| Patent application number | Description | Published |
|---|
| 20080223437 | Solar cell contact fingers and solder pad arrangement for enhanced efficiency - A solar cell includes negative metal contact fingers electrically connected to N-type diffusion regions of the solar cell and positive metal contact fingers electrically connected to P-type diffusion regions of the solar cell. Both the N-type and P-type diffusion regions are on the backside of the solar cell. The solar cell includes a front side that faces the sun during normal operation. The negative and positive metal contact fingers may be interdigitated. For increased solar radiation collection, the metal contact fingers may be arranged to point to and collectively cover portions of a perimeter of a solder pad. For example, the negative metal contact fingers may be arranged to point to and collectively cover two or three sides of a solder pad. | 09-18-2008 |
| 20080314443 | BACK-CONTACT SOLAR CELL FOR HIGH POWER-OVER-WEIGHT APPLICATIONS - A solar cell is described. The solar cell is fabricated on a substrate, the substrate having a front surface and a back surface. The substrate includes, at the front surface, a first region having a first global thickness and a second region having a second global thickness. The second global thickness is greater than the first global thickness. A plurality of alternating n-type and p-type doped regions is disposed at the back surface of the substrate. | 12-25-2008 |
| 20090151784 | Anti-Reflective Coating With High Optical Absorption Layer For Backside Contact Solar Cells - A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact solar cell. The anti-reflection structure may include a passivation level, a high optical absorption layer over the passivation level, and a low optical absorption layer over the high optical absorption layer. The passivation level may include silicon dioxide thermally-grown on a textured surface of the solar cell substrate, which may be an N-type silicon substrate. The high optical absorption layer may be configured to block at least 10% of UV radiation coming into the substrate. The high optical absorption layer may comprise high-k silicon nitride and the low optical absorption layer may comprise low-k silicon nitride. | 06-18-2009 |
| 20090260673 | Preventing Harmful Polarization Of Solar Cells - In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell. | 10-22-2009 |
| 20090308438 | Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions - A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage. | 12-17-2009 |
| 20100307562 | Preventing Harmful Polarization Of Solar Cells - In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell. | 12-09-2010 |
| 20110000540 | Back Side Contact Solar Cell Structures And Fabrication Processes - In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments. | 01-06-2011 |
| 20110003424 | Back Side Contact Solar Cell Structures And Fabrication Processes - In one embodiment, active diffusion junctions of a solar cell are formed by diffusing dopants from dopant sources selectively deposited on the back side of a wafer. The dopant sources may be selectively deposited using a printing method, for example. Multiple dopant sources may be employed to form active diffusion regions of varying doping levels. For example, three or four active diffusion regions may be fabricated to optimize the silicon/dielectric, silicon/metal, or both interfaces of a solar cell. The front side of the wafer may be textured prior to forming the dopant sources using a texturing process that minimizes removal of wafer material. Openings to allow metal gridlines to be connected to the active diffusion junctions may be formed using a self-aligned contact opening etch process to minimize the effects of misalignments. | 01-06-2011 |
| 20110059571 | Trench Process and Structure for Backside Contact Solar Cells with Polysilicon Doped Regions - A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. An interrupted trench structure separates the P-type doped region from the N-type doped region in some locations but allows the P-type doped region and the N-type doped region to touch in other locations. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. Among other advantages, the resulting solar cell structure allows for increased efficiency while having a relatively low reverse breakdown voltage. | 03-10-2011 |
