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Deshmukh, CA
Ajay Deshmukh, San Francisco, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110077478 | Body fluid sampling module with a continuous compression tissue interface surface - A body fluid sampling device includes a housing, a penetrating member positioned in the housing and a test strip. A compliant front end is coupled to the housing. The compliant front-end includes a rigid member with an interior aperture to receive the body fluid from a wound site. | 03-31-2011 |
Harish Deshmukh, Mountain View, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110087919 | MANAGING AVAILABILITY OF A COMPONENT HAVING A CLOSED ADDRESS SPACE - Systems, methods and articles of manufacture are disclosed for managing availability of a component executing in a distributed system. The component may have an address space closed to the distributed system. In one embodiment, the component may be initiated. A state of the component may be analyzed to determine the availability of the component. The determined availability may be transmitted to the distributed system. The component may also be restarted responsive to a request from the distributed system to restart the component. | 04-14-2011 |
| 20110113010 | SYNCHRONIZING AN AUXILIARY DATA SYSTEM WITH A PRIMARY DATA SYSTEM - Systems, methods and articles of manufacture are disclosed for synchronizing a primary data system with an auxiliary data system that processes data for the primary data system. In one embodiment, how current the primary data system and the auxiliary data system are may be determined. Requests sent from the primary data system that were not processed by the auxiliary data system may be determined. The requests may be resent to the auxiliary data system for processing. | 05-12-2011 |
| 20110137864 | HIGH THROUGHPUT, RELIABLE REPLICATION OF TRANSFORMED DATA IN INFORMATION SYSTEMS - Provided are techniques for, in response to a source object being changed by a local transaction, generating log records, wherein each of the log records includes a sequence identifier, a source system entity modification timestamp, a target key, a target partition identifier, and values of source properties, wherein the source properties are identified using a target key indicator. The log records to process are selected based on a phase value of each log record, wherein the phase value is one of submitted, in-flight, and source system entity state change complete. One or more disjoint partitions are assigned to each of multiple processing instances. Under control of each of the multiple processing instances, it is determined whether to transmit a log record in the one or more disjoint partitions assigned to said processing instance and, in response to determining that the log record is to be transmitted, the log record is transmitted. | 06-09-2011 |
Hemant Deshmukh, San Diego, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090123550 | CORTICOSTEROID COMPOSITIONS - Provided herein are methods for treating, preventing or alleviating the symptoms of and inflammation associated with inflammatory diseases and conditions of the gastrointestinal tract, for example, those involving the esophagus. Also provided herein are pharmaceutical compositions useful for the methods of the present invention. | 05-14-2009 |
Kamlesh Deshmukh, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100262448 | DETECTION OF PROCEDURAL DEFICIENCY ACROSS MULTIPLE BUSINESS APPLICATIONS - A method includes retrieving a plurality of data extractors to extract data across a plurality of business applications. The plurality data extractors are executed to generate a plurality of individual results sets. The plurality of individual results sets are combined into a combined result set. A rule is applied to the combined result set to detect a procedural deficiency across the plurality of business application. | 10-14-2010 |
Makarand Deshmukh, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090252330 | DISTRIBUTION OF STORAGE AREA NETWORK ENCRYPTION KEYS ACROSS DATA CENTERS - Efficient mechanisms are provided for transferring key objects associated with disk logical unit numbers and tape cartridges from one data center to another data center. A request is received to transfer a source data center key object from a source data center to a destination data center. The source data center key object corresponds to a data block, such as a disk logical unit number (LUN) or a tape cartridge, maintained in a storage area network (SAN) and includes a unique identifier, an encrypted key, and a wrapper unique identifier. The encrypted key is decrypted using a source data center key hierarchy. Key information is transmitted from the source data center to the destination data center. A destination data center key object is generated using a destination data center key hierarchy. | 10-08-2009 |
Manav Laxmikant Deshmukh, Sunnyvale, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110271069 | DISMOUNTING A STORAGE VOLUME - In response to an instruction to dismount a storage volume, for example, an object in the storage volume is identified and a handle that references the object is closed. Once an exclusive lock on the storage volume is acquired, the storage volume can be dismounted. The storage volume can then remounted. | 11-03-2011 |
