Denifl
Guenter Denifl, Annenheim AT
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20130280888 | Methods of Forming Semiconductor Devices - In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed. | 10-24-2013 |
20140235035 | Methods of Forming Semiconductor Devices - In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. The dummy fill material is removed. | 08-21-2014 |
20140335700 | Carbon Layers for High Temperature Processes - Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking. | 11-13-2014 |
20150175467 | MOLD, METHOD FOR PRODUCING A MOLD, AND METHOD FOR FORMING A MOLD ARTICLE - Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of a mold. | 06-25-2015 |
20160027677 | Substrate Carrier System for Moving Substrates in a Vertical Oven and Method for Processing Substrates - A substrate carrier system for moving substrates in a vertical oven and a method for processing substrates are disclosed. In some embodiments, a method for oxidizing material or depositing material includes carrying a plurality of substrates by a substrate carrier and inserting the substrate carrier into a vertical oven, wherein the plurality of substrates are held by the substrate carrier in predefined positions, wherein an angle measured between a main surface of a substrate of the plurality of substrates at one of the predefined positions and a vertical direction is less than 20 degrees. The method further includes oxidizing a material on the plurality of substrates or depositing a material onto the plurality of substrates. | 01-28-2016 |
Guenther Denifl, Annenheim AT
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20130273326 | PROCESSING A SACRIFICIAL MATERIAL DURING MANUFACTURE OF A MICROFABRICATED PRODUCT - A method for processing a sacrificial material of an intermediate microfabricated product includes forming a hydrogen-containing carbon layer on a surface of a base structure and releasing hydrogen from the hydrogen-containing carbon layer to obtain a hydrogen-released (i.e., densified) carbon layer with low shrink. The method further includes forming a structural layer on at least a portion of a surface of the hydrogen-released carbon layer, and oxidizing the hydrogen-released (densified) carbon layer to release the structural layer. In this manner, a cavity is formed between the base structure and the structural layer. The ashing of the hydrogen-released carbon layer leaves substantially no residues within the cavity of the intermediate or final microfabricated product. Further embodiments provide a method for manufacturing a microfabricated product, to an intermediate microfabricated product, and to a microfabrication equipment. | 10-17-2013 |
Günter Denifl, Annenheim AT
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20160031701 | Micromechanical Structure and Method for Fabricating the Same - A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. The functional structure includes a conductive base layer and a functional structure comprising a stiffening structure having a stiffening structure material arranged at the conductive base layer and only partially covering the conductive base layer at the functional region. The stiffening structure material includes a silicon material and at least a carbon material. | 02-04-2016 |
Peter Denifl, Helinski FI
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20120101240 | PREPARATION OF PRECIPITATED ZN PP CATALYSTS WITH INTERNAL PORE STRUCTURE USING NANOPARTICLES - Process for the preparation of a catalyst being in the form of solid particles comprising the steps of preparing a solution of a complex of a metal which is selected from one of the groups 1 to 3 of the periodic table (IUPAC) and an electron donor by reacting a compound of said metal with said electron donor in an organic liquid reaction medium; adding to said solution solid material obtaining a suspension, said solid material does not comprise catalytically active sites, has a specific surface area below 500 m | 04-26-2012 |