Patent application number | Description | Published |
20090291397 | Methods Of Forming Structures Supported By Semiconductor Substrates - Some embodiments include methods of forming structures supported by semiconductor substrates. Radiation-imageable material may be formed over a substrate and patterned into at least two separated features. A second material may be formed over the features and across one or more gaps between the features. At least one substance may be released from the features and utilized to alter a portion of the second material. The altered portion of the second material may be selectively removed relative to another portion of the second material which is not altered. Also, the features of radiation-imageable material may be selectively removed relative to the altered portion of the second material. The second material may contain one or more inorganic components dispersed in an organic composition. The substance released from the features of radiation-imageable material may be acid which forms cross-links within such organic composition, an hydroxyl, or any other suitable substance. | 11-26-2009 |
20100055913 | Methods Of Forming A Photoresist-Comprising Pattern On A Substrate - A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed. | 03-04-2010 |
20100130016 | METHODS OF FORMING A MASKING PATTERN FOR INTEGRATED CIRCUITS - In some embodiments, methods for forming a masking pattern for an integrated circuit are disclosed. In one embodiment, mandrels defining a first pattern are formed in a first masking layer over a target layer. A second masking layer is deposited to at least partially fill spaces of the first pattern. Sacrificial structures are formed between the mandrels and the second masking layer. After depositing the second masking layer and forming the sacrificial structures, the sacrificial structures are removed to define gaps between the mandrels and the second masking layer, thereby defining a second pattern. The second pattern includes at least parts of the mandrels and intervening mask features alternating with the mandrels. The second pattern may be transferred into the target layer. In some embodiments, the method allows the formation of features having a high density and a small pitch while also allowing the formation of features having various shapes and sizes. | 05-27-2010 |
20100144151 | Methods of Fabricating Substrates - A method of fabricating a substrate includes forming spaced first features over a substrate. An alterable material is deposited over the spaced first features and the alterable material is altered with material from the spaced first features to form altered material on sidewalls of the spaced first features. A first material is deposited over the altered material, and is of some different composition from that of the altered material. The first material is etched to expose the altered material and spaced second features comprising the first material are formed on sidewalls of the altered material. Then, the altered material is etched from between the spaced second features and the spaced first features. The substrate is processed through a mask pattern comprising the spaced first features and the spaced second features. Other embodiments are disclosed. | 06-10-2010 |
20100144153 | Methods of Fabricating Substrates - A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed. | 06-10-2010 |
20110217843 | PATTERNING MASK AND METHOD OF FORMATION OF MASK USING STEP DOUBLE PATTERNING - A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment. | 09-08-2011 |
20110305997 | METHODS OF FORMING A PATTERN IN A MATERIAL AND METHODS OF FORMING OPENINGS IN A MATERIAL TO BE PATTERNED - Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment. | 12-15-2011 |
20110306206 | Methods Of Forming Contact Openings And Methods Of Increasing Contact Area In Only One Of X and Y Axes In The Fabrication Of Integrated Circuitry - A method of forming contact openings in the fabrication of integrated circuitry includes forming a mask which includes at least one of photoresist and amorphous carbon received over a plurality of spaced conductive line constructions. The conductive line constructions include insulative caps and insulative sidewalls. The mask includes a plurality of spaced lines and trench spaces between adjacent of the spaced lines. The spaced lines and the trench spaces angle relative to the conductive line constructions. The trench spaces are received over node locations which are received between adjacent of the conductive line constructions. The at least one of photoresist and amorphous carbon is treated with a plasma to reduce lateral width of the spaced lines and to increase lateral width of the trench spaces. After the treating, contact openings are etched to the node locations selectively relative to the insulative caps and the insulative sidewalls. | 12-15-2011 |
20110316021 | EPITAXIAL GROWTH METHOD AND DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 12-29-2011 |
20120038895 | LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY - Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article. | 02-16-2012 |
20120115074 | Methods Of Forming Patterned Masks - Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material. | 05-10-2012 |
20120164566 | PATTERNING MASK AND METHOD OF FORMATION OF MASK USING STEP DOUBLE PATTERNING - A method of forming a mask for use in fabricating an integrated circuit includes forming first non-removable portions of a photoresist material through a mask having a plurality of apertures, shifting the mask, forming second non-removable second portions of the photoresist material overlapping the first portions, and removing removable portions of the photoresist material arranged between the first and second portions. The formed photoresist mask may be used to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment. | 06-28-2012 |