Padmanabh Y. Deshmukh, Fremont, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090055251 | DIRECTED ONLINE ADVERTISING SYSTEM AND METHOD - A system is provided for managing a sales person. An automating server is configured to automate management of sales activities of the sales person selling an electronic advertisement product. A categorizing module is coupled to the automating server. The categorizing module is configured to define a category for businesses located within a targeted geographical area. A territory creation module is coupled to the automating server. The territory creator is configured to define a sales territory within the targeted geographical area for the sales person. The automating server is further configured to create the electronic advertisement product for the business based on the category and the sales territory. The automating server is further configured to generate leads for the sales person to sell the electronic advertisement product to the business within the sales territory. | 02-26-2009 |
Shashank Deshmukh, Santa Clara, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080264904 | METHODS TO ELIMINATE "M-SHAPE" ETCH RATE PROFILE IN INDUCTIVELY COUPLED PLASMA REACTOR - An inductively-coupled plasma processing chamber has a chamber with a ceiling. A first and second antenna are placed adjacent to the ceiling. The first antenna is concentric to the second antenna. A plasma source power supply is coupled to the first and second antenna. The plasma source power supply generates a first RF power to the first antenna, and a second RF power to the second antenna. A substrate support disposed within the chamber. The size of the first antenna and a distance between the substrate support are such that the etch rate of the substrate on the substrate support is substantially uniform. | 10-30-2008 |
Shashank Deshmukh, San Ramon, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090170333 | SHALLOW TRENCH ISOLATION ETCH PROCESS - Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer disposed thereon to define one or more STI structures. The substrate may be etched using a plasma formed from a process gas mixture to form one or more STI structures on the substrate, wherein the process gas mixture comprises a fluorine-containing gas and either a fluorocarbon-containing gas or a hydrofluorocarbon-containing gas. | 07-02-2009 |
Shashank Deshmukh, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090004870 | METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K MATERIAL GATE STRUCTURE - Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma. | 01-01-2009 |
| 20090017633 | ALTERNATIVE METHOD FOR ADVANCED CMOS LOGIC GATE ETCH APPLICATIONS - Methods for etching, such as for fabricating a CMOS logic gate are provided herein. In some embodiments, a method of etching includes (a) providing a substrate having a first stack and a second stack disposed thereupon, the first stack comprising a high-k dielectric layer, a metal layer formed over the high-k dielectric layer, and a first polysilicon layer formed over the metal layer, the second stack comprising a second polysilicon layer, wherein the first and second stacks are substantially equal in thickness; (b) simultaneously etching a first feature in the first polysilicon layer and a second feature in the second polysilicon layer until the metal layer in the first stack is exposed; (c) simultaneously etching the metal layer and second polysilicon layer to extend the respective first and second features into the first and second stacks; and (d) etching the high-k dielectric layer. | 01-15-2009 |
Shashank C. Deshmukh, San Ramon, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110146704 | METHODOLOGY FOR CLEANING OF SURFACE METAL CONTAMINATION FROM AN UPPER ELECTRODE USED IN A PLASMA CHAMBER - A method for cleaning metallic contaminants from an upper electrode used in a plasma chamber. The method comprises a step of soaking the upper electrode in a cleaning solution of concentrated ammonium hydroxide, hydrogen peroxide and water. The cleaning solution is free of hydrofluoric acid and hydrochloric acid. The method further comprises an optional step of soaking the upper electrode in dilute nitric acid and rinsing the cleaned upper electrode. | 06-23-2011 |
Shashank C. Deshmukh, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20080197110 | PULSED-PLASMA SYSTEM WITH PULSED SAMPLE BIAS FOR ETCHING SEMICONDUCTOR SUBSTRATES - A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process. | 08-21-2008 |
| 20080206900 | PULSED-PLASMA SYSTEM FOR ETCHING SEMICONDUCTOR STRUCTURES - A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is of a duration sufficiently short to substantially inhibit micro-loading in a reaction region adjacent to the sample, while the OFF state of the duty cycle is of a duration sufficiently long to substantially enable removal of a set of etch by-products from the reaction region. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process. | 08-28-2008 |
| 20080206901 | PULSED-PLASMA SYSTEM WITH PULSED REACTION GAS REPLENISH FOR ETCHING SEMICONDUCTOR STRUCTURES - A pulsed plasma system with pulsed reaction gas replenish for etching semiconductor structures is described. In an embodiment, a portion of a sample is removed by applying a pulsed plasma etch process. The pulsed plasma etch process comprises a plurality of duty cycles, wherein each duty cycle represents the combination of an ON state and an OFF state of a plasma. The plasma is generated from a reaction gas, wherein the reaction gas is replenished during the OFF state of the plasma, but not during the ON state. In another embodiment, a first portion of a sample is removed by applying a continuous plasma etch process. The continuous plasma etch process is then terminated and a second portion of the sample is removed by applying a pulsed plasma etch process having pulsed reaction gas replenish. | 08-28-2008 |
Subhash Deshmukh, San Jose, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090081876 | METHOD OF PREVENTING ETCH PROFILE BENDING AND BOWING IN HIGH ASPECT RATIO OPENINGS BY TREATING A POLYMER FORMED ON THE OPENING SIDEWALLS - High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment carried out periodically during the etch process. | 03-26-2009 |
