Patent application number | Description | Published |
20090285010 | Write Assist Circuit for Improving Write Margins of SRAM Cells - A memory circuit includes a memory array, which further includes a plurality of memory cells arranged in rows and columns; a plurality of first bit-lines, each connected to a column of the memory array; and a plurality of write-assist latches, each connected to one of the plurality of first bit-lines. Each of the plurality of write-assist latches is configured to increase a voltage on a connecting one of the plurality of first bit-lines. | 11-19-2009 |
20100246311 | CLOCK GENERATORS, MEMORY CIRCUITS, SYSTEMS, AND METHODS FOR PROVIDING AN INTERNAL CLOCK SIGNAL - A clock generator includes a first input end and a second input end. The first input end is capable of receiving a first clock signal including a first state transition and a second state transition defining a first pulse width. The second input end is capable of receiving a second clock signal having a third state transition. A time period ranges from the first state transition to the third state transition. The clock generator can compare the first pulse width and the time period. The clock generator can output a third clock signal having a second pulse width ranging from a fourth state transition to a fifth state transition. The fifth state transition of the third clock signal is capable of being triggered by the second state transition of the first clock signal or the third state transition of the second clock signal depending on the comparison of the first pulse width and the time period. | 09-30-2010 |
20110280096 | MEMORY CIRCUITS HAVING A PLURALITY OF KEEPERS - A memory circuit includes a first plurality of memory arrays disposed in a column fashion. The memory circuit includes a first plurality of keepers each of which is electrically coupled with a corresponding one of the first plurality of memory arrays. A first current limiter is electrically coupled with and shared by the first plurality of keepers. A first plurality of sector switches each are electrically coupled between the first current limiter and a respective one of the first plurality of keepers. | 11-17-2011 |
20120014201 | DUAL RAIL MEMORY - A memory comprising: a plurality of memory cells arranged in a plurality of rows and a plurality of columns. A column of the plurality of columns including a first power supply node configured to provide a first voltage, a second power supply node configured to provide a second voltage, a plurality of internal supply nodes electrically coupled together and configured to receive the first voltage or the second voltage for a plurality of memory cells in the column and a plurality of internal ground nodes. The internal ground nodes electrically coupled together and configured to provide at least two current paths for the plurality of memory cells in the column. | 01-19-2012 |
20120019312 | RECYCLING CHARGES - A circuit includes a first node; a second node; a first PMOS transistor having a source coupled to the first node, a drain coupled to a first control transistor, and a gate driven by a first voltage; and a first NMOS transistor having a source coupled to the second node, a drain coupled to the first control transistor, and a gate driven by a second voltage. The first PMOS transistor is configured to automatically turn off based on the first voltage and a first node voltage at the first node. The first NMOS transistor is configured to automatically turn off based on the second voltage and a second node voltage at the second node. When the first PMOS transistor, the control transistor, and the first NMOS transistor are on, the first node voltage is lowered while the second voltage is raised. | 01-26-2012 |
20120020169 | TWO-PORT SRAM WRITE TRACKING SCHEME - A Static Random Access Memory (SRAM) includes at least two memory cells sharing a read bit line (RBL) and a write bit line (WBL). Each memory cell is coupled to a respective read word line (RWL) and a respective write word line (WWL). A write tracking control circuit is coupled to the memory cells for determining a write time of the memory cells. The write tracking control circuit is capable of receiving an input voltage and providing an output voltage. The respective RWL and the respective WWL of each memory cell are asserted during a write tracking operation. | 01-26-2012 |
20120020176 | GENERATING AND AMPLIFYING DIFFERENTIAL SIGNALS - Some embodiments regard a circuit comprising: a first left transistor having a first left drain, a first left gate, and a first left source; a second left transistor having a second left drain, a second left gate, and a second left source; a third left transistor having a third left drain, a third left gate, and a third left source; a first right transistor having a first right drain, a first right gate, and a first right source; a second right transistor having a second right drain, a second right gate, and a second right source; a third right transistor having a third right drain, a third right gate, and a third right source; a left node electrically coupling the first left drain, the second left drain, the second left gate, the third right gate, and the third left drain; and a right node electrically coupling the first right drain, the second right drain, the second right gate, the third left gate, and the third right drain. | 01-26-2012 |
