| Patent application number | Description | Published |
|---|
| 20090231707 | OPTICAL ARRANGEMENT, IN PARTICULAR PROJECTION EXPOSURE APPARATUS FOR EUV LITHOGRAPHY, AS WELL AS REFLECTIVE OPTICAL ELEMENT WITH REDUCED CONTAMINATION - An optical arrangement, in particular a projection exposure apparatus ( | 09-17-2009 |
| 20100034349 | METHOD FOR CLEANING AN EUV LITHOGRAPHY DEVICE, METHOD FOR MEASURING THE RESIDUAL GAS ATMOSPHERE AND THE CONTAMINATION AND EUV LITHOGRAPHY DEVICE - Components ( | 02-11-2010 |
| 20100045948 | EUV LITHOGRAPHY APPARATUS AND METHOD FOR DETERMINING THE CONTAMINATION STATUS OF AN EUV-REFLECTIVE OPTICAL SURFACE - The invention relates to an EUV lithography apparatus with at least one EUV-reflective optical surface and a cavity ringdown reflectometer adapted to determine the contamination status of the EUV-reflective optical surface for at least one contaminating substance by determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm). The invention further relates to a method for determining the contamination status of at least one EUV-reflective optical surface arranged in an EUV lithography apparatus for at least one contaminating substance comprising determining the reflectivity of the EUV-reflective optical surface for radiation at a measuring wavelength (λm) using a cavity ringdown reflectometer. | 02-25-2010 |
| 20100071720 | METHOD AND SYSTEM FOR REMOVING CONTAMINANTS FROM A SURFACE - Inside a vacuum chamber | 03-25-2010 |
| 20100112494 | APPARATUS AND METHOD FOR MEASURING THE OUTGASSING AND EUV LITHOGRAPHY APPARATUS - An apparatus and method for measuring an outgassing in a EUV lithography apparatus. The method includes activating a surface within the EUV lithography apparatus, inducing the outgassing, analyzing a residual gas. Defining a maximum partial pressure, recording a mass spectrum of the residual gas, converting the highest-intensity peaks of the mass spectrum into sub-partial pressures, summing the sub-partial pressures, and comparing the summed result with the defined maximum partial pressure. An EUV lithography apparatus includes a residual gas analyzer and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. A measurement setup for measuring the outgassing from components by analyzing the residual gas includes a residual gas analyzer, a vacuum chamber, and a stimulation unit comprised of at least on of an electron source, an ion source, a photon source, and a plasma source. | 05-06-2010 |
| 20100261120 | MIRROR FOR GUIDING A RADIATION BUNDLE - A mirror serves for guiding a radiation bundle. The mirror has a basic body and a coating of a reflective surface of the basic body, the coating increasing the reflectivity of the mirror. A heat dissipating device serves for dissipating heat deposited in the coating. The heat dissipating device has at least one Peltier element. The coating is applied directly on the Peltier element. A temperature setting apparatus has at least one temperature sensor for a temperature of the reflective surface. A regulating device of the Temperature setting apparatus can be connected to the at least one Peltier element and is signal-connected to the at least one temperature sensor. The result is a mirror in which a heat dissipating capacity of the heat dissipating device is improved. | 10-14-2010 |
| 20110058147 | CLEANING MODULE AND EUV LITHOGRAPHY DEVICE WITH CLEANING MODULE - A cleaning module for an EUV lithography device with a supply ( | 03-10-2011 |
| 20110211179 | DETECTION OF CONTAMINATING SUBSTANCES IN AN EUV LITHOGRAPHY APPARATUS - An EUV (extreme ultraviolet) lithography apparatus ( | 09-01-2011 |