| 20090156012 | METHOD FOR FABRICATING LOW K DIELECTRIC DUAL DAMASCENE STRUCTURES - Methods for forming dual damascene structures in low-k dielectric materials that facilitate reducing photoresist poison issues are provided herein. In some embodiments, such methods may include plasma etching a via through a first mask layer into a low-k dielectric material disposed on a substrate. The first mask layer may then be removed using a process including exposing the first mask layer to a first plasma comprising an oxygen containing gas and at least one of a dilutant gas or a passivation gas, and subsequently exposing the first mask layer to a second plasma comprising an oxygen containing gas and formed using one of either plasma bias power or plasma source power. An anti-reflective coating may then be deposited into the via and atop the low-k dielectric material. A trench may then be plasma etched through a second mask layer formed atop the anti-reflective coating into the low-k dielectric material. | 06-18-2009 |
| 20100330805 | METHODS FOR FORMING HIGH ASPECT RATIO FEATURES ON A SUBSTRATE - Methods for forming anisotropic features for high aspect ratio application in etch process are provided. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios. In one embodiment, a method for anisotropic etching a dielectric layer on a substrate includes providing a substrate having a patterned mask layer disposed on a dielectric layer in an etch chamber, supplying a gas mixture including at least a fluorine and carbon containing gas and a silicon fluorine gas into the etch chamber, and etching features in the dielectric layer in the presence of a plasma formed from the gas mixture. | 12-30-2010 |
Susheel Deshmukh, Santa Rosa, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20110098804 | STENTED TRANSCATHETER PROSTHETIC HEART VALVE DELIVERY SYSTEM AND METHOD - A percutaneous stented valve delivery device including an inner shaft, a sheath, and a delivery capsule. The sheath slidably receives the inner shaft. A capsule proximal zone is attached to the sheath. A capsule distal zone is configured to transition between normal and flared states. A diameter of the distal zone is greater in the flared state, and the capsule includes a shape memory component that naturally assumes the normal state. The device is operable to perform a reversible partial deployment procedure in which a portion of the prosthesis is exposed distal the capsule and allowed to radially expand. Subsequently, with distal advancement of the capsule, the distal zone transitions to the flared state and imparts a collapsing force onto the prosthesis, causing the prosthesis to radially collapse and become recaptured within the delivery capsule. The capsule can include a laser cut tube encapsulated by a polymer. | 04-28-2011 |
| 20110251679 | Transcatheter Prosthetic Heart Valve Delivery System and Method With Stretchable Stability Tube - A device for percutaneously delivering a stented prosthetic heart valve. The device includes an inner shaft, a delivery sheath, stability tube, and a handle. The delivery sheath is slidably disposed over the inner shaft, and includes a capsule compressively containing the prosthesis over the inner shaft. The stability tube is coaxially received over the delivery sheath, and includes a distal region. A circumferential rigidity of the capsule is greater than a circumferential rigidity of the distal region. In transitioning from a delivery state to a deployed state, the capsule is withdrawn from the prosthetic heart valve and at least partially into the distal region to permit the prosthesis to self-deploy. The capsule forces the distal region to stretch and expand in diameter. | 10-13-2011 |
| 20110251680 | Transcatheter Heart Valve Delivery System With Reduced Area Moment of Inertia - A device for percutaneously repairing a heart valve of a patient including a self-expanding, stented prosthetic heart valve and a delivery system. The delivery system includes delivery sheath slidably receiving an inner shaft forming a coupling structure. A capsule of the delivery sheath includes a distal segment and a proximal segment. An outer diameter of the distal segment is greater than that of the proximal segment. An area moment of inertia of the distal segment can be greater than an area moment of inertia of the proximal segment. Regardless, an axial length of the distal segment is less than the axial length of the prosthesis. In a loaded state, the prosthesis engages the coupling structure and is compressively retained within the capsule. The capsule is unlikely to kink when traversing the patient's vasculature, such as when tracking around the aortic arch, promoting recapturing of the prosthesis. | 10-13-2011 |
| 20110251682 | Transcatheter Prosthetic Heart Valve Delivery System With Funnel Recapturing Feature and Method - A delivery device for percutaneously deploying a stented prosthetic heart valve. The device includes a delivery capsule and a recapture sheath. The capsule is configured to compressively retain the prosthesis. The recapture sheath includes a funnel segment having a plurality of circumferentially spaced runners and a polymer overlay. The runners are attached to a shaft and terminate at a distal tip. The overlay surrounds the runners, and is bonded to the shaft but not to at least the tips. The funnel segment is transitionable from a normal condition to an expanded condition forming a funnel shape with a distally increasing diameter, and self-transitionable back toward the normal condition. The funnel segment facilitates sliding of the capsule over a partially deployed region of the prosthesis as part of a recapturing operation. The runners provide columnar strength, with the overlay controlling a shape of the funnel segment. | 10-13-2011 |
