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Dmitriev, US
Gary Dmitriev, Middle Village, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080294723 | Business Process Automation - System and methods are disclosed for generating a document in a collaborative manner. A user may create data elements and activity elements, and associate the appropriate elements with events. Subsequently, when events occur, messages are sent to designated users to focus their attention on performing particular tasks, such as the task of updating data in a data store. A server computer may operate upon one or more of the elements in the data store to provide a message-based database system. Other users, including the lead user, may be assigned responsibilities associated with one or more of the elements in the data store. The various elements stored in the data store may be depicted in a tree format to assist in the visual layout of the numerous processes at work in the system. Using a template, a formatted user-friendly report may be generated that incorporates at least some of the data elements in the system. | 11-27-2008 |
Mikhail Dmitriev, Campbell, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110023060 | Targeted Video Advertising - A computer-implemented method of providing targeted video promotional material includes transmitting a promotional item for display on a video terminal, determining whether the promotional item was skipped, and updating a profile corresponding to the promotional item or a viewer of the promotional item based on whether or not the promotional item was skipped. | 01-27-2011 |
Pavel Dmitriev, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100114858 | HOST-BASED SEED SELECTION ALGORITHM FOR WEB CRAWLERS - A host-based seed selection process considers factors such as quality, importance and potential yield of hosts in a decision to use a document of a host as a seed. A subset of a plurality of hosts is determined, including some but not all of the plurality of the hosts, according to an indication of importance of the hosts, according to an expected yield of new documents for the hosts, and according to preferences for the markets the hosts belong to. At least one seed is generated for each host of the determined subset of hosts, wherein each generated at least one seed includes an indication of a document in the linked database of documents. The generated seeds are provided to be accessible by a database crawler. | 05-06-2010 |
| 20100312774 | Graph-Based Seed Selection Algorithm For Web Crawlers - A method for selecting one or more search seeds for Web crawling operations is provided. In a directed graph with Web pages represented by vertices and links represented by edges, characteristics of vertices connected to potential seed vertices are considered in making a seed selection. | 12-09-2010 |
Vadim Dmitriev, Duvall, WA US
| Patent application number | Description | Published |
|---|---|---|
| 20090288039 | MANAGING INPUTS FROM A PLURALITY OF USER INPUT DEVICE ACTUATORS - A computing device and method for managing inputs from a plurality of user input device actuators are provided. The computing device may include code stored in memory for implementing, via a processor, an actuator input module configured to receive a first actuator input from a first user input device actuator, and a second actuator input from a second user input device actuator. The computing device may further execute code to implement a window selection module configured to select a first selected window to which the first actuator input is sent according to predetermined selection rules, to select a second selected window to which the second actuator input is sent according to the predetermined selection rules, and to send the first actuator input to the first selected window and to send the second actuator input to the second selected window. | 11-19-2009 |
Vladimir Dmitriev, Gaithersberg, MD US
| Patent application number | Description | Published |
|---|---|---|
| 20090050913 | METHOD FOR ACHIEVING LOW DEFECT DENSITY ALGAN SINGLE CRYSTAL BOULES - A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation. In order to achieve high growth rates, preferably a dual growth zone reactor is used in which a first, high temperature zone is used for crystal nucleation and a second, low temperature zone is used for rapid crystal growth. Although the process can be used to grow crystals in which the as-grown material and the seed crystal are of different composition, preferably the two crystalline structures have the same composition, thus yielding improved crystal quality. | 02-26-2009 |
Vladimir Dmitriev, Gaithersburg, MD US
| Patent application number | Description | Published |
|---|---|---|
| 20090286063 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 11-19-2009 |
| 20090286331 | METHOD FOR SIMULATENOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY - HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates. | 11-19-2009 |
Vladimir A. Dmitriev, Gaithersburg, MD US
| Patent application number | Description | Published |
|---|---|---|
| 20080257256 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 10-23-2008 |
| 20090092815 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.). | 04-09-2009 |
| 20090130781 | METHOD FOR SIMULTANEOUSLY PRODUCING MULTIPLE WAFERS DURING A SINGLE EPITAXIAL GROWTH RUN AND SEMICONDUCTOR STRUCTURE GROWN THEREBY - HVPE method for simultaneously fabricating multiple Group III nitride semiconductor structures during a single reactor run. A HVPE reactor includes a reactor tube, a growth zone, a heating element and a plurality of gas blocks. A substrate holder is capable of holding multiple substrates and can be a single or multi-level substrate holder. The gas delivery blocks are independently controllable. Gas flows from the delivery blocks are mixed to provide a substantially uniform gas environment within the growth zone. The substrate holder can be controlled, e.g., rotated and/or tilted, for uniform material growth. Multiple Group III nitride semiconductor structures can be grown on each substrate during a single fabrication run of the HVPE reactor. Growth on different substrates is substantially uniform and can be performed on larger area substrates, such as 3-12″ substrates. | 05-21-2009 |
| 20090148984 | BULK GaN AND AlGaN SINGLE CRYSTALS - Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity. | 06-11-2009 |
| 20110114015 | METHOD AND APPARATUS FOR FABRICATING CRACK-FREE GROUP III NITRIDE SEMICONDUCTOR MATERIALS - Method for producing a III-N (AlN, GaN, Al | 05-19-2011 |