Patent application number | Description | Published |
20080247096 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - A magnetic memory including a stack, a first writing wire, and a second writing wire is provided. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane. | 10-09-2008 |
20090034322 | MAGNETIC RANDOM ACCESS MEMORY AND OPERATION METHOD - A magnetic random access memory includes at least a first-direction write current line and multiple second-direction write current line, intersecting with the first-direction write current line in substantial perpendicular and forming several intersecting regions. Multiple magnetic memory cells are respectively located at the intersecting regions for receiving an induced magnetic field in a time sequence. Every at least two adjacent memory cells are in parallel or series connection, to form at least one memory unit. An easy axis of a free layer of each magnetic memory cell is substantially perpendicular to a magnetization of a pinned layer. The easy axis and the first-direction write current line form an including angle of about 45°. A read bit-line circuit connects to a first terminal of the memory unit. A read word-line circuit connects to a second terminal of the memory unit. | 02-05-2009 |
20090039450 | STRUCTURE OF MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE - A structure of magnetic memory cell including a first anti-ferromagnetic layer is provided. A first pinned layer is formed over the first anti-ferromagnetic layer. A tunneling barrier layer is formed over the first pinned layer. A free layer is formed over the tunneling barrier layer. A metal layer is formed over the free layer. A second pinned layer is formed over the metal layer. A second anti-ferromagnetic layer is formed over the second pinned layer. | 02-12-2009 |
20090040663 | MAGNETIC MEMORY - A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane. | 02-12-2009 |
20090316472 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory (MRAM) including multiple memory cells for forming an array is provided. Each memory cell has a magnetic free stack layer and a pinned stack layer. A magnetization of the pinned stack layer is set toward a predetermined direction. The magnetic free stack layer has a magnetic easy axis. Two magnetic easy axes of adjacent two memory cells are substantially perpendicular to each other. | 12-24-2009 |
20100109109 | MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element utilizing spin transfer switching includes a pinned layer, a tunneling barrier layer and a free layer structure. The tunneling barrier layer is disposed on the pinned layer. The free layer structure includes a composite free layer. The composite free layer includes a first free layer, an insert layer and a second free layer. The first free layer is disposed on the tunneling barrier layer and has a first spin polarization factor and a first saturation magnetization. The insert layer is disposed on the first free layer. The second free layer is disposed on the insert layer and has a second spin polarization factor smaller than the first spin polarization factor and a second saturation magnetization smaller than the first saturation magnetization. Magnetization vectors of the first free layer and the second free layer are arranged as parallel-coupled. | 05-06-2010 |
20110001203 | MAGNETIC MEMORY ELEMENT UTILIZING SPIN TRANSFER SWITCHING - A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer. | 01-06-2011 |
20130207209 | TOP-PINNED MAGNETIC TUNNEL JUNCTION DEVICE WITH PERPENDICULAR MAGNETIZATION - A top-pinned magnetic tunnel junction device with perpendicular magnetization, including a bottom electrode, a non-ferromagnetic spacer, a free layer, a tunneling barrier, a synthetic antiferromagnetic reference layer and a top electrode, is provided. The non-ferromagnetic spacer is located on the bottom electrode. The free layer is located on the non-ferromagnetic spacer. The tunnel insulator is located on the free layer. The synthetic antiferromagnetic reference layer is located on the tunneling barrier. The synthetic antiferromagnetic reference layer includes a top reference layer located on the tunneling barrier, a middle reference layer located on the bottom reference layer and a bottom reference layer located on the tunneling barrier. The magnetization of the top reference layer is larger than that of the bottom reference layer. The top electrode is located on the synthetic antiferromagnetic reference layer. | 08-15-2013 |
20130229175 | MAGNETIC FIELD SENSING METHODS AND MEGNETIC FIELD SENSING APPARATUSES USING TUNNELING MAGNETO-RESISTOR DEVICES - Magnetic field sensing method and apparatus of this disclosure uses two tunneling magneto-resistor (TMR) devices. Angles of the free magnetizations of the two TMR devices with respect to a fixed direction are set in a first to fourth period. In the first to fourth period, the two TMR devices act as a TMR sensing unit and a zero-field reference unit by turns, and each of the conductance difference between the sensing unit and the zero field reference unit is also obtained in each of the first to fourth period. Finally, the four conductance differences are summed up. | 09-05-2013 |
20140292312 | 3-AXIS MAGNETIC FIELD SENSOR, METHOD FOR FABRICATING MAGNETIC FIELD SENSING STRUCTURE AND MAGNETIC FIELD SENSING CIRCUIT - A 3-axis magnetic field sensor on a substrate and including, a first tunneling magneto-resistor (TMR) having a first easy-axis for sensing a X-axis magnetic field, a second TMR having a second easy-axis for sensing a Y-axis magnetic field, an out-of-plane magnetic sensor for sensing a Z-axis magnetic field, and a reference unit is provided. The first easy-axis and the second easy-axis are orthogonal and include an angle of 45±5 degrees with a bisection direction, respectively. The out-of-plane magnetic sensor includes a groove or bulge structure having a first incline and a second incline; a third TMR on the first incline having a third easy-axis; a fourth TMR on the second incline having a fourth easy-axis; and a central axis orthogonal to the bisection direction and parallel to the third easy-axis and the fourth easy-axis. The reference unit has a fifth TMR and a fifth easy-axis parallel to the bisection direction. | 10-02-2014 |
Patent application number | Description | Published |
20090010088 | DATA READING CIRCUIT OF TOGGLE MAGNETIC MEMORY - A data reading circuit of a magnetic memory applicable for reading data of a magnetic memory includes a first transistor, a second transistor connected to the first transistor in series, a third transistor, a fourth transistor connected to the third transistor in series, a first transmission gate electrically connected to the first transistor, a second transmission gate electrically connected to the first and third transistors, a comparison circuit having two input ends respectively connected to the first transistor, and a storage capacitor having an end electrically connected to the first transistor and the other end connected to a power end. | 01-08-2009 |
20140111195 | MAGNETIC FIELD SENSOR FOR SENSING EXTERNAL MAGNETIC FIELD - A magnetic field sensor for sensing an external magnetic field is disclosed. The magnetic field sensor includes at least two magnetic tunneling junction (MTJ) elements disposed on an underlying electrode. Each of the MTJ elements is formed by a synthetic antiferromagnetic layer, a barrier layer and a free layer sequentially stacked together. A top electrode is then connected to the free layers. The free layer can be a single free layer, a composite free layer, a synthetic antiferromagnetic free layer or an alloy free layer. When a current is applied to a metal circuit passing over or below the MTJ elements, free magnetic moments generated by the MTJ elements are anti-parallel to each other along a reference axis, and the angles between the magnetic moments created by the MTJ elements and the reference axis are 40 to 50 degrees and 130 to 140 degrees, respectively. | 04-24-2014 |