20120256191 | EPITAXIAL GROWTH METHOD AND DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 10-11-2012 |
20120257177 | ILLUMINATION DESIGN FOR LENS HEATING MITIGATION - A method for reducing the effects of lens heating of a lens in an imaging process includes determining heat load locations on the lens according to an illumination source and a reticle design, obtaining a lens response characterization according to the heat load locations, and utilizing the heat load locations and the lens response characterization to generate a lens heating sensitivity map. | 10-11-2012 |
20120295445 | Methods of Fabricating Substrates - A method of fabricating a substrate includes forming spaced first features and spaced second features over a substrate. The first and second features alternate with one another and are spaced relative one another. Width of the spaced second features is laterally trimmed to a greater degree than any lateral trimming of width of the spaced first features while laterally trimming width of the spaced second features. After laterally trimming of the second features, spacers are formed on sidewalls of the spaced first features and on sidewalls of the spaced second features. The spacers are of some different composition from that of the spaced first features and from that of the spaced second features. After forming the spacers, the spaced first features and the spaced second features are removed from the substrate. The substrate is processed through a mask pattern comprising the spacers. Other embodiments are disclosed. | 11-22-2012 |
20120322269 | Methods of Fabricating Substrates - A method of fabricating a substrate includes forming first and second spaced features over a substrate. The first spaced features have elevationally outermost regions which are different in composition from elevationally outermost regions of the second spaced features. The first and second spaced features alternate with one another. Every other first feature is removed from the substrate and pairs of immediately adjacent second features are formed which alternate with individual of remaining of the first features. After such act of removing, the substrate is processed through a mask pattern comprising the pairs of immediately adjacent second features which alternate with individual of the remaining of the first features. Other embodiments are disclosed. | 12-20-2012 |
20130004889 | Methods of Forming Patterned Masks - Some embodiments include methods in which spaced-apart first features are formed from a first material having a reflow temperature. Second material is formed along sidewalls of the first features, and third material is formed over the second material and the first features. The third material may be formed at a temperature above the reflow temperature of the first material, and the second material may support the first features so that the first features do not collapse even though they are exposed to such temperature. In some embodiments the third material has an undulating topography. Fourth material may be formed within the valleys of the undulating topography, and subsequently the first features may be removed together with at least some of the third material to leave a pattern comprising second features formed from the second material and pedestals formed from the fourth material. | 01-03-2013 |
20130052566 | LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS - Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating. | 02-28-2013 |
20130216795 | RETICLE DESIGN FOR THE REDUCTION OF LENS HEATING PHENOMENON - A reticle for lens heating mitigation includes a substrate, a target pattern and a redistributive pattern. The substrate includes a live pattern region and the target pattern is disposed within the live pattern region for constructing the target pattern onto a wafer. The redistributive pattern is also disposed within the live pattern region for redistributing energy onto a lens without being printed onto the wafer and without correcting said target pattern to be printed onto the wafer. | 08-22-2013 |
20130256692 | EPITAXIAL DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 10-03-2013 |
20130309871 | METHODS OF FORMING A MASKING PATTERN FOR INTEGRATED CIRCUITS - In some embodiments, methods for forming a masking pattern for an integrated circuit are disclosed. In one embodiment, mandrels defining a first pattern are formed in a first masking layer over a target layer. A second masking layer is deposited to at least partially fill spaces of the first pattern. Sacrificial structures are formed between the mandrels and the second masking layer. After depositing the second masking layer and forming the sacrificial structures, the sacrificial structures are removed to define gaps between the mandrels and the second masking layer, thereby defining a second pattern. The second pattern includes at least parts of the mandrels and intervening mask features alternating with the mandrels. The second pattern may be transferred into the target layer. In some embodiments, the method allows the formation of features having a high density and a small pitch while also allowing the formation of features having various shapes and sizes. | 11-21-2013 |
20130323628 | RETICLE WITH COMPOSITE POLARIZER AND METHOD OF SIMULTANEOUS OPTIMIZATION OF IMAGING OF A SET OF DIFFERENT PATTERNS - A reticle with a composite polarizer includes: a transparent substrate; a patterned layer disposed on said transparent substrate; and a polarizing filter disposed on said transparent substrate, wherein said transparent substrate is substantially transparent with respect to illumination light, said patterned layer is partially opaque with respect to said illumination light, and said polarizing filter is capable of selectively polarizing said illumination light. | 12-05-2013 |