| 20110264200 | Prosthetic Heart Valve Delivery System with Spacing - A device for percutaneously deploying a stented prosthetic heart valve includes a distal portion, a spacing collar, and an outer collar. The distal portion provides a coupling structure configured to selectively engage the stented prosthetic heart valve. The spacing collar is located proximal to the distal portion. The spacing collar is transitionable from a loaded state to an activated state. The spacing collar in the loaded state has a radial dimension less than the spacing collar in the activated state. The outer collar is configured to be movable relative to the distal portion and the spacing collar. The outer collar is slidably disposed over the spacing collar to provide the loaded state and is slidably retracted from the spacing collar when in the activated state. | 10-27-2011 |
| 20110264201 | Transcatheter Prosthetic Heart Valve Post-Dilatation Remodeling Devices and Methods - A system and method for restoring (e.g., replacing) a defective heart valve of a patient. A delivery system is manipulated to percutaneously deliver and implant a stented prosthetic heart valve to a native heart valve. A post-dilatation balloon is percutaneously delivered to the implantation site, and a compliant segment thereof is arranged within a region of the implanted prosthesis. The balloon is inflated such that the compliant segment expands and contacts the prosthesis, expanding a remodeling region of the prosthesis to a remodeled state. With these and related techniques, remodeling of an implanted, stented prosthetic heart valve to better match the native valve shape is possible, providing many benefits such as reducing the risk of paravalvular leaks. | 10-27-2011 |
Susheel R. Deshmukh, Santa Rosa, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100262218 | Dual-Layer Medical Balloon and Process of Making - A dual-layer dilatation balloon, and a process of making such balloon, which includes an inner layer that includes a plasticizer and a polymer selected from the group consisting of a polyamide, a copolymer thereof, and a combination thereof, and an outer layer that includes an ethylene-propylene rubber. The dual-layer balloon optionally further includes a stent disposed on the balloon. The stent is optionally a drug-eluting stent. | 10-14-2010 |
Uday Deshmukh, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20090312118 | High performance nano-structured metalwood golf club heads and iron heads and components thereof - A metalwood coated at least partially with a nanostructure material offer improved performance over existing golf club heads made from a combination of steel and titanium alloys or composite club heads made in part or wholly from fiber-reinforced plastics (FRPs) and metallic sub-components. The components of the metalwood may be coated with variable thicknesses of electro-deposited nanostructure metals and alloys. | 12-17-2009 |
Uday V. Deshmukh, Carlsbad, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20120010019 | GOLF CLUB HEAD HAVING A MULTI-MATERIAL FACE - A golf club with a multi-material face is disclosed herein. More specifically, the golf club head in accordance with the present invention has a striking face that forms a pocket, wherein the pocket is filled with a secondary material having a lower density to improve the performance of the golf club head. The multi-material face disclosed in accordance with the present invention may generally have a characteristic time slope of greater than about 5 and less than about 50, wherein the characteristic time slope is determined based on the various data points collected according to the United States Golf Association's (USGA's) Characteristic Time (CT) test. | 01-12-2012 |
| 20120010020 | Golf club head having a multi-material face - A golf club with a multi-material face is disclosed herein. More specifically, the golf club head in accordance with the present invention has a striking face that forms a pocket, wherein the pocket is filled with a secondary material having a lower density to improve the performance of the golf club head. The multi-material face disclosed in accordance with the present invention may generally have a characteristic time slope of greater than about 5 and less than about 50, wherein the characteristic time slope is determined based on the various data points collected according to the United States Golf Association's (USGA's) Characteristic Time (CT) test. | 01-12-2012 |
Vinay D. Deshmukh, Cupertino, CA US
| Patent application number | Description | Published |
|---|---|---|
| 20100191670 | Quantifying The Output Of Credit Research Systems - A method of quantifying the value added by an internal company credit rating system is described. The method includes determining an internal company credit rating for a plurality of securities. The internal company credit rating for the plurality of securities and an external credit research agency original credit rating for each of the securities are inputted in a ratings history database. Data representative of a change of the external credit research agency original credit rating for at least one security of the plurality of securities to a new credit rating is received. Responsive to the change, data representative of a current price of the at least one security and a benchmark price of the at least one security is received. At least one metric is calculated to determine a correlation between the internal company credit ratings and the new external credit research agency for each of the plurality of securities. | 07-29-2010 |