Patent application number | Description | Published |
20100001785 | SEMICONDUCTOR COMPONENT AND METHOD OF DETERMINING TEMPERATURE - One embodiment provides a circuit arrangement integrated in a semiconductor body. At least one power semiconductor component integrated in the semiconductor body and having a control connection and a load connection is provided. A resistance component is thermally coupled to the power semiconductor component and likewise integrated into the semiconductor body and arranged between the control connection and the load connection of the power semiconductor component. The resistance component has a temperature-dependent resistance characteristic curve. A driving and evaluation unit is designed to evaluate the current through the resistance component or the voltage drop across the resistance component and provides a temperature signal dependent thereon. | 01-07-2010 |
20110102054 | POWER SEMICONDUCTOR MODULE AND METHOD FOR OPERATING A POWER SEMICONDUCTOR MODULE - A power semiconductor module includes a normally on, controllable first power semiconductor switch including at least one first power semiconductor chip, and a normally off, controllable second power semiconductor switch including at least one second power semiconductor chip. The load paths of the first power semiconductor switch and of the second power semiconductor switch are connected in series. The control terminals of all first power semiconductor chips are permanently electrically conductively connected to a conductor track to which no load terminal of any of the first power semiconductor chips is permanently electrically conductively connected, and to which no load terminal and no control terminal of any of the second power semiconductor chips are permanently electrically conductively connected. | 05-05-2011 |
20110216561 | Low-Inductance Power Semiconductor Assembly - A power semiconductor assembly includes at least two bridge branches each including at least two circuit breakers connected to a phase output. Each of the circuit breakers has at least two parallel-connected switching elements integrated into a semiconductor chip. Each of the circuit breakers is arranged in a power semiconductor module and the individual power semiconductor modules are arranged adjacent to one another in a first direction. The semiconductor chips of a particular circuit breaker are arranged adjacent to one another in the corresponding power semiconductor module in a second direction extending perpendicular to the first direction. | 09-08-2011 |
20110254018 | Semiconductor Switching Arrangement Having a Normally on and a Normally off Transistor - A semiconductor switching arrangement includes a normally on semiconductor component of a first conduction type and a normally off semiconductor component of a second conduction type which is the complement of the first conduction type. A load path of the normally off semiconductor component is connected in series with the load path of the normally on semiconductor component. A first actuation circuit connected between the control connection of the normally on semiconductor component and a load path connection of the normally on semiconductor component. The load path connection of the normally on semiconductor component is arranged between the normally on and normally off semiconductor components. A second actuation circuit is connected between the control connection of the normally off semiconductor component and a load path connection of the normally off semiconductor component. The load path connection of the normally off semiconductor component is arranged between the normally on and normally off semiconductor components. | 10-20-2011 |
20120112775 | Detection of the Conduction State of an RC-IGBT - A circuit arrangement includes: a reverse conducting IGBT configured to allow for conducting a load current in a forward direction and in a reverse direction, the IGBT having a load current path and a gate electrode; a gate control unit connected to the gate electrode and configured to activate or deactivate the IGBT by charging or, respectively, discharging the gate electrode in accordance with a gate control signal; a gate driver unit configured to detect whether the IGBT conducts current in the forward direction or the reverse direction by sensing a gate current caused by a change of a voltage drop across the load path due to a changing of the reverse conducting IGBT into its reverse conducting state, the gate control unit further configured to deactivate the IGBT or to prevent an activation of the IGBT via its gate electrode when the gate driver unit detects that the IGBT is in its reverse conducting state. | 05-10-2012 |
20120175780 | SEMICONDUCTOR COMPONENT AND METHOD OF MAKING THE SAME - One embodiment provides a semiconductor chip including a semiconductor body and a power semiconductor component integrated therein. The power semiconductor component includes a load electrode zone arranged on a first surface of the semiconductor body, a control electrode zone arranged on the first surface, the control electrode zone being electrically insulated from the load electrode zone, and a resistance track arranged on the load electrode zone and the control electrode zone. The resistance track ensures an electrical connection between the load electrode zone and the control electrode zone. | 07-12-2012 |