20130323924 | METHODS OF FORMING A PATTERN IN A MATERIAL AND METHODS OF FORMING OPENINGS IN A MATERIAL TO BE PATTERNED - Methods of forming a pattern in a material and methods of forming openings in a material to be patterned are disclosed, such as a method that includes exposing first portions of a first material to radiation through at least two apertures of a mask arranged over the first material, shifting the mask so that the at least two apertures overlap a portion of the first portions of the first material, and exposing second portions of the first material to radiation through the at least two apertures. The first portions and the second portions will overlap in such a way that non-exposed portions of the first material are arranged between the first portions and second portions. The non-exposed or exposed portions of the first material may then be removed. The remaining first material may be used as a photoresist mask to form vias in an integrated circuit. The pattern of vias produced have the capability to exceed the current imaging resolution of a single exposure treatment. | 12-05-2013 |
20140054756 | ANTI SPACER PROCESS AND SEMICONDUCTOR STRUCTURE GENERATED BY THE ANTI SPACER PROCESS - An anti spacer process, which comprises: (a) providing a resist layer including a non-uniform shape; (b) coating a target layer above the resist layer; (c) providing anti spacer trenches (spa) between the target layer and the resist layer; and (d) connecting at least part of the anti spacer trenches (spa) together to isolate a first part of the target layer and a second part of the target layer. | 02-27-2014 |
20140106280 | LITHOGRAPHY METHODS, METHODS FOR FORMING PATTERNING TOOLS AND PATTERNING TOOLS - Methods of lithography, methods for forming patterning tools, and patterning tools are described. One such patterning tool include an active region that forms a first diffraction image on a lens when in use, and an inactive region that forms a second diffraction image on a lens when in use. The inactive region includes a pattern of phase shifting features formed in a substantially transparent material of the patterning tool. Patterning tools and methods, as described, can be used to compensate for lens distortion from effects such as localized heating. | 04-17-2014 |
20140247476 | LITHOGRAPHY WAVE-FRONT CONTROL SYSTEM AND METHOD - Some embodiments include system and methods to obtain information for adjusting variations in features formed on a substrate of a semiconductor device. Such methods can include determining a first pupil in an illumination system used to form a first feature, and determining a second pupil used to form a second feature. The methods can also include determining a pupil portion belonging to only one of the pupils, and generating a modified pupil portion from the pupil portion. Information associated with the modified pupil portion can be obtained for controlling a portion of a projection lens assembly of an illumination system. Other embodiments are described. | 09-04-2014 |
20140284614 | METHODS FOR EPITAXIAL DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 09-25-2014 |
20150349204 | EPITAXIAL DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 12-03-2015 |
Patent application number | Description | Published |
20130252142 | IMAGING DEVICES, METHODS OF FORMING SAME, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES - An imaging device comprising a first region and a second region. Imaging features in the first region and assist features in the second region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed. | 09-26-2013 |
20130302981 | Semiconductor Constructions And Methods Of Forming Patterns - Some embodiments include methods of forming patterns. A semiconductor substrate is formed to comprise an electrically insulative material over a set of electrically conductive structures. An interconnect region is defined across the electrically conductive structures, and regions on opposing sides of the interconnect region are defined as secondary regions. A two-dimensional array of features is formed over the electrically insulative material. The two-dimensional array extends across the interconnect region and across the secondary regions. A pattern of the two-dimensional array is transferred through the electrically insulative material of the interconnect region to form contact openings that extend through the electrically insulative material and to the electrically conductive structures, and no portions of the two-dimensional array of the secondary regions is transferred into the electrically insulative material. | 11-14-2013 |
20140127909 | Methods Of Forming A Pattern On A Substrate - A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed. | 05-08-2014 |
20140145311 | METHODS OF FORMING FEATURES IN SEMICONDUCTOR DEVICE STRUCTURES - Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed. | 05-29-2014 |
20140299971 | METHODS OF FORMING A REVERSED PATTERN IN A SUBSTRATE, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES - A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods. | 10-09-2014 |
20140353803 | SEMICONDUCTOR DEVICE STRUCTURES - Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed. | 12-04-2014 |
20140370684 | METHODS FOR FORMING SUB-RESOLUTION FEATURES IN SEMICONDUCTOR DEVICES - Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. Portions of the second mask material underlying the first mask material at intersections of the first openings and second openings are removed to form holes in the second mask material and to expose a substrate underlying the second mask material. | 12-18-2014 |
