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Dirnecker
Christoph Dirnecker, Eching DE
| Patent application number | Description | Published |
|---|---|---|
| 20100136764 | METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT - A method of manufacturing an integrated circuit comprises depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR), depositing an electrically insulating layer on the resistor layer, removing the electrically insulating layer from outside an electrically active area of the resistor layer corresponding to a target TFR area, and depositing an electrically conductive layer of an electrically conductive material such that the conductive layer overlaps the target TFR area and the conductive layer electrically contacts the resistor layer outside the target TFR area. | 06-03-2010 |
Christoph Dirnecker, Haag DE
| Patent application number | Description | Published |
|---|---|---|
| 20080265368 | Integrated Stacked Capacitor and Method of Fabricating Same - An integrated stacked capacitor comprises a first capacitor film ( | 10-30-2008 |
Christoph Dirnecker, Eching/viecht DE
| Patent application number | Description | Published |
|---|---|---|
| 20080248627 | Method of Manufacturing Integrated Deep and Shallow Trench Isolation Structures - A method of forming an integrated deep and shallow trench isolation structure comprises depositing a hard mask on a film stack having a plurality of layers formed on a substrate such that the hard mask is deposited on a furthermost layer from the substrate, imprinting a first pattern into the hard mask to define an open end of a first trench, imprinting a second pattern into the hard mask to define an open end of a second trench, and etching into the film stack the first trench to a first depth and the second trench to a second depth such that the first trench and the second trench each define a blind aperture in the surface of the film stack. | 10-09-2008 |