Patent application number | Description | Published |
20090004806 | NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING - One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, comprising: implanting a first dopant into a first partial completion of the device, the first dopant comprising a first noise reducing species; and implanting a second dopant into a second partial completion of the device, the second dopant and the first dopant being opposite conductivity types. | 01-01-2009 |
20090166681 | MOS Transistor and Semiconductor Device - According to one embodiment of the present invention, a MOS transistor includes a semiconductor layer including a source region, a drain region, and a channel region disposed between the source region and the drain region. A gate structure is arranged above the channel regions. A source wiring structure is arranged above the source region and is connected to the source region. A drain wiring structure is arranged above the drain region and is connected to the drain region. The width of the source wiring structure is larger than the width of the drain wiring structure, and the height of the source wiring structure is smaller than the height of the drain wiring structure, or vice versa. | 07-02-2009 |
20090179695 | APPARATUS AND METHOD HAVING REDUCED FLICKER NOISE - Different techniques for signal processing having reduced flicker noise are described herein. | 07-16-2009 |
20090309162 | SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS - A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths. | 12-17-2009 |
20100099231 | NOISE REDUCTION IN SEMICONDUCTOR DEVICE USING COUNTER-DOPING - One or more embodiments describe a method of fabricating a silicon based metal oxide semiconductor device, including introducing a first dopant into a first partial completion of the device, the first dopant including a first noise reducing species; and introducing a second dopant into a second partial completion of the device, the second dopant and the first dopant being opposite conductivity types. | 04-22-2010 |
20110020997 | NOISE REDUCTION IN SEMICONDUCTOR DEVICES - An integrated circuit and method of making it, includes a semiconductor substrate and a support layer disposed on the semiconductor substrate. A gate insulator including a support layer doped using a noise-reducing dopant can be disposed on the semiconductor substrate. A gate stack can be disposed on the gate insulator. | 01-27-2011 |
20110201186 | METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR DEVICE - Some embodiments discussed relate to an integrated circuit and methods for making it. In an example, a method can include providing a semiconductor wafer including a fin, and introducing a noise-reducing dopant into a sidewall of the fin. | 08-18-2011 |
20120146157 | SEMICONDUCTOR DEVICE HAVING DIFFERENT FIN WIDTHS - A semiconductor device includes at least one source region and at least one drain region. A plurality of fins extend between a source region and a drain region, wherein at least one fin has a different width than another fin. At least one gate is provided to control current flow through such fins. Fin spacing may be varied in addition to, or alternative to utilizing different fin widths. | 06-14-2012 |
20120256274 | Schottky Diodes Having Metal Gate Electrodes And Methods of Formation Thereof - In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first portion of a metal layer is disposed over and contacts the first doped region. A second doped region is disposed in a second region of the substrate. A dielectric layer is disposed on the second doped region. A second metal electrode having a second portion of the metal layer is disposed over the dielectric layer. The second metal electrode is capacitively coupled to the second doped region. | 10-11-2012 |
20130214360 | METHOD AND APPARATUS FOR REDUCING FLICKER NOISE IN A SEMICONDUCTOR DEVICE - Some embodiments discussed relate to an integrated circuit and methods for making it. Certain examples can include a fin, a gate insulator over a sidewall of the fin, and a noise-reducing dopant at or near an interface of the gate insulator and the sidewall. | 08-22-2013 |
20130307091 | Schottky Diodes Having Metal Gate Electrodes and Methods of Formation Thereof - In one embodiment, the semiconductor device includes a first doped region disposed in a first region of a substrate. A first metal electrode having a first portion of a metal layer is disposed over and contacts the first doped region. A second doped region is disposed in a second region of the substrate. A dielectric layer is disposed on the second doped region. A second metal electrode having a second portion of the metal layer is disposed over the dielectric layer. The second metal electrode is capacitively coupled to the second doped region. | 11-21-2013 |