| Patent application number | Description | Published |
|---|
| 20080197474 | Semiconductor device package with multi-chips and method of the same - The present invention provides a semiconductor device package with the multi-chips comprising a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. At least a first die having first bonding pads is disposed within the die receiving through hole. A first adhesion material is formed under the die and a second adhesion material is filled in the gap between the die and sidewall of the die receiving though hole of the substrate. Then, a first bonding wire is formed to couple the first bonding pads and the first contact pads. Further, at least a second die having second bonding pads is placed on the first die. A second bonding wire is formed to couple to the second bonding pads and the first contact pads. A dielectric layer is formed on the first and second bonding wire, the first and second die and the substrate. | 08-21-2008 |
| 20080197480 | Semiconductor device package with multi-chips and method of the same - The present invention provides a semiconductor device package with the multi-chips comprising a substrate with a die receiving through hole, a conductive connecting through holes structure and coupled the first contact pads on an upper surface and second contact pads on a lower surface of the substrate through a conductive connecting through holes. A first die having first bonding pads is disposed within the die receiving through hole. A first adhesion material is formed under the die and a second adhesion material is filled in the gap between the die and sidewall of the die receiving though holes of the substrate. Then, a first conductive wire is formed to couple the first bonding pads and the first contact pads. Further, a second die having second bonding pads is attached on the first die. A second conductive wire is formed to couple the second bonding pads and the first contact pads. A plurality of dielectric layer is formed on the first and second bonding wire, the first and second die and the substrate. | 08-21-2008 |
| 20080211075 | IMAGE SENSOR CHIP SCALE PACKAGE HAVING INTER-ADHESION WITH GAP AND METHOD OF THE SAME - A structure of semiconductor device package having inter-adhesion with gap comprising: a chip with bonding pads and a sensor area embedded into a substrate with die window and inter-connecting through holes, wherein a RDL is formed over the substrate for coupling between the bonding pads and the inter-connecting through holes; a multiple rings (dam bar) formed over the substrate, the RDL, and the bonding pads area except the sensor area; an adhesive glues fill into the space of the multiple ring except the sensor area; and a transparency material bonded on the top of the multiple ring and the adhesive glues, wherein the adhesive glues adhesion between the transparency material and the multiple rings. | 09-04-2008 |
| 20080211080 | Package structure to improve the reliability for WLP - The present invention provides a package structure to improve the reliability for WLP (Wafer Level Package). The package structure includes at least two areas. One area is harder than another. The hard area sustains more shears resulting from board drop test than the soft area in order to disperse the shear in the soft area to avoid the peeling of the buffer layers within the soft area. | 09-04-2008 |
| 20080224248 | Image sensor module having build-in package cavity and the method of the same - The present invention provides an image sensor module having build-in package cavity and the Method of the same. An image sensor module structure comprising a substrate with a package receiving cavity formed within an upper surface of the substrate and conductive traces within the substrate, and a package having a die with a micro lens disposed within the package receiving cavity. A dielectric layer is formed on the package and the substrate, a re-distribution conductive layer (RDL) is formed on the dielectric layer, wherein the RDL is coupled to the die and the conductive traces and the dielectric layer has an opening to expose the micro lens. A lens holder is attached on the substrate and the lens holder has a lens attached an upper portion of the lens holder. A filter is attached between the lens and the micro lens. The structure further comprises a passive device on the upper surface of the substrate within the lens holder. | 09-18-2008 |
| 20080224276 | Semiconductor device package - The present invention provides a package structure and a method for forming the same; wherein the structure comprises a substrate with certain open through holes filled with conducting metals for performing electrical connection or heat dissipation, a chip with bonding pads attached on the contacting pad by an adhesive with high thermal conductivity, wire bounded the contacting pad and the chip pad, a protection layer covered on the chip, wire and a portion of pad by molding or dispensing and a solder ball disposed on the pad. The advantages of the present invention are: the structure is reduced; the heat dissipation of the structure is enhanced; the structure can form package on package structure; the pads provides better ground shielding, heat dissipation of the structure. | 09-18-2008 |
| 20080230884 | Semiconductor device package having multi-chips with side-by-side configuration and method of the same - The present invention provides a semiconductor device package having multi-chips with side-by-side configuration comprising a substrate with die receiving through holes, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. A first die having first bonding pads and a second die having second bonding pads are respectively disposed within the die receiving through holes. The first adhesion material is formed under the first and second die and the substrate, and the second adhesion material is filled in the gap between the first and second die and sidewall of the die receiving though holes of the substrate. Further, bonding wires are formed to couple between the first bonding pads and the first contact pads, between the second bonding pads and the first contact pads. A dielectric layer is formed on the bonding wires, the first and second die and the substrate. A build up layer is form on the lower surface of substrate and the back side of first and second die. | 09-25-2008 |
| 20080251908 | Semiconductor device package having multi-chips with side-by-side configuration and method of the same - The present invention provides a semiconductor device package with the die receiving through hole and connecting through hole structure comprising a substrate with a die receiving through hole, a connecting through hole structure and a first contact pad. A die is disposed within the die receiving through hole. An adhesion material is formed under the die and filled in the gap between the die and sidewall of the die receiving though hole. Further, a wire bonding is formed to couple to the bonding pads and the first contact pad. A dielectric layer is formed on the wire bonding, the die and the substrate. A second contact pad is formed at the lower surface of the substrate and under the connecting through hole structure. | 10-16-2008 |
| 20080265393 | STACK PACKAGE WITH RELEASING LAYER AND METHOD FOR FORMING THE SAME - The present invention provides a structure and a of stacked dice package and a process for forming the same, wherein an elastic adhesive layer applied on the first die covering all top surface of the first die and forming rims at the peripheral edges of the first die except the openings formed on the first contacting pads. With this shape of the elastic adhesive layer, the present invention can avoid micro crack happens in the die while performing wire bonding on the contacting pad of the die. | 10-30-2008 |
| 20080274593 | Semiconductor device package with multi-chips and method of the same - The present invention provides a semiconductor device package with the multi-chips comprising a substrate with at least a die receiving through hole, connecting through holes structure and first contact pads on an upper surface and second contact pads on a lower surface of the substrate. At least a first die having first bonding pads is disposed within the die receiving through hole. A first adhesion material is formed under the die and a second adhesion material is filled in the gap between the die and sidewall of the die receiving though hole of the substrate. Then, a first bonding wire is formed to couple the first bonding pads and the first contact pads. Further, at least a second die having second bonding pads is placed on the first die. A second bonding wire is formed to couple to the second bonding pads and the first contact pads. A dielectric layer is formed on the first and second bonding wire, the first and second die and the substrate. | 11-06-2008 |
| 20090008777 | INTER-CONNECTING STRUCTURE FOR SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF THE SAME - An interconnecting structure for a semiconductor die assembly, comprising: a substrate with pre-formed wiring circuit formed therein; a die having contact pads on an active surface; an adhesive material formed over the substrate to adhere the die over the substrate, wherein the substrate includes a via through the substrate and the adhesive material; and conductive material refilled into the via to couple the contact pads of the die to the wiring circuit of the substrate. | 01-08-2009 |