20120061764 | MODIFIED DESIGN RULES TO IMPROVE DEVICE PERFORMANCE - The layouts, device structures, and methods described above utilize dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures to the dummy device. Such extension of diffusion regions resolves or reduces LOD and edge effect issues. In addition, treating the gate structure of a dummy device next to an edge device also allows only one dummy structure to be added next to the dummy device and saves the real estate on the semiconductor chip. The dummy devices are deactivated and their performance is not important. Therefore, utilizing dummy devices to extend the diffusion regions of edge structures and/or non-allowed structures according to design rules allows the resolution or reduction or LOD and edge effect issues without the penalty of yield reduction or increase in layout areas. | 03-15-2012 |
20120182819 | RECYCLING CHARGES - A circuit includes a first node; a second node; a first PMOS transistor having a source coupled to the first node, a drain coupled to a first control transistor, and a gate driven by a first voltage; and a first NMOS transistor having a source coupled to the second node, a drain coupled to the first control transistor, and a gate driven by a second voltage. The first PMOS transistor is configured to automatically turn off based on the first voltage and a first node voltage at the first node. The first NMOS transistor is configured to automatically turn off based on the second voltage and a second node voltage at the second node. When the first PMOS transistor, the control transistor, and the first NMOS transistor are on, the first node voltage is lowered while the second voltage is raised. | 07-19-2012 |
20120206983 | TRACKING SCHEME FOR MEMORY - A memory has a tracking circuit for a read tracking operation. The memory includes a memory bit cell array, a tracking column, a tracking row, a sense amplifier row coupled to the memory bit cell array and the tracking row, and a sense amplifier enable logic. The memory further includes a tracking bit line coupled to the tracking column and the sense amplifier enable logic, and a tracking word line coupled to the tracking row and the sense amplifier enable logic. The tracking circuit is configured to track a column time delay along the tracking column before a row time delay along the tracking row. | 08-16-2012 |
20120230127 | Providing Row Redundancy to Solve Vertical Twin Bit Failures - A circuit includes a failure address register configured to store a first row address, a row address modifier coupled to the failure address register, wherein the row address modifier is configured to modify the first row address received from the failure address register to generate a second row address. A first comparator is configured to receive and compare the first row address and a third row address. A second comparator is configured to receive and compare the second row address and the third row address. The first and the second row addresses are failed row addresses in a memory. | 09-13-2012 |
20130010560 | GENERATING AND AMPLIFYING DIFFERENTIAL SIGNALS - A circuit includes a first node, a second node, a first current mirror circuit, and a second current minor circuit. The first current mirror circuit has a reference end and a mirrored end. The reference end of the first current minor circuit is coupled to the first node, and the mirrored end of the first current minor circuit is coupled to the second node. The second current minor circuit has a reference end and a mirrored end. The reference end of the second current minor circuit is coupled to the second node, and the mirrored end of the second current minor circuit is coupled to the first node. | 01-10-2013 |
20130088925 | LAYOUT OF MEMORY CELLS - A semiconductor structure includes a first strap cell, a first read port, and a first VSS terminal. The first strap cell has a first strap cell VSS region. The first read port has a first read port VSS region, a first read port read bit line region, and a first read port poly region. The first VSS terminal is configured to electrically couple the first strap cell VSS region and the first read port VSS region. | 04-11-2013 |
20130088926 | TRACKING MECHANISMS - A tracking edge of a tracking signal is activated. A buffer is turned off and a latching circuit is turned on, based on the tracking edge of the tracking signal. A buffer output of the buffer is coupled to a latch output of the latching circuit at a node. The buffer receives a data line of a memory macro. | 04-11-2013 |
20130088927 | SYSTEM AND METHOD FOR GENERATING A CLOCK - A first clock is received by a memory macro. In response to a first clock transition of the first clock, a first transition of a second clock and of a third clock is generated. A tracking transition of a tracking signal is caused by the second clock. Based on a later transition of a second clock transition of the first clock and the tracking transition of the tracking signal, a second transition of the third clock is generated. The third clock is for use by an input-output of the memory macro. | 04-11-2013 |
20130182512 | MEMORY CIRCUITS HAVING A PLURALITY OF KEEPERS - A circuit including a memory circuit, the memory circuit includes a first plurality of memory arrays and a first plurality of keepers, each keeper of the first plurality of keepers is electrically coupled with a corresponding one of the first plurality of memory arrays. The memory circuit further includes a first current limiter electrically coupled with and shared by the first plurality of keepers. | 07-18-2013 |
20130215693 | TRACKING CAPACITIVE LOADS - A time delay is determined to cover a timing of a memory cell in a memory macro having a tracking circuit. Based on the time delay, a capacitance corresponding to the time delay is determined. A capacitor having the determined capacitance is utilized. The capacitor is coupled to a first data line of a tracking cell of the tracking circuit. A first transition of the first data line causes a first transition of a second data line of the memory cell. | 08-22-2013 |
