| Patent application number | Description | Published |
|---|
| 20080283826 | ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C. | 11-20-2008 |
| 20080283827 | FUSED-FLUORENE-CONTAINING MATERIALS AS SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises fused-fluorene-containing materials. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C. | 11-20-2008 |
| 20090081374 | ORGANOSILOXANE MATERIALS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 03-26-2009 |
| 20090081826 | PROCESS FOR MAKING DOPED ZINC OXIDE - The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material. | 03-26-2009 |
| 20090081827 | PROCESS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 03-26-2009 |
| 20090081842 | PROCESS FOR ATOMIC LAYER DEPOSITION - The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process. | 03-26-2009 |
| 20090081883 | PROCESS FOR DEPOSITING ORGANIC MATERIALS - A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film. | 03-26-2009 |
| 20090130608 | PHOTOPATTERNABLE DEPOSITION INHIBITOR CONTAINING SILOXANE - An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material. | 05-21-2009 |
| 20090130609 | Colored mask combined with selective area deposition - The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material. | 05-21-2009 |
| 20090261323 | N,N'-DI(ARYLALKYL)-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C. | 10-22-2009 |
| 20090312553 | N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C. | 12-17-2009 |
| 20100178728 | ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim | 07-15-2010 |
