| Patent application number | Description | Published |
|---|
| 20080265175 | Device for Detection of Excitation Using a Multiple Spot Arrangement - The invention relates to a device ( | 10-30-2008 |
| 20080273188 | Device arranged to measure a quantity relating to radiation and lithographic apparatus - A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor. | 11-06-2008 |
| 20080308745 | Device for Optical Excitation Using a Multiple Wavelength Arangement - The invention relates to a device for optical excitation, in particular luminescent excitation of biomolecules ( | 12-18-2008 |
| 20080316595 | Spectral purity filter for a multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method - A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m | 12-25-2008 |
| 20090072168 | Radical cleaning arrangement for a lithographic apparatus - A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited. | 03-19-2009 |
| 20090218514 | MULTI-SPOT INVESTIGATION APPARATUS - The invention relates to a method and an apparatus for the investigation of a sample material by multiple sample light spots ( | 09-03-2009 |
| 20090309048 | Radiation System and Lithographic Apparatus Comprising the Same - An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system. | 12-17-2009 |
| 20100039632 | RADIATION SOURCE, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus includes a radiation source configured to produce extreme ultraviolet radiation. The source includes a chamber in which a plasma is generated, and a mirror configured to reflect radiation emitted by the plasma. The mirror includes a multi-layer structure that includes alternating Mo/Si layers. A boundary Mo layer or a boundary Si layer or a boundary diffusion barrier layer of the alternating layers forms a top layer of the mirror, the top layer facing inwardly with respect to the chamber. A hydrogen radical generator is configured to generate hydrogen radicals in the chamber. The radicals are configured to remove debris generated by the plasma from the mirror. A support is constructed and arranged to support a patterning device configured to pattern the radiation to form a patterned beam of radiation. A projection system is constructed and arranged to project the patterned beam of radiation onto a substrate. | 02-18-2010 |
| 20100051788 | MULTI-SPOT INVESTIGATION APPARATUS - The invention relates to a method and an apparatus for the investigation of a sample material that is stored in the sample chamber ( | 03-04-2010 |
| 20100140464 | OPTICAL SYSTEM FOR MAPPING SIGNAL LIGHT ONTO A DETECTOR - The invention relates to an optical system that particularly allows an improved detection of signal light propagating from a light source ( | 06-10-2010 |
| 20100141909 | RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS - A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight. | 06-10-2010 |
| 20100149512 | SPECTRAL PURITY FILTER FOR MULTI-LAYER MIRROR, LITHOGRAPHIC APPARATUS INCLUDING SUCH MULTI-LAYER MIRROR, METHOD FOR ENLARGING THE RATIO OF DESIRED RADIATION AND UNDESIRED RADIATION, AND DEVICE MANUFACTURING METHOD - A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m | 06-17-2010 |
| 20110134410 | SPECTRAL PURITY FILTER FOR MULTI-LAYER MIRROR, LITHOGRAPHIC APPARATUS INCLUDING SUCH MULTI-LAYER MIRROR, METHOD FOR ENLARGING THE RATIO OF DESIRED RADIATION AND UNDESIRED RADIATION, AND DEVICE MANUFACTURING METHOD - A lithographic apparatus comprising a support configured to support a patterning device; a substrate table configured to hold a substrate; a projection system configured to project a pattern imparted to a radiation beam by the patterning device onto a target portion of the substrate; and a first multi-layer mirror and a second multi-layer mirror, the first multi-layer mirror and the second multi-layer minor being arranged along a path of the radiation beam, the first multi-layer minor and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer minor configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range, wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range. | 06-09-2011 |
