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Do-Haing
Do-Haing Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090140132 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING NEUTRALIZED BEAMS INCLUDING APPLYING A VOLTAGE TO A SUBSTRATE SUPPORT - An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate. | 06-04-2009 |
| 20090181531 | METHODS OF MANUFACTURING NON-VOLATILE MEMORY DEVICES HAVING INSULATING LAYERS TREATED USING NEUTRAL BEAM IRRADIATION - Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer. | 07-16-2009 |
Do-Haing Lee, Hwaseong-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110159442 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns. | 06-30-2011 |
Do-Haing Lee, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110162581 | ATOMIC LAYER DEPOSITION APPARATUS USING NEUTRAL BEAM AND METHOD OF DEPOSITING ATOMIC LAYER USING THE SAME - Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus. | 07-07-2011 |