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Dimitrakopoulos
Aristotelis Dimitrakopoulos, Saint Martin De Nigelles FR
| Patent application number | Description | Published |
|---|---|---|
| 20080258742 | Conductivity measurement device, its manufacture and use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 10-23-2008 |
| 20090315571 | Method and device for measuring the conductivity of a pure or ultrapure liquid - The invention relates to a method of measuring the conductivity of a pure or ultrapure liquid, notably water, using electrodes, characterized in that it consists in determining the conductivity by modeling the liquid in the form of an equivalent electrical circuit diagram comprising a resistor R, a capacitor Cp in parallel with the resistor R, and a series capacitor Cs. | 12-24-2009 |
| 20090319194 | Device for measuring the purity of ultrapure water - This is a device for analyzing the quantity of organic compounds existing in a liquid, such as ultrapure water, at the outlet from a purification device including in series filter means ( | 12-24-2009 |
| 20100072079 | Electrochemical method for detecting boron in water - The invention relates to a method for detecting the presence of boron in water comprising the production of a conductive buffer solution comprising water and at least one boron complexing agent, the introduction into an electrochemical cell of said solution in the presence of at least one work electrode ( | 03-25-2010 |
| 20100193377 | Electrochemical Detection of Silica Species - A systems and apparatus for measuring non-electroactive materials in liquids using electrochemical detection. A first electrical activity of a electroactive material is detected in absence of a target non-electroactive material (Step | 08-05-2010 |
| 20110068812 | Method And Device For Measuring The Purity Of Ultrapure Water - This is a method for analyzing the purity of water at the outlet from a purification device. It comprises the following steps: a) sending the liquid at the outlet from the filter means ( | 03-24-2011 |
| 20120061346 | Conductivity Measurement Device, Its Manufacture And Use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 03-15-2012 |
| 20120062243 | Conductivity Measurement Device, Its Manufacture And Use - The invention relates to a method of manufacturing a device for measuring conductivity of a liquid, in particular ultrapure water, of the kind comprising two conductivity measurement electrodes suitable for defining a cell constant enabling the measurement of the conductivity of the ultrapure liquid, characterized in that it consists of producing each of the electrodes by forming an electrode pattern from electrically conductive material on a substrate of insulating material. | 03-15-2012 |
Aristotelis Dimitrakopoulos, Windsor GB
| Patent application number | Description | Published |
|---|---|---|
| 20110284395 | Simultaneous Electrochemical Detection of Multiple Heavy Metal Ions in Liquid - Among others, techniques and systems are disclosed for detecting trace levels of heavy metal ions in a sample liquid. A voltage is applied to a sample liquid that includes metal complexes. A current signal associated with the metal complexes is measured. The measured current signal is processed to simultaneously detect a presence of two or more metal ions associated with the metal complexes. | 11-24-2011 |
Christos Dimitrakopoulos, Baldwin Place, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120028052 | GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE - A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry. | 02-02-2012 |
Christos Dimitrios Dimitrakopoulos, Baldwin Place, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080316711 | VLSI HOT-SPOT MINIMIZATION USING NANOTUBES - The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes. | 12-25-2008 |
| 20090102046 | ON-CHIP TEMPERATURE GRADIENT MINIMIZATION USING CARBON NANOTUBE COOLING STRUCTURES WITH VARIABLE COOLING CAPACITY - An electronic device comprises a die with at least one defined hot-spot area; and at least one defined intermediate temperature area at a temperature lower than the temperature of the hot-spot area. The device also comprises a cooling structure comprising at least one bundle of first nanotubes for cooling the hot spot area and at least one bundle of additional nanotubes for cooling the intermediate temperature area, and having heat conductivity lower than the bundle of first nanotubes. The heat conductivity of both sets of the nanotubes is sufficient to decrease any temperature gradient between the defined hot spot area, the defined intermediate temperature area, and at least one lower temperature area on the die. The walls of the first nanotubes and the additional nanotubes are surrounded by a heat conducting matrix material operatively associated with the lower temperature area. | 04-23-2009 |
| 20100328899 | VLSI HOT-SPOT MINIMIZATION USING NANOTUBES - The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes. | 12-30-2010 |
Christos Dimitrios Dimitrakopoulos, Somers, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
| 20090304951 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than | 12-10-2009 |
James Dimitrakopoulos, Peabody, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20120129062 | INTEGRAL REACTOR SYSTEM AND METHOD FOR FUEL CELLS - A reactor system is integrated internally within an anode-side cavity of a fuel cell. The reactor system is configured to convert higher hydrocarbons to smaller species while mitigating the lower production of solid carbon. The reactor system may incorporate one or more of a pre-reforming section, an anode exhaust gas recirculation device, and a reforming section. | 05-24-2012 |