20130043593 | Semiconductor Arrangement - A semiconductor arrangement includes a circuit carrier, a bonding wire and at least N half bridge circuits. N is an integer that amounts to at least 1. The circuit carrier includes a first metallization layer, a second metallization layer, an intermediate metallization layer arranged between the first metallization layer and the second metallization layer, a first insulation layer arranged between the intermediate metallization layer and the second metallization layer, and a second insulation layer arranged between the first metallization layer and the intermediate metallization layer. Each of the half bridge circuits includes a first circuit node, a second circuit node and a third circuit node, a controllable first semiconductor switch and a controllable second semiconductor switch. The controllable first semiconductor switch has a first main contact electrically connected to the first circuit node, a second main contact electrically connected to the third circuit node, and a gate contact for controlling an electric current between the first main contact and the second main contact. Accordingly, the controllable second semiconductor switch has a first main contact electrically connected to the second circuit node, a second main contact electrically connected to the third circuit node, and a gate contact for controlling an electric current between the first main contact and the second main contact. The first semiconductor switch and the second semiconductor switch of each of the half bridge circuits are arranged on that side of the first metallization layer facing away from the second insulation layer. The bonding wire is directly bonded to the intermediate metallization layer at a first bonding location. | 02-21-2013 |
20130082741 | Detection of the Zero Crossing of the Load Current in a Semiconductor Device - A circuit arrangement includes a reverse conducting transistor having a gate electrode and a load current path between an emitter and collector electrode. The transistor is configured to allow for conducting a load current in a forward direction and in a reverse direction through the load current path and activated or deactivated by a respective signal at the gate electrode. The circuit arrangement further includes a gate control unit and a monitoring unit. The gate control unit is connected to the gate electrode and configured to deactivate the transistor or prevent an activation of the transistor via the gate electrode when the transistor is in a reverse conducting state. The monitoring unit is configured to detect a sudden rise of a collector-emitter voltage of the reverse conducting transistor which occurs, when the load current crosses zero, while the transistor is deactivated or activation is prevented by the gate control unit. | 04-04-2013 |
20130161801 | Module Including a Discrete Device Mounted on a DCB Substrate - A module includes a DCB substrate and a discrete device mounted on the DCB substrate, wherein the discrete device comprises a leadframe, a semiconductor chip mounted on the leadframe and an encapsulation material covering the semiconductor chip. | 06-27-2013 |
Patent application number | Description | Published |
20080305341 | Process for Coating Metallic Surfaces With an Anti-Corrosive Coating - A process is disclosed for coating metallic surfaces with an anti-corrosive composition that contains a conductive polymer and is a dispersion that contains the at least one conductive polymer mainly or entirely in particulate form, as well as a binder system. The conductive polymer is at least one polymer based on polyphenylene, polyfuran, polyimidazole, polyphenanthrene, polypyrrole, polythiophene and/or polythiophenylene charged with anti-corrosive mobile anions. Alternatively, the metallic surfaces can be first coated with a dispersion based on conductive polymers in particulate form, then coated with a composition which contains a binder system. | 12-11-2008 |
20100062200 | METHOD FOR COATING METAL SURFACES USING AN AQUEOUS COMPOUND HAVING POLYMERS, THE AQUEOUS COMPOUND, AND USE OF THE COATED SUBSTRATES - A process for coating a metallic surface with an aqueous composition containing a) as the main component, an organic film former consisting of at least one synthetic resin, 70 to 100 wt. % of the content of synthetic resin(s) in the organic film former comprising at least one water-soluble or/and water-dispersible synthetic resin in the form of polymers, copolymers, block copolymers or/and graft copolymers based on synthetic resins selected from the group consisting of polycarbonate, polyurethane, ionomer, poly(meth)acrylate, polyester, polyether or/and polystyrene, the content of polycarbonate and polyurethane being at least 10 wt. % each, at least one long-chain alcohol as film-forming aid for the organic film former, a crosslinker, a lubricant, and a substance based on silane, silanol or/and siloxane or/and at least one inorganic compound in particle form with an average particle diameter measured on a scanning electron microscope in the range from 0.005 to 0.3 μm, and optionally at least one organic corrosion inhibitor, at least one organic solvent or/and at least one additive. The metallic surface is brought into contact with the aqueous composition and a polymeric film is formed on the metallic surface with a film thickness in the range from 0.01 to 10 μm. The aqueous composition and coated products are also contemplated. | 03-11-2010 |
20120171402 | PROCESS FOR THE COATING OF METALLIC COMPONENTS WITH AN AQUEOUS ORGANIC COMPOSITION - A process for the coating of surfaces of a metallic component to be formed by contacting the surfaces of the metallic component prior to forming operation with an aqueous composition containing 80% by weight of at least one organic film-forming ionomeric polymer or copolymer, whereby the total organic polymeric material has an average acid number in the range from 20 to 300, optionally at least one further organic film-forming polymer different from the organic film-forming ionomeric polymer or copolymer; optionally a neutralizing agent; a low temperature corrosion inhibiting cross-linking agent and water. The pH of the aqueous composition at the beginning of the coating process is in the range from 6 to 10.5. | 07-05-2012 |