20130264718 | LAYOUT OF MEMORY STRAP CELL - A layout structure includes a substrate, a well, a first dopant area, a second dopant area, a first poly region, a third dopant area, a fourth dopant area, and a second poly region. The well is in the substrate. The first poly region is in between the first dopant area and the second dopant area. The second poly region is in between the third dopant area and the fourth dopant area. The first dopant area, the second dopant area, the third dopant area, and the fourth dopant area are in the well. The first dopant area is configured to serve as a source of a transistor and to receive a first voltage value from a first power supply source. The well is configured to serve as a bulk of the transistor and to receive a second voltage value from a second power supply source. | 10-10-2013 |
20130311964 | MODIFIED DESIGN RULES TO IMPROVE DEVICE PERFORMANCE - A method of designing a layout of devices includes designing a layout of gate structures and diffusion regions of a plurality of devices. The method further includes identifying an edge device of the plurality of devices. The method further includes adding a dummy device next to the edge device and a dummy gate structure next to the dummy device, wherein the dummy device shares a diffusion region with the edge device, and wherein a gate structure of the dummy device is considered to be one of two dummy gate structures added next to the edge device. | 11-21-2013 |
20140015582 | SLICER AND METHOD OF OPERATING THE SAME - This description relates to a slicer including a first latch. The first latch includes an evaluating transistor configured to receive a first clock signal and a developing transistor configured to receive a second clock signal. The first clock signal is different from the second clock signal. The first latch includes first and second input transistors configured to receive first and second complementary inputs. The first latch includes at least one pre-charging transistor configured to receive a third clock signal. The first latch further at least one cross-latched pair of transistors, the at least one cross-latched transistor pair connected between the evaluating transistor and the first and second output nodes. The slicer includes a second latch connected to the first and second output nodes and to a third output node. The slicer includes a buffer connected to the third output node and configured to generate a final output signal. | 01-16-2014 |
20140032871 | TRACKING MECHANISM FOR WRITING TO A MEMORY CELL - A circuit includes a tracking write circuit and a write circuit. Various write signals of the write circuit are generated based on tracking signals of the tracking write circuit. The write signals are used in a write operation of a memory cell. | 01-30-2014 |
20140085993 | MULTIPLE BITCELLS TRACKING SCHEME SEMICONDUCTOR MEMORY ARRAY - A read tracking system and method for advanced memory devices are provided. The read tracking system and method include tracking multiple tracking bit cells in multiple segments and columns to incorporate device performance variation of bit cells in the memory array. The tracking path mimics the worst-case read path with some built-in margins to sufficiently and efficiently cover the read times of bit cells in a memory array without unnecessarily sacrificing the read speed performance of the memory array. A number of tracking cells may be placed at different segments and both sides of the memory array to cover read time variation across memory array. | 03-27-2014 |
20140092675 | TWO-PORT SRAM WRITE TRACKING SCHEME - A write tracking control circuit includes an input node, and a first transistor configured to pre-charge a word bit line connected to at least two memory cells. The write tracking control circuit further includes a second transistor configured to pre-charge a read bit line connected to the at least two memory cells. The write tracking control circuit further includes a first delay circuit between the input node and the first transistor, the first delay circuit configured to introduce a first delay time, wherein a gate of the first transistor is connected to the first delay circuit. The write tracking control circuit further includes a second delay circuit between the input node and the second transistor, the second delay circuit configured to introduce a second delay time different from the first delay time, wherein a gate of the second transistor is connected to the second delay circuit. | 04-03-2014 |
20140119426 | SLICER AND METHOD OF OPERATING THE SAME - A slicer includes a first latch. The first latch includes an evaluating transistor configured to receive a first clock signal. The first latch further includes a developing transistor configured to receive a second clock signal, wherein the first clock signal is different from the second clock signal. The first latch further includes a first input transistor configured to receive a first input. The first latch further includes a second input transistor configured to receive a second input, wherein the first and second input transistors are connected with the developing transistor. The first latch further includes at least one pre-charging transistor configured to receive a third clock signal, wherein the at least one pre-charging transistor is connected to a first output node and a second output node. The slicer further includes a second latch connected to the first and second output nodes and to a third output node. | 05-01-2014 |
