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Dikshit
Abhinav Kumar Dikshit, Varanasi IN
| Patent application number | Description | Published |
|---|---|---|
| 20110254599 | Method and Apparatus for MEMS Phase Locked Loop - The proper operation of a phase locked loop is determined by monitoring certain signals within the loop for their phase relationship or duty cycle. If a malfunction of the loop is detected, proper operation may be imposed or restored by resetting a phase-frequency detector, or by flipping the output of the phase-frequency detector. | 10-20-2011 |
Jyoti Bajpai Dikshit, Bangalore IN
| Patent application number | Description | Published |
|---|---|---|
| 20100179798 | Method for Predicting Organ Toxicity and a System Thereof - The attached disclosure provides a systems approach based on mathematical modelling of the kinetics of essential biochemical pathways involved in organ homeostasis. When this in silico model is coupled with in-vitro and/or in-vivo measurements to quantify drug-induced perturbations, a powerful platform that allows accurate and mechanistic-level prediction of drug-induced organ injury can be generated. The method described in this disclosure demonstrates that several physiological situations can also be accurately modelled in addition to the effect of perturbations induced by drugs. It can also be used along with high-throughput “omics” data to generate testable hypotheses leading to informed decision-making in drug development. | 07-15-2010 |
Kanak Lata Dikshit, Chandigarh IN
| Patent application number | Description | Published |
|---|---|---|
| 20100221236 | Mutants of Staphylokinase Carrying Amino and Carboxy-Terminal Extensions for Polyethylene Glycol Conjugation - The present invention relates to the development of new derivatives of a bacterial plasminogen activator, Staphylokinase (SAK), having one or more amino acid residues with single or multiple cysteines at the amino and/or carboxy terminal ends and their conjugation with PEG (Polyethylene Glycol), resulting in new Staphylokinase derivatives that display altered oligomeric states, enhanced thermal and protease stability and extended plasma half-life. Also included is the cloning and expression in a suitable bacterial host; purification of Staphylokinase derivatives to homogeneity and their chemical modification by integrating a PEG molecule to create new biologically active Staphylokinases having higher protein stability and improved in vivo plasma half life, that may enhance the clinical potential of Staphylokinase in thrombolytic therapy for the treatment of cardiovascular diseases. | 09-02-2010 |
Rohit Dikshit, Herriman, UT US
| Patent application number | Description | Published |
|---|---|---|
| 20100123225 | Semiconductor Die Structures for Wafer-Level Chipscale Packaging of Power Devices, Packages and Systems for Using the Same, and Methods of Making the Same - Disclosed are semiconductor die structures that enable a die having a vertical power device to be packaged in a wafer-level chip scale package where the current-conducting terminals are present at one surface of the die, and where the device has very low on-state resistance. In an exemplary embodiment, a trench and an aperture are formed in a backside of a die, with the aperture contacting a conductive region at the top surface of the die. A conductive layer and/or a conductive body may be disposed on the trench and aperture to electrically couple the backside current-conducting electrode of the device to the conductive region. Also disclosed are packages and systems using a die with a die structure according to the invention, and methods of making dice with a die structure according to the invention. | 05-20-2010 |
| 20110062564 | SEMICONDUCTOR DIE CONTAINING LATERAL EDGE SHAPES AND TEXTURES - Methods for singulating a semiconductor wafer into a plurality of individual dies that contain lateral edges or sidewalls and the semiconductor dies formed from these methods are described. The dies are formed from methods that use a front to back photolithography alignment process to form a photo-resist mask and an anisoptropic wet etch in an HNA and/or a TMAH solution on the backside of the wafer through the photoresist mask to form sloped sidewalls and/or textures. The conditions of the TMAH etching process can be controlled to form any desired combination of rough or smooth sidewalls. Thus, the dies formed have a Si front side with an area larger than the Si backside area and sidewalls or lateral edges that are not perpendicular to the front or back surface of the die. Other embodiments are also described. | 03-17-2011 |