallization - A semiconductor package is manufactured by providing a semiconductor die with a terminal at a first side of the die, providing a material coupled to the die at an opposing second side of the die and embedding the die in a molding compound so that the die is covered by the molding compound on all sides except the first side. The molding compound is thinned at a side of the molding compound adjacent the second side of the die, to expose the material at the second side of the die without exposing the second side of the die. An electrical connection is formed to the terminal at the first side of the die. In the case of a transistor die, the terminal can be a source terminal and the transistor die can be attached source-down to a metal block such as a die paddle of a lead frame. | 02-12-2015 |
20150064846 | Semiconductor Device - A number of semiconductor chips each include a first main face and a second main face opposite to the first main face. A first encapsulation layer is applied over the second main faces of the semiconductor chips. An electrical wiring layer is applied over the first main faces of the first semiconductor chips. A second encapsulation layer is applied over the electrical wiring layer. The thickness of the first encapsulation layer and the thicknesses of the first semiconductor chips is reduced. The structure can be singulated to obtain a plurality of semiconductor devices. | 03-05-2015 |
20150091171 | Metal Redistribution Layer for Molded Substrates - Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. The redistribution layer is formed without first forming a dielectric layer on a side of the molded structure with the terminals of the semiconductor dies. A corresponding molded substrate and individual molded semiconductor packages are also disclosed. | 04-02-2015 |