20150015860 | Reticles, And Methods Of Mitigating Asymmetric Lens Heating In Photolithography - A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication. | 01-15-2015 |
20150132965 | Method for Using Post-Processing Methods for Accelerating EUV Lithography - Methods for using high-speed EUV resists including resists having additives that may be detrimental to etch chambers. Methods include using reversal materials and/or reversal techniques, as well as diffusion-limited etch-back and slimming for pattern creation and transfer. A substrate with high-speed EUV resist is lithographically patterned and developed into a patterned resist mask. An image reversal material is then over-coated on the patterned resist mask such that the image reversal material fills and covers the patterned resist mask. An upper portion of the image reversal material is removed such that top surfaces of the patterned resist mask are exposed. The patterned resist mask is removed such that the image reversal material remains resulting in a patterned image reversal material mask. Residual resist material is removed via a slimming process using an acid diffusion and subsequent development. | 05-14-2015 |
20150140825 | Method for Chemical Polishing and Planarization - A chemical planarization process described herein can be used for planarizing a substrate without using mechanical abrasion. A developable planarization material can be applied to a substrate having a non-planar topography, such that a planar surface results. The resulting planarization layer can cover existing structures on the substrate. A top portion of the planarization layer can be solubilized using a solubility-changing agent, and then the soluble portion can be removed thereby slimming a height of the planarization material to a target value, which can be a top surface of a tallest underlying structure. With the substrate planarized, additional patterning operations can be executed. | 05-21-2015 |
20150146178 | Substrate Tuning System and Method Using Optical Projection - Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. The substrate signature can spatially represent non-uniformities across the surface of the substrate. Such non-uniformities can include energy, heat, critical dimensions, photolithographic exposure dosages, etc. Such pixel-based light projection can be used to tune various properties of substrates, including tuning of critical dimensions, heating uniformity, evaporative cooling, and generation of photo-sensitive agents. Combining such pixel-based light projection with photolithographic patterning processes and/or heating processes improves processing uniformity and decreases defectivity. Embodiments can include using a digital light processing (DLP) chip, grating light valve (GLV), or other grid-based micro projection technology. | 05-28-2015 |
20150147827 | Substrate Tuning System and Method Using Optical Projection - Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. The substrate signature can spatially represent non-uniformities across the surface of the substrate. Such non-uniformities can include energy, heat, critical dimensions, photolithographic exposure dosages, etc. Such pixel-based light projection can be used to tune various properties of substrates, including tuning of critical dimensions, heating uniformity, evaporative cooling, and generation of photo-sensitive agents. Combining such pixel-based light projection with photolithographic patterning processes and/or heating processes improves processing uniformity and decreases defectivity. Embodiments can include using a digital light processing (DLP) chip, grating light valve (GLV), or other grid-based micro projection technology. | 05-28-2015 |
20150160557 | Direct Current Superposition Freeze - Systems and methods include improved techniques for patterning substrates, including improvements to double patterning techniques. Direct current superposition plasma processing is combined with photolithographic patterning techniques. An electron flux or ballistic electron beam from a plasma processing system can induce cross linking in a given photoresist, which alters the photoresist to be resistant to subsequent light exposure and/or developer treatments. Plasma processing is also used to add a protective layer of oxide on exposed surfaces of a first relief pattern, thereby protecting the photoresist from a developing acid. By protecting an initial photoresist relief pattern from developing acid, a second pattern can be applied on and/or between the first photoresist relief pattern thereby doubling an initial pattern or otherwise increasing pattern density. This combined pattern can then be used for subsequent microfabrication such as transferring the combined pattern into one or more underlying layers. | 06-11-2015 |
20150206760 | Substrate Mask Patterns, Methods Of Forming A Structure On A Substrate, Methods Of Forming A Square Lattice Pattern From An Oblique Lattice Pattern, And Methods Of Forming A Pattern On A Substrate - A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method. | 07-23-2015 |
20150209707 | Active Filter Technology for Photoresist Dispense System - Disclosed herein are systems and methods for filtering photoresist liquids that may be dispensed into a process chamber used to manufacture semiconductor devices. The system may include one or more active filter devices that distribute electrical or mechanical energy into a fluid conduit. The energy may be used to remove particles or molecules based on their size, weight, ionic charge, molecular weight, or a combination thereof. The energy sources may include, but are not limited to, electromagnetic, acoustic, pneumatic, and/or mechanical vibration sources. | 07-30-2015 |
