Dinesh R.
Dinesh R. Koli, Hartsdale, NY US
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20090305616 | GLASS MOLD POLISHING METHOD AND STRUCTURE - A glass mold polishing structure and method. The method includes providing a polishing tool comprising mounting plate, a chuck plate over and mechanically attached to the mounting plate, and a pad structure over and mechanically attached to the chuck plate. A retaining structure is attached the chuck plate. A glass mold comprising a plurality of cavities is placed on the pad structure and within a perimeter formed by the retaining structure. A vacuum device is attached to the chuck plate. The vacuum device is activated such that a vacuum is formed and mechanically attaches the glass mold to the pad structure. The polishing tool comprising the glass mold mechanically attached to the pad structure is placed over and in contact with the polishing pad. The polishing tool comprising the glass mold is rotated. The glass mold is polished as a result of the rotation. | 12-10-2009 |
Dinesh R. Koli, Tarrytown, NY US
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20120009771 | Implantless Dopant Segregation for Silicide Contacts - A method for formation of a segregated interfacial dopant layer at a junction between a semiconductor material and a silicide layer includes depositing a doped metal layer over the semiconductor material; annealing the doped metal layer and the semiconductor material, wherein the anneal causes a portion of the doped metal layer and a portion of the semiconductor material to react to form the silicide layer on the semiconductor material, and wherein the anneal further causes the segregated interfacial dopant layer to form between the semiconductor material and the silicide layer, the segregated interfacial dopant layer comprising dopants from the doped metal layer; and removing an unreacted portion of the doped metal layer from the silicide layer. | 01-12-2012 |
20120083121 | Fabrication of Replacement Metal Gate Devices - Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor. | 04-05-2012 |
20120083122 | Shallow Trench Isolation Chemical Mechanical Planarization - A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface. | 04-05-2012 |
20120083123 | Chemical Mechanical Planarization Processes For Fabrication of FINFET Devices - A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography. | 04-05-2012 |
20120083125 | Chemical Mechanical Planarization With Overburden Mask - Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer. | 04-05-2012 |
Dinesh R. Pejaver, Sugar Land, TX US
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20080210432 | System and Vessel for Supporting Offshore Fields - A system for supporting multiple-well-site, offshore, hydrocarbon-bearing fields, each well-site has one or more wells. In general, the system first comprises a floating vessel that is relocatable from a first subsea well-site to a second subsea well-site. The system also comprises two separate systems: (1) an operations control system for providing subsea well-site operations such as power and communications; and (2) an intervention system for conducting intervention services to an individual subsea well such as workover services and maintenance services. The operations system may provide control to wells and other subsea equipment at either the first well-site or the second well-site, regardless of the location of the floating vessel. The intervention system may provide workover and/or maintenance to subsea equipment or individual wells at the well-site at which it is located. | 09-04-2008 |
Dinesh R. Rakwal, Richfield, MN US
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20100199909 | SYSTEMS AND METHODS FOR RECYCLING SEMICONDUCTOR MATERIAL REMOVED FROM A RAW SEMICONDUCTOR BOULE - Methods of recycling excess semiconductor material removed from an unshaped semiconductor boule are disclosed. Excess semiconductor material is cut from an semiconductor unshaped boule thereby generating a shaped semiconductor boule. The excess semiconductor material is removed in the form of large pieces that can easily be cleaned and retrieved for reuse. | 08-12-2010 |
Dinesh R. Rakwal, Salt Lake City, UT US
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20100187203 | MULTI-WIRE ELECTRON DISCHARGE MACHINE - A multi-wire electron discharge machine includes a first wire electrode for creating an electrical discharge between the first electrode wire and a semiconductor ingot, a second wire electrode for creating an electrical discharge between the second electrode wire and the semiconductor ingot, and a wire guide for maintaining the first wire electrode in a spaced apart and generally parallel orientation with respect to the second wire electrode across a semiconductor ingot slicing area. | 07-29-2010 |
Dinesh R. Rakwal, Bangalore IN
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20140360886 | METHOD FOR MANUFACTURING FLUID HANDLING DISCS WITH POROUS MESH PLATES FOR USE IN ULTRASONIC MESH NEBULIZERS - The present disclosure relates to methods for manufacturing porous mesh plates for use in ultrasonic mesh nebulizers, and the porous mesh plates manufactured by those methods. Cone-shaped dimples are first drilled in a substrate (e.g. a plate), but do not penetrate the bottom of the substrate. Next, the substrate (e.g. a plate) is subject to an electrochemical process to remove a layer of material from the surface of the substrate. Enough material is removed to allow the dimples to penetrate the substrate, thereby creating holes in the substrate. The size of the holes can be controlled by the conditions of the electrochemical process. | 12-11-2014 |