| Patent application number | Description | Published |
|---|
| 20090111243 | SOI SUBSTRATES WITH A FINE BURIED INSULATING LAYER - A method of producing a semiconductor structure having a buried insulating layer having a thickness between 2 and 25 nm, by: forming at least one insulating layer on a surface of a first or second substrate, or both, wherein the surfaces are free from an insulator or presenting a native oxide layer resulting from exposure of the substrates to ambient conditions; assembling the first and second substrates; and thinning down the first substrate, in order to obtain the semiconductor structure. In this method, the insulating layer forming stage is a plasma activation based on an oxidizing or nitriding gas. | 04-30-2009 |
| 20110012200 | SUBSTRATE HAVING A CHARGED ZONE IN AN INSULATING BURIED LAYER - Embodiments of the invention relate to substrates comprising a base wafer, an insulating layer and a top semiconductor layer, wherein the insulating layer comprises at least a zone wherein a density of charges is in absolute value higher than 10 | 01-20-2011 |
| 20110165758 | METHOD FOR MAKING A STRUCTURE COMPRISING A STEP FOR IMPLANTING IONS IN ORDER TO STABILIZE THE ADHESIVE BONDING INTERFACE - The invention relates to a method for making a structure for use ion applications in the fields of electronics, optics or optoelectronics. The structure includes a thin layer of semiconducting material on a supporting substrate. The method includes bonding the thin layer onto the supporting substrate by molecular adhesion at a bonding interface to obtain a structure; implanting ions at the bonding interface to transfer atoms from the thin layer to transfer atoms between the thin layer and the supporting substrate or vice versa; and heat-treating the structure in order to stabilize the bonding interface. | 07-07-2011 |
| 20110177673 | METHOD FOR PRODUCING A STACK OF SEMI-CONDUCTOR THIN FILMS - A method for producing a stacked structure having an ultra thin buried oxide (UTBOX) layer therein by forming an electrical insulator layer on a donor substrate, introducing elements into the donor substrate through the insulator layer, forming an electrical insulator layer, on a second substrate, and bonding the two substrates together to form the stack, with the two insulator layers limiting the diffusion of water and forming the UTBOX layer between the two substrates at a thickness of less than 50 nm, wherein the donor oxide layer has, during bonding, a thickness at least equal to that of the bonding oxide layer. | 07-21-2011 |
| 20110183493 | PROCESS FOR MANUFACTURING A STRUCTURE COMPRISING A GERMANIUM LAYER ON A SUBSTRATE - The present invention relates to a process for manufacturing a structure comprising a germanium layer ( | 07-28-2011 |
| 20110193201 | METHOD TO FABRICATE AND TREAT A STRUCTURE OF SEMICONDUCTOR-ON-INSULATOR TYPE, ENABLING DISPLACEMENT OF DISLOCATIONS, AND CORRESPONDING STRUCTURE - The present invention notably concerns a method to fabricate and treat a structure of semiconductor-on-insulator type, successively comprising a carrier substrate ( | 08-11-2011 |
| 20110207295 | METHOD OF DETACHING SEMI-CONDUCTOR LAYERS AT LOW TEMPERATURE - A method for producing a structure having an ultra thin buried oxide (UTBOX) layer by assembling a donor substrate with a receiver substrate wherein at least one of the substrates includes an insulating layer having a thickness of less than 50 nm that faces the other substrate, conducting a first heat treatment for reinforcing the assembly between the two substrates at temperature below 400° C., and conducting a second heat treatment at temperature above 900° C., wherein the exposure time between 400° C. and 900° C. between the heat treatments is less than 1 minute and advantageously less than 30 seconds. | 08-25-2011 |
| 20110266651 | METHOD FOR MANUFACTURING COMPONENTS - The invention relates to a method for manufacturing components on a mixed substrate. It comprises the following steps: —providing a substrate of the semiconductor-on-insulator (SeOI) type comprising a buried oxide layer between a supporting substrate and a thin layer, —forming in this substrate a plurality of trenches opening out at the free surface of the thin layer and extending over a depth such that it passes through the thin layer and the buried oxide layer, these primary trenches delimiting at least one island of the SeOI substrate, —forming a mask inside the primary trenches and as a layer covering the areas of the free surface of the thin layer located outside the islands, —proceeding with heat treatment for dissolving the buried oxide layer present at the island, so as to reduce the thickness thereof. | 11-03-2011 |