20150210812 | Defect-less Directed Self-Assembly - Techniques herein enable executing directed self-assembly of block copolymer patterning processes that result in patterns having no defects or a negligibly low occurrence of defects to have a high yield of functional patterns and devices. Methods include executing a same DSA patterning sequence two or more times such that any defects in from a phase-separated first block copolymer film are corrected with a phase-separated second block copolymer film as any defect in the second block copolymer film would only temporarily cover a feature already created and/or transferred from first block copolymer film. | 07-30-2015 |
20150211836 | Systems and Methods for Generating Backside Substrate Texture Maps for Determining Adjustments for Front Side Patterning - Techniques disclosed herein a method and system for generating texture maps for the backside of a substrate. The texture maps may be used to determine process adjustments (e.g., depth of focus) for subsequent processing of the front side of the substrate. | 07-30-2015 |
20150212421 | System and Method for Shifting Critical Dimensions of Patterned Films - Techniques herein include systems and methods that provide a spatially-controlled projection of electromagnetic radiation, such as light, onto a substrate as a mechanism of controlling or modulating critical dimensions of various features and structures being micro-fabricated on a substrate. Combining such spatial light projection with photolithographic exposure can achieve significant improvements in critical dimension uniformity across a surface of a substrate. In general, methods herein include patterning processes that identify or receive a critical dimension signature that spatially characterizes critical dimension values that correspond to the substrate. A pattern of electromagnetic radiation is projected onto a patterning film coated on substrate using a digital pixel-based projection system. A conventional photolithographic exposure process is executed subsequent to, or prior to, the pixel-based projection. The patterning film can then be developed to yield a relief pattern having critical dimensions shaped by both exposure processes. | 07-30-2015 |
20150243518 | METHOD FOR MULTIPLYING PATTERN DENSITY BY CROSSING MULTIPLE PATTERNED LAYERS - Techniques disclosed herein include increasing pattern density for creating high-resolution contact openings, slots, trenches, and other features. A first line-generation sequence creates a first layer of parallel lines of alternating and differing material by using double-stacked mandrels, sidewall image transfer, and novel planarization schemes. This line-generation sequence is repeated on top of the first layer of parallel lines, but with the second layer of parallel lines of alternating and differing material being oriented to elevationally cross lines of the first layer. Etching selective to one of the materials within the double stack of parallel lines results in defining a pattern of openings, slots, etc., which can be transferred into underlying layers. Such patterning techniques herein can quadruple a density of features in a given pattern, which can be described as created a pitch quad. | 08-27-2015 |
20150243519 | Method for Patterning a Substrate for Planarization - Techniques disclosed herein include increasing pattern density for creating high-resolution contact openings, slots, trenches, and other features. A conformal spacer is applied on a bi-layer or tri-layer mandrel (multi-layer) or other relief feature. The conformal spacer thus wraps around the mandrels and is also deposited on an underlying layer. A fill material is deposited to fill gaps or spaces between sidewall spacers. A CMP planarization step then removes substrate stack material down to a material interface of the bi-layer or tri-layer mandrel, with a middle or lower material of the mandrel being a CMP-stop material. This technique essentially cuts off or removes rounded features such as upper portions of sidewall spacers, thereby providing a spacer material with a planar top surface that can be uniformly etched and transferred to underlying layers. | 08-27-2015 |
20150243554 | Method for Creating Contacts in Semiconductor Substrates - Techniques include methods for creating contacts for microchips, solar films, etc., for electrically connecting conductive elements and/or for current spreading. Embodiments herein include using an oversized “board” or contact array positioned between a lower layer and an upper layer. This contact array is created by directed self-assembly (DSA) of block copolymers. The lower and upper layers can have conductive structures such as lines. The oversized board can be comprised of hundreds, thousands, millions (etc.) of small conductive contact cylinders, lines or other vertical structures, with each conductive structure electrically isolated from adjacent conductive structures in the array. A crossover location of a line on a lower level with a line on an upper level is connected with multiple conductive structures located at the cross over location. | 08-27-2015 |
20150294878 | METHOD FOR PATTERNING CONTACT OPENINGS ON A SUBSTRATE - Techniques herein include methods for patterning substrates including methods for patterning contact openings. Using techniques herein, slot contacts and other openings can be created having a selectable width between approximately 1-30 nanometers or less. Methods include creating trench widths defined by diffusion lengths of photo acid as part of a double patterning scheme. These trenches can then be filled and a separate mask can then be used to isolate segments of trenches. The segments can then be extruded resulting in slot contact openings which are ready to be metallized. These slot contacts have a length defined by lithographic exposure techniques and a width defined by photo acid diffusion lengths. | 10-15-2015 |
