Despont
Michel Despont, Postfach CH
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20110047785 | METHODS FOR FABRICATING MAGNETIC TRANSDUCERS USING POST-DEPOSITION TILTING - In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted. | 03-03-2011 |
Michel Despont, Adliswil CH
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20090100553 | SCANNING PROBE-BASED LITHOGRAPHY METHOD - A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages. | 04-16-2009 |
20110020533 | SCANNING PROBE-BASED LITHOGRAPHY METHOD - A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages. | 01-27-2011 |
Michel Despont, Yorktown Heights, NY US
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20090298253 | RESISTOR WITH IMPROVED SWITCHABLE RESISTANCE AND NON-VOLATILE MEMORY DEVICE - A resistor with improved switchable resistance and a non-volatile memory device includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed. | 12-03-2009 |
20100148358 | SEMICONDUCTOR DEVICE WITH A HIGH THERMAL DISSIPATION EFFICIENCY - A semiconductor device having a higher thermal dissipation efficiency includes a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering. | 06-17-2010 |
Michel Despont, General-Werdmullerstrasse CH
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20080258577 | Microsystem and Method for Positioning a Second Element with Respect to a First Element in a Microsystem - A microsystem, comprising a first static element ( | 10-23-2008 |
Michel Despont, General-Werdmuellerstrass CH
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20080247706 | OPTO-ELECTRONIC BOARD - An opto-electronic board including a printed wiring board with an optical waveguide, a metallic area, and a hole, wherein an abutting face of the optical waveguide and an abutting face of the metallic area form a part of the side face of the hole. The opto-electronic board further comprises an opto-electronic circuit with a bonding pad, wherein the opto-electronic circuit is arranged in the hole and soldered with its bonding pad to the abutting face of the metallic area. | 10-09-2008 |
Michel Despont, Zurich CH
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20110109998 | RECORDING HEAD WITH TILTED ORIENTATION - In one embodiment, a read sensor for a recording head for a magnetic media storage system, has first and second shields, and a magneto-resistive sensor disposed between and shielded by the first and second shields in which the sensing axis of the sensor is tilted with respect to the recording surface of the head. In one embodiment, the sensing axis is oriented at an angle between 10 and 60 degrees with respect to the normal of the recording surface. Other embodiments are described and claimed. | 05-12-2011 |
20110126329 | DEVICE COMPRISING A CANTILEVER AND SCANNING SYSTEM - A device including a first part and a second part, one of which is a cantilever, the first and second parts being connected to each other and movable relative to each other. The device includes a magnetic element arranged on the first part and configured to provide a magnetic field. The device further includes a magnetization device arranged on the second part and configured to provide an actuation magnetic field which interacts with the magnetic field of the magnetic element, thereby causing or suppressing relative movement of the first and second parts. A scanning system including such a device is also described. | 05-26-2011 |
20110269302 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - The invention relates to a method of fabricating a semiconductor device. The method includes: providing a semiconductor substrate and locally heating the semiconductor substrate by using a heated tip structure. Locally heating the semiconductor substrate is carried out to locally modify the electrical properties of the semiconductor substrate. The semiconductor substrate can be implanted with dopants, so that locally heating step causes a local activation of the implanted dopants. Furthermore, the semiconductor substrate can be provided with a dopant layer, so that locally heating step causes dopants to diffuse into the semiconductor substrate. | 11-03-2011 |
20130146429 | NANO-ELECTROMECHANICAL SWITCH - A nano-electromechanical switch and a method for designing a nano-electromechanical switch. The nano-electromechanical switch includes at least one actuator electrode and a curved cantilever beam. The curved cantilever beam is adapted to flex in response to an activation voltage applied between the actuator electrode and the curved cantilever beam to provide an electrical contact between the curved cantilever beam and an output electrode of the nano-electromechanical switch. Before, during and after the curved cantilever beam flex in response to the activation voltage, a remaining gap between the curved cantilever beam and the actuator electrode is uniform. | 06-13-2013 |
20130278363 | DEVICE COMPRISING A CANTILEVER AND SCANNING SYSTEM - A device including a first part and a second part, the first and second part being connected to each other and being movable relative to each other. The first part is a cantilever that has a rectangular strip with a probe tip at one end and a magnetic element the other end. The magnetic element is configured to interact with a magnetic field. The first part is connected to the second part by a hinge. | 10-24-2013 |
Michel Despont, Rueschlikon CH
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20110289636 | HIGH-SPEED SCANNING PROBE MICROSCOPE - The invention is directed to a probe for scanning probe microscopy. The probe | 11-24-2011 |
