| Patent application number | Description | Published |
|---|
| 20080242094 | METHOD OF MAKING A SEMICONDUCTOR STRUCTURE UTILIZING SPACER REMOVAL AND SEMICONDUCTOR STRUCTURE - A method for making a semiconductor structure ( | 10-02-2008 |
| 20080254586 | SOI SEMICONDUCTOR DEVICE WITH BODY CONTACT AND METHOD THEREOF - A method including providing a substrate and providing an insulating layer overlying the substrate is provided. The method further includes providing a body region comprising a body material overlying the insulating layer. The method further includes forming at least one transistor overlying the insulating layer, the at least one transistor having a source, a drain and a gate with a sidewall spacer, the sidewall spacer comprising a substantially uniform geometric shape around the gate, the gate overlying the body region. The method further includes forming a first silicide region within the source and a second silicide region within the drain, the first silicide region having a differing geometric shape than the second silicide region and being electrically conductive between the body region and the source. | 10-16-2008 |
| 20080261385 | METHOD FOR SELECTIVE REMOVAL OF A LAYER - A method for forming a semiconductor device includes forming a liner over a semiconductor material including a control electrode. The method further includes forming a first spacer adjacent to the control electrode, wherein the first spacer has a first width. The method further includes implanting current electrode dopants. The method further includes removing the first spacer. The method further includes forming a second spacer adjacent the control electrode, wherein the second spacer has a second width and wherein the second width is less than the first width. The method further includes using the second spacer as a protective mask to selectively remove the liner. The method further includes forming a stressor layer overlying the control electrode and current electrode regions. | 10-23-2008 |
| 20090093108 | SEMICONDUCTOR FABRICATION PROCESS INCLUDING SILICIDE STRINGER REMOVAL PROCESSING - A semiconductor fabrication process includes forming a gate electrode ( | 04-09-2009 |
| 20090159111 | Photovoltaic device having a textured metal silicide layer - A semiconductor device is formed on a low cost substrate | 06-25-2009 |
| 20090162966 | Structure and method of formation of a solar cell - A semiconductor device is formed on a low cost substrate | 06-25-2009 |
| 20090184309 | PHASE CHANGE MEMORY CELL WITH HEATER AND METHOD THEREFOR - A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure. | 07-23-2009 |
| 20090280588 | METHOD OF FORMING AN ELECTRONIC DEVICE INCLUDING REMOVING A DIFFERENTIAL ETCH LAYER - A method of forming an electronic device can include forming a metallic layer over a side of a workpiece including a substrate, a differential etch layer, and a semiconductor layer. The differential etch layer may lie between the substrate and the semiconductor layer, and the semiconductor layer may lie along the side of the workpiece. The process can further include selectively removing at least a majority of the differential etch layer from between the substrate and the semiconductor layer, and separating the semiconductor layer and the metallic layer from the substrate. The selective removal can be performed using a wet etching, dry etching, or electrochemical technique. In a particular embodiment, the same plating bath may be used for plating the metallic layer and selectively removing the differential etch layer. | 11-12-2009 |
| 20090280635 | METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION-ENHANCING SPECIES - A method of forming an electronic device can include forming a metallic layer by an electrochemical process over a side of a substrate that includes a semiconductor material. The method can also include introducing a separation-enhancing species into the substrate at a distance from the side, and separating a semiconductor layer and the metallic layer from the substrate, wherein the semiconductor layer is a portion of the substrate. In a particular embodiment, the separation-enhancing species can be incorporated into a metallic layer and moved into the substrate, and in particular embodiment, the separation-enhancing species can be implanted into the substrate. In still another embodiment, both the techniques can be used. In a further embodiment, a dual-sided process can be performed. | 11-12-2009 |
| 20090286393 | METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION TECHNIQUE - A method of forming an electronic device can include forming a patterned layer adjacent to a side of a substrate including a semiconductor material. The method can also include separating a semiconductor layer and the patterned layer from the substrate, wherein the semiconductor layer is a portion of the substrate. | 11-19-2009 |
| 20100227475 | METHOD OF FORMING AN ELECTRONIC DEVICE USING A SEPARATION TECHNIQUE - A method of forming an electronic device can include forming a metallic layer by an electrochemical process over a side of a substrate that includes a semiconductor material. The method can also include introducing a separation-enhancing species into the substrate at a distance from the side, and separating a semiconductor layer and the metallic layer from the substrate, wherein the semiconductor layer is a portion of the substrate. In a particular embodiment, the separation-enhancing species can be incorporated into a metallic layer and moved into the substrate, and in particular embodiment, the separation-enhancing species can be implanted into the substrate. In still another embodiment, both the techniques can be used. In a further embodiment, a dual-sided process can be performed. | 09-09-2010 |
