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Dohmae, JP
Hiroshi Dohmae, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20120126776 | VOLTAGE SMOOTHING CIRCUIT - A voltage smoothing circuit is configured to smooth a voltage outputted from a power supply portion. The voltage smoothing circuit includes first and second smoothing capacitors, a first balancing resistor, and a second conduction regulating portion. The first smoothing capacitor and the second smoothing capacitor are connected in series to each other and are connected in parallel to the power supply portion. The first balancing resistor is connected in parallel to the first smoothing capacitor. The second conduction regulating portion is connected on a current path in parallel with the second smoothing capacitor and conducts current in one direction on the current path in a case where a voltage equal to or greater than a second predetermined voltage has been applied. | 05-24-2012 |
Kazuhiko Dohmae, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090104088 | Exhaust Gas Purification System for Internal Combustion Engine - An exhaust gas purification system includes: a catalyst ( | 04-23-2009 |
| 20090266053 | EXHAUST GAS PURIFICATION SYSTEM FOR INTERNAL COMBUSTION ENGINE - An exhaust gas purification system includes: at least two catalysts ( | 10-29-2009 |
| 20100004117 | METAL OXIDE CATALYST CARRIER PARTICLE AND EXHAUST GAS PURIFICATION CATALYST - A metal oxide catalyst carrier particle has a center portion and an outer skin portion each containing a first metal oxide and a second metal oxide. The center portion and the outer skin portion are different in composition. The mole fraction of the metal of the first metal oxide is higher in the center portion than in the outer skin portion and the mole fraction of the metal of the second metal oxide is higher in the outer skin portion than in the center portion. The second metal oxide is selected from the group consisting of rare earth oxides, except for ceria, and alkali earth metal oxides. In addition, platinum is supported on the metal oxide catalyst carrier particle, thus forming an exhaust gas purification catalyst. | 01-07-2010 |
| 20100293921 | APPARATUS AND METHOD FOR REGENERATING CATALYST FOR PURIFYING EXHAUST GAS - A regeneration apparatus comprises a heater | 11-25-2010 |
Kazuhiko Dohmae, Nisshin-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090105070 | Catalyst for Purification of Exhaust Gas - A catalyst for purification of exhaust gas, comprising: | 04-23-2009 |
| 20090170689 | Catalyst for Purification of Exhaust Gas, Regeneration Method for the Catalyst, and Apparatus and Method for Purification of Exhaust Gas Using the Catalyst - A catalyst for purification of exhaust gas in which a noble metal is supported on a metal-oxide support wherein, in a oxidation atmosphere, the noble metal exists on the surface of the support in high oxidation state, and the noble metal binds with a cation of the support via an oxygen atom on the surface of the support to form a surface oxide layer and, in a reduction atmosphere, the noble metal exists on the surface of the support in a metal state, and an amount of noble metal exposed at the surface of the support, measured by CO chemisorption, is 10% or more in atomic ratio to a whole amount of the noble metal supported on the support. | 07-02-2009 |
Naoshi Dohmae, Saitama JP
| Patent application number | Description | Published |
|---|---|---|
| 20090232704 | Multiple-Sample Automatic Processing System and Multiple-Sample Automatic Processing Method - A system completely automates process steps to reduce contamination, enables quantification of products, and reduces the defective ratio. Sample containers are transported on a unit by unit basis, each unit consisting of a predetermined number of containers, and supplied to the individual dispensing/aspiration apparatuses and each reaction bath. In order to ensure quantification and reliability of the reaction/processing of the sample, a reaction monitoring sensor is provided, and the sample containers are affixed with barcodes to identify the samples. Samples determined through monitoring to be defective are returned to a predetermined step site where reaction/processing is performed again. | 09-17-2009 |
| 20100151514 | NOVEL MUCIN-TYPE GLYCOPROTEIN AND USE THEREOF - Provided is a novel mucin-type glycoprotein and a method for producing the same. Specifically, a mucin-type glycoprotein having a repeat structure including 3 to 2000 repeating units each having an amino acid sequence represented by the formula I: Val-Xaa-Glu-Thr-Thr-Ala-Ala-Pro [wherein Xaa represents Val or Ile] (SEQ ID NO: 1), wherein one or more amino acid residues in the structure are bound to a sugar chain of one or more monosaccharides. Also provided is a composition containing the novel mucin-type glycoprotein. Further provided is a molecular weight marker containing the novel mucin-type glycoprotein. | 06-17-2010 |
| 20110071278 | ANTIBODIES THAT RECOGNIZE CUTTING EDGE WITHIN THE TGF- BETA ACTIVATION CONTROLLING REGION - It is an object of the present invention to provide antibodies capable of detecting an active TGF-β generation reaction that is specific to pathogenesis, tissues, or isoforms. The present invention provides antibodies against an LAP fragment (or latent TGF-β) generated as a result of generation of active form of human TGF-β1, human TGF-β2 and human TGF-β3. The antibodies are able to specifically recognize respective cutting edges within protease cleavage sites existing in the region from the amino acid residue glycine at position 51 to the amino acid residue arginine at position 110 of human TGF-β1, and corresponding regions of human TGF-β2 and human TGF-β3. | 03-24-2011 |
Yusuke Dohmae, Yokkaichi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20100227454 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device, includes: forming grooves from a first surface side of a semiconductor wafer; separating plural chip areas into pieces by grinding a second surface of the semiconductor wafer after a protection sheet is attached to the first surface of the semiconductor wafer; attaching a laminated film in which a dicing film and an adhesive film are sequentially laminated on a supporting film composed of a resin film with high modulus of elasticity to the second surface of the semiconductor wafer; and cutting the adhesive film. | 09-09-2010 |