20130015045 | INTEGRATED ELECTRO-MECHANICAL ACTUATORAANM Despont; MichelAACI RueschlikonAACO CHAAGP Despont; Michel Rueschlikon CH - The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process. | 01-17-2013 |
20130105286 | ELECTROMECHANICAL SWITCH DEVICE AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20130140157 | INTEGRATED ELECTRO-MECHANICAL ACTUATOR - The present invention provides an integrated electro-mechanical actuator and a manufacturing method for manufacturing such an integrated electro-mechanical actuator. The integrated electro-mechanical actuator comprises an electrostatic actuator gap between actuator electrodes and an electrical contact gap between contact electrodes. An inclination with an inclination angle is provided between the actuator electrodes and the contact electrodes. The thickness of this electrical contact gap is equal to the thickness of a sacrificial layer which is etched away in a manufacturing process. | 06-06-2013 |
20130205588 | Method and System for Improving Alignment Precision of Parts in MEMS - Methods for improving alignment precision of two parts of an electronic device are disclosed. Two parts are stacked with an intervening rolling element having a first diameter. One part can pivot relative to the other part about the rolling element to bring the two parts into alignment. The pivoting can be achieved by imposing a z-direction force on the parts, such as a magnetic force. The aligned parts can be locked by solidification of solder. Prior to the pivoting step, the one rolling element can be held on one of said two parts using a thermally dissipative material that comprises glycerol. | 08-15-2013 |
Michel Despont, Wadenswil CH
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20120255073 | SCANNING PROBE LITHOGRAPHY APPARATUS AND METHOD, AND MATERIAL ACCORDINGLY OBTAINED - A scanning probe lithography (SPL) apparatus, an SPL method, and a material having a surface thickness patterned according to the SPL method. The apparatus includes: two or more probes with respective shapes, where the respective shapes are different and the respective shapes form, in operation, different patterns in a thickness of a surface of a material processed with the apparatus. | 10-04-2012 |
Michel Despont, General-Werdmuellerstrasse CH
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20120260496 | METHODS FOR FABRICATING MAGNETIC TRANSDUCERS USING POST-DEPOSITION TILTING - In one general embodiment, a method is provided for fabricating magnetic structures using post-deposition tilting. A thin film magnetic transducer structure is formed on a substantially planar portion of a substrate such that a plane of deposition of the thin film transducer structure is substantially parallel to a plane of the substrate. Additionally, the thin film transducer structure is caused to tilt at an angle relative to the plane of the substrate. The thin film transducer is fixed at the angle after being tilted. | 10-18-2012 |
Michel Despont, Neuchatel CH
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20140059843 | FOUR TERMINAL NANO-ELECTROMECHANICAL SWITCH WITH A SINGLE MECHANICAL CONTACT - A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam. | 03-06-2014 |
20140061013 | FOUR TERMINAL NANO-ELECTROMECHANICAL SWITCH WITH A SINGLE MECHANICAL CONTACT - A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam. | 03-06-2014 |
20140062532 | NANO-ELECTRO-MECHANICAL-SWITCH ADIABATIC DYNAMIC LOGIC CIRCUITS - A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates. | 03-06-2014 |
20140097870 | NANO-ELECTRO-MECHANICAL-SWITCH ADIABATIC DYNAMIC LOGIC CIRCUITS - A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates. | 04-10-2014 |
Michel Despont, Cheseaux-Noreaz CH
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20140090964 | Nanoelectromechanical Switch With Localized Nanoscale Conductive Pathway - The present invention is directed to a nanoelectromechanical (NEM) switch comprising two electrodes ( | 04-03-2014 |
20150069472 | ELECTROMECHANICAL SWITCHING DEVICE WITH 2D LAYERED MATERIAL SURFACES - The present invention is notably directed to an electromechanical switching device having: two electrodes, including: a first electrode, having layers of a first 2D layered material, which layers exhibit a first surface; and a second electrode, having layers of a second 2D layered material, which layers exhibit a second surface vis-à-vis said first surface; and an actuation mechanism, where: each of the first and second 2D layered materials is electrically conducting; and at least one of said two electrodes is actuatable by the actuation mechanism to modify a distance between the first surface and the second surface, such as to modify an electrical conductivity transverse to each of the first surface and the second surface and thereby enable current modulation between the first electrode and the second electrode. | 03-12-2015 |
Michel Despont, Au SZ
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20150204731 | MODULATION METHODS FOR CMOS-BASED THERMAL SENSORS - A method and circuit for determining a working temperature of a device, the method comprising: providing a first signal to a device having a temperature-sensitive characteristic; performing a function on the first signal by the device; demodulating a second signal output by the device to obtain a third signal thus generating a signal having reduced 1/f noise component; and based upon the first signal and the second signal, determining a working temperature of the device. | 07-23-2015 |