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Doczy, US
Mark Doczy, Beaverton, OR US
| Patent application number | Description | Published |
|---|---|---|
| 20080224235 | Selectively depositing aluminium in a replacement metal gate process - A method for carrying out a replacement metal gate process comprises providing a transistor in a reactor, wherein the transistor includes a gate stack, removing at least a portion of the gate stack to expose a surface of a barrier layer, causing a temperature of the reactor be less than or equal to 150° C., introducing methylpyrrolidine:alane (MPA) proximate to the surface of the barrier layer, and carrying out a CVD process to deposit aluminum metal on the barrier layer using a bottom-up deposition mechanism. | 09-18-2008 |
| 20080242012 | High quality silicon oxynitride transition layer for high-k/metal gate transistors - A method for fabricating a high quality silicon oxynitride layer for a high-k/metal gate transistor comprises depositing a high-k dielectric layer on a substrate, depositing a barrier layer on the high-k dielectric layer, wherein the barrier layer includes at least one of nitrogen or oxygen, depositing a capping layer on the barrier layer, and annealing the substrate at a temperature that causes at least a portion of the nitrogen and/or oxygen in the barrier layer to diffuse to an interface between the high-k dielectric layer and the substrate. The diffused nitrogen or oxygen forms a high-quality silicon oxynitride layer at the interface. The high-k dielectric layer, the barrier layer, and the capping layer may then be etched to form a gate stack for use in a high-k/metal gate transistor. The capping layer may be replaced with a metal gate electrode using a replacement metal gate process. | 10-02-2008 |
| 20090020825 | Forming dual metal complementary metal oxide semiconductor integrated circuits - Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type. | 01-22-2009 |
| 20090149012 | METHOD OF FORMING A NONPLANAR TRANSISTOR WITH SIDEWALL SPACERS - A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode. | 06-11-2009 |
| 20100140717 | TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS - Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film. | 06-10-2010 |
| 20110097858 | Transition metal alloys for use as a gate electrode and devices incorporating these alloys - Embodiments of a transition metal alloy having an n-type or p-type work function that does not significantly shift at elevated temperature. The disclosed transition metal alloys may be used as, or form a part of, the gate electrode in a transistor. Methods of forming a gate electrode using these transition metal alloys are also disclosed. | 04-28-2011 |
Mark Doczy, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20080311762 | Semiconductor device surface roughness reduction - Methods and apparatus relating to surface roughness reduction are described. In one embodiment, a particle beam may be directed onto the surface roughness of a semiconductor device to reduce the roughness. Other embodiments are also disclosed. | 12-18-2008 |
Mark L. Doczy, Meridian, ID US
| Patent application number | Description | Published |
|---|---|---|
| 20090166769 | METHODS FOR FABRICATING PMOS METAL GATE STRUCTURES - Methods of forming a microelectronic structure are described. Those methods may include forming a gate dielectric layer on a substrate, forming a metal gate layer on the gate dielectric layer, and then forming a polysilicon layer on the metal gate layer in situ, wherein the metal gate layer is not exposed to air. | 07-02-2009 |
Paul Doczy, Cypress, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080212278 | Portable computer power system - A portable computer power system comprises a battery an external battery housing providing an airflow path therethrough into an airflow vent of a portable computer. | 09-04-2008 |
| 20090190294 | Flexible Sheet With Sealing Skirt For Keyboard Assembly - A computer comprises an upper housing, a lower housing, and a flexible sheet disposed between the housings. The sheet covers an area of least one of the housings. The sheet comprises an outer skirt that fits within a receiving portion in at least one of the housings thereby forming a seal around an edge of the computer. | 07-30-2009 |
Paul Doczy, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20110260864 | INFORMATION HANDLING SYSTEM STATUS ALERT SYSTEM - An information handling system status alert system includes an information handling system (IHS). The IHS includes a frame, a processor supported by the frame and a memory module communicatively coupled to the processor. The IHS additionally includes an operational display device coupled with the frame such that the operational display device is viewable from a first side of the frame. Furthermore, the IHS includes a status alert display device coupled with the frame such that the status alert display device is viewable from a second side of the frame, wherein the second side of the frame is substantially opposite the first side of the frame. | 10-27-2011 |
| 20110264927 | MOBILE COMPUTING MANAGEMENT AND STORAGE DEVICE - A mobile computing management and storage device configured as a portable information handling system (IHS) storage device includes a frame and a docking station supported by the frame. The docking station includes a plurality of channels configured to receive a plurality of portable IHSs. The channels include a power coupling plug and a communication coupling plug such that the power coupling plug and the communication coupling plug are configured and positioned with respect to the channels to mate with corresponding power and communication couplings of the plurality of portable IHSs when the plurality of IHSs are engaged in the plurality of channels. The device further includes a power supply system supported by the frame and electrically coupled to the power coupling(s). The power supply system is configured to provide staged charging when a plurality of portable IHSs are stored in the docking station. In addition, the device includes a communication switching system supported by the frame and communicatively coupled to the communication coupling(s) such that the communication coupling(s) provide communication signals to the plurality of portable IHSs when stored in the docking station. | 10-27-2011 |
Paul J. Doczy, Cyress, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20090027339 | Computing device pointing stick assembly - A computing device comprising a pointing stick assembly comprising an outer portion and an inner portion, the inner portion comprising a plurality of extensions extending through the outer portion. | 01-29-2009 |
Paul J. Doczy, Austin, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20100157519 | PERIPHERAL DEVICE CARRIER - Peripheral device carrier. At least some of the illustrative embodiments are systems including a screen portion with a display device viewable on one surface, a base portion hinged to the screen portion and having a keyboard, a peripheral device carrier mounted at least partially within an internal volume defined by the base portion, and a peripheral coupled within the carrier. The peripheral device carrier includes a top wall and a bottom wall coupled by two side walls, and the walls define a volume with a quadrilateral cross-section. The walls comprise a metallic material, and the walls are seamless along the quadrilateral cross-section. | 06-24-2010 |
| 20100164959 | RENDERING A VIRTUAL INPUT DEVICE UPON DETECTION OF A FINGER MOVEMENT ACROSS A TOUCH-SENSITIVE DISPLAY - A method comprises a processor detecting a person's finger moving across an unrendered portion of a touch-sensitive display. As a result of detecting the finger moving, the method further comprises the processor causing data to be rendered as a virtual keyboard image on the display. | 07-01-2010 |