20140138776 | CELL CIRCUITS AND LAYOUTS USED IN WRITE TRACKING CIRCUITS AND READ TRACKING CIRCUITS - A circuit includes a first transistor and a second transistor of a first type, a first transistor, a second transistor, a third transistor, and a fourth transistor of a second type. The first and second transistors of the first type, and the first transistor and the second transistor of the second type form a cross latch having a first node and a second node. A first terminal of the third transistor of the second type is coupled with the first node. A first terminal of the fourth transistor of the second type is coupled with the second node. At least one of a second terminal of the third transistor of the second type or a second terminal of the fourth transistor of the second type is configured to receive a signal sufficient to turn off the third transistor or the fourth transistor that is not directly from a power source. | 05-22-2014 |
20140140158 | PRE-CHARGING A DATA LINE - A control circuit includes a data driver, a charge circuit, and a first data line coupled with the data driver and the charge circuit. The charge circuit is configured to charge the first data line when the first data line is selected for accessing a memory cell corresponding to the first data line and to not charge the first data line when the first data line is not selected for accessing the memory cell. The data driver, based on a first control signal, is configured to transfer a signal on the first data line to an output of the data driver. | 05-22-2014 |
20140247675 | MULTIPLE BITCELLS TRACKING SCHEME SEMICONDUCTOR MEMORY ARRAY - A memory array includes a memory segment having at least one memory bank. The at least one memory bank includes an array of memory cells, and wherein at least two first read tracking cells are disposed in a read tracking column of the at least one memory bank. The memory array further includes a read tracking circuit coupled to the at least two first read tracking cells. Outputs of the at least two first read tracking cells are connected to a tracking bit connection line (TBCL). A tracking circuit connected to the TBCL is configured to output a tracking-cells output signal to generate a global tracking result signal to a memory control circuitry. The memory control circuitry is configured to reset a memory clock based on the global tracking result signal. | 09-04-2014 |
20140269026 | TRACKING CIRCUIT - A circuit is in a memory macro and comprises a write path, a read path, a selection circuit, and a clock generator circuit. The write path includes a first signal generated based on a first edge of a clock signal in a write operation of the memory macro. The read path includes a second signal generated based on a first edge of the clock signal in a read operation of the memory macro. The selection circuit is configured to select the first signal as a third signal in the write operation of the memory macro, and to select the second signal as the third signal in the read operation of the memory macro. The clock generator circuit is configured to generate a second edge of the clock signal in the write operation or in the read operation based on the third signal. | 09-18-2014 |
20140282318 | TIMING DELAY CHARACTERIZATION METHOD, MEMORY COMPILER AND COMPUTER PROGRAM PRODUCT - In a timing delay characterization method, a signal path between an input terminal and an output terminal of a semiconductor circuit is divided into an input stage, a processing stage, and an output stage. An operation of the input stage is simulated at various input parameter values of an input parameter at the input terminal to obtain corresponding extrinsic input timing delays associated with the input stage. An operation of the processing stage is simulated to obtain an intrinsic timing delay associated with the processing stage. An operation of the output stage is simulated at various output parameter values of an output parameter at the output terminal to obtain corresponding extrinsic output timing delays associated with the output stage. A timing delay data store is generated or populated based on the extrinsic input timing delays, the extrinsic output timing delays and the intrinsic timing delay. | 09-18-2014 |
20140282319 | SEMICONDUCTOR CIRCUIT DESIGN METHOD, MEMORY COMPILER AND COMPUTER PROGRAM PRODUCT - A semiconductor circuit includes an array of repeating blocks, each of the blocks having a device, and at least one signal line connecting the devices of the blocks. A model of the semiconductor circuit is generated to include a functional area corresponding to at least one first block of the array, and a loading area corresponding to at least one second block of the array. In the functional area, parasitic parameters of the at least one signal line and the device of the at least one first block are extracted. In the loading area, parasitic parameters of the at least one signal line are extracted, but parasitic parameters of the device of the at least one second block are not extracted. | 09-18-2014 |
20150029797 | MEMORY MACRO WITH A VOLTAGE KEEPER - A memory macro comprises a data line, a first interface circuit comprising a first node coupled to the data line, and a voltage keeper configured to control a voltage level at the first node, and a second interface circuit comprising a second node coupled with the data line, wherein the voltage keeper is configured to control a voltage level at the second node via the data line. | 01-29-2015 |
20150071016 | TRACKING MECHANISMS - A memory macro includes a plurality of segments corresponding to a plurality of tracking circuits. Each segment of the plurality of segments thereby corresponds to one tracking circuit of the plurality of tracking circuits. In response to a read operation of a memory cell of a segment, a tracking circuit corresponding to the segment is configured to generate an edge of a tracking signal based on which a first edge of a cell signal associated with the memory cell is generated. | 03-12-2015 |