20150294917 | Method for Correcting Wafer Bow from Overlay - Described herein are methods for flattening a substrate, such as a semiconductor wafer, to reduce bowing in such substrates. Methods include treating or bombarding a backside surface of a substrate with particles of varying doses, densities, and spatial locations. Particle bombardment and selection is such that the substrate becomes more planar by selectively increasing or decreasing z-height points to reduce overall deflection. One or more tensile or compressive films can be added to the backside surface to be selectively relaxed at specific point locations. Such methods can correct bowing in substrates resulting from various fabrication processes such as thermal annealing. | 10-15-2015 |
20150380307 | METHODS OF FORMING OPENINGS IN SEMICONDUCTOR STRUCTURES - A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. | 12-31-2015 |
Patent application number | Description | Published |
20110052883 | METHODS OF FORMING REVERSED PATTERNS IN A SUBSTRATE AND SEMICONDUCTOR STRUCTURES FORMED DURING SAME - A method of forming a reversed pattern in a substrate. A resist on a substrate is exposed and developed to form a pattern therein, the patterned resist having a first polarity. The polarity of the patterned resist is reversed to a second polarity, and a reversal film is formed over the patterned resist having the second polarity. The patterned resist having the second polarity is removed, forming a pattern in the reversal film. The pattern in the reversal film is then transferred to the substrate. Additional methods of forming a reversed pattern in a substrate are disclosed, as is a semiconductor structure formed during the methods. | 03-03-2011 |
20120177891 | METHODS OF FORMING A PATTERNED, SILICON-ENRICHED DEVELOPABLE ANTIREFLECTIVE MATERIAL AND SEMICONDUCTOR DEVICE STRUCTURES INCLUDING THE SAME - Methods of forming a patterned, silicon-enriched developable antireflective material. One such method comprises forming a silicon-enriched developable antireflective composition. The silicon-enriched developable antireflective composition comprises a silicon-enriched polymer and a crosslinking agent. The silicon-enriched polymer and the crosslinking agent are reacted to form a silicon-enriched developable antireflective material that is insoluble and has at least one acid-sensitive moiety. A positive-tone photosensitive material, such as a positive-tone photoresist, is formed over the silicon-enriched developable antireflective material and regions thereof are exposed to radiation. The exposed regions of the positive-tone photosensitive material and underlying regions of the silicon-enriched developable antireflective material are removed. Additional methods are disclosed, as are semiconductor device structures including a silicon-enriched developable antireflective material. | 07-12-2012 |
20120178026 | IMAGING DEVICES, METHODS OF FORMING SAME, AND METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES - An imaging device comprising at least one array pattern region and at least one attenuation region. A plurality of imaging features in the at least one array pattern region and a plurality of assist features in the at least one attenuation region are substantially the same size as one another and are formed substantially on pitch. Methods of forming an imaging device and methods of forming a semiconductor device structure are also disclosed. | 07-12-2012 |
20120282778 | Methods Of Forming A Pattern On A Substrate - A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated. | 11-08-2012 |
20130309605 | METHODS FOR FORMING RESIST FEATURES, PATTERNS IN A RESIST, AND ARRAYS OF ALIGNED, ELONGATE RESIST FEATURES - Methods of forming resist features, resist patterns, and arrays of aligned, elongate resist features are disclosed. The methods include addition of a compound, e.g., an acid or a base, to at least a lower surface of a resist to alter acidity of at least a segment of one of an exposed, acidic resist region and an unexposed, basic resist region. The alteration, e.g., increase or decrease, in the acidity shifts an acid-base equilibrium to either encourage or discourage development of the segment. Such “chemical proximity correction” techniques may be used to enhance the acidity of an exposed, acidic resist segment, to enhance the basicity of an unexposed, basic resist segment, or to effectively convert an exposed, acidic resist segment to an unexposed, basic resist segment or vice versa. Thus, unwanted line breaks, line merges, or misalignments may be avoided. | 11-21-2013 |
20140011364 | METHODS OF FORMING A PATTERN ON A SUBSTRATE - A method of forming a pattern on a substrate includes forming longitudinally elongated first lines and first sidewall spacers longitudinally along opposite sides of the first lines elevationally over an underlying substrate. Longitudinally elongated second lines and second sidewall spacers are formed longitudinally along opposite sides of the second lines. The second lines and the second sidewall spacers cross elevationally over the first lines and the first sidewall spacers. The second sidewall spacers are removed from crossing over the first lines. The first and second lines are removed in forming a pattern comprising portions of the first and second sidewall spacers over the underlying substrate. Other methods are disclosed. | 01-09-2014 |