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Dinesh R.
Dinesh R. Koli, Hartsdale, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20090305616 | GLASS MOLD POLISHING METHOD AND STRUCTURE - A glass mold polishing structure and method. The method includes providing a polishing tool comprising mounting plate, a chuck plate over and mechanically attached to the mounting plate, and a pad structure over and mechanically attached to the chuck plate. A retaining structure is attached the chuck plate. A glass mold comprising a plurality of cavities is placed on the pad structure and within a perimeter formed by the retaining structure. A vacuum device is attached to the chuck plate. The vacuum device is activated such that a vacuum is formed and mechanically attaches the glass mold to the pad structure. The polishing tool comprising the glass mold mechanically attached to the pad structure is placed over and in contact with the polishing pad. The polishing tool comprising the glass mold is rotated. The glass mold is polished as a result of the rotation. | 12-10-2009 |
Dinesh R. Koli, Tarrytown, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120009771 | Implantless Dopant Segregation for Silicide Contacts - A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer. | 01-12-2012 |
Dinesh R. Pejaver, Sugar Land, TX US
| Patent application number | Description | Published |
|---|---|---|
| 20080210432 | System and Vessel for Supporting Offshore Fields - A system for supporting multiple-well-site, offshore, hydrocarbon-bearing fields, each well-site has one or more wells. In general, the system first comprises a floating vessel that is relocatable from a first subsea well-site to a second subsea well-site. The system also comprises two separate systems: (1) an operations control system for providing subsea well-site operations such as power and communications; and (2) an intervention system for conducting intervention services to an individual subsea well such as workover services and maintenance services. The operations system may provide control to wells and other subsea equipment at either the first well-site or the second well-site, regardless of the location of the floating vessel. The intervention system may provide workover and/or maintenance to subsea equipment or individual wells at the well-site at which it is located. | 09-04-2008 |
Dinesh R. Rakwal, Richfield, MN US
| Patent application number | Description | Published |
|---|---|---|
| 20100199909 | SYSTEMS AND METHODS FOR RECYCLING SEMICONDUCTOR MATERIAL REMOVED FROM A RAW SEMICONDUCTOR BOULE - Methods of recycling excess semiconductor material removed from an unshaped semiconductor boule are disclosed. Excess semiconductor material is cut from an semiconductor unshaped boule thereby generating a shaped semiconductor boule. The excess semiconductor material is removed in the form of large pieces that can easily be cleaned and retrieved for reuse. | 08-12-2010 |
Dinesh R. Rakwal, Salt Lake City, UT US
| Patent application number | Description | Published |
|---|---|---|
| 20100187203 | MULTI-WIRE ELECTRON DISCHARGE MACHINE - A multi-wire electron discharge machine includes a first wire electrode for creating an electrical discharge between the first electrode wire and a semiconductor ingot, a second wire electrode for creating an electrical discharge between the second electrode wire and the semiconductor ingot, and a wire guide for maintaining the first wire electrode in a spaced apart and generally parallel orientation with respect to the second wire electrode across a semiconductor ingot slicing area. | 07-29-2010 |