| Patent application number | Description | Published |
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| 20080244338 | Soft bit data transmission for error correction control in non-volatile memory - Data stored in non-volatile storage is decoded using iterative probabilistic decoding. An error correcting code such as a low density parity check code may be used. In one approach, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding sensed states of a set of non-volatile storage element. The decoding attempts to converge by adjusting the reliability metrics for bits in code words which represent the sensed state. Soft data bits are read from the memory if the decoding fails to converge. Initial reliability metric values are provided after receiving the hard read results and at each phase of the soft bit operation(s). In one embodiment, a second soft bit is read from the memory using multiple subsets of soft bit compare levels. While reading at the second subset of compare levels, decoding can be performed based on the first subset data. | 10-02-2008 |
| 20080244360 | Non-Volatile Memory with Soft Bit Data Transmission for Error Correction Control - Data stored in non-volatile storage is decoded using iterative probabilistic decoding. An error correcting code such as a low density parity check code may be used. In one approach, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding sensed states of a set of non-volatile storage element. The decoding attempts to converge by adjusting the reliability metrics for bits in code words which represent the sensed state. Soft data bits are read from the memory if the decoding fails to converge. Initial reliability metric values are provided after receiving the hard read results and at each phase of the soft bit operation(s). In one embodiment, a second soft bit is read from the memory using multiple subsets of soft bit compare levels. While reading at the second subset of compare levels, decoding can be performed based on the first subset data. | 10-02-2008 |
| 20080250300 | METHOD FOR DECODING DATA IN NON-VOLATILE STORAGE USING RELIABILITY METRICS BASED ON MULTIPLE READS - Data stored in non-volatile storage is decoded using iterative probabilistic decoding and multiple read operations to achieve greater reliability. An error correcting code such as a low density parity check code may be used. In one approach, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding read data of a set of non-volatile storage element. The decoding attempts to converge by adjusting the reliability metrics for bits in code words which represent the sensed state. If convergence does not occur, e.g., within a set time period, the state of the non-volatile storage element is sensed again, current values of the reliability metrics in the decoder are adjusted, and the decoding again attempts to converge. In another approach, the initial reliability metrics are based on multiple reads. Tables which store the reliability metrics and adjustments based on the sensed states can be prepared before decoding occurs. | 10-09-2008 |
| 20080273388 | ADJUSTING RESISTANCE OF NON-VOLATILE MEMORY USING DUMMY MEMORY CELLS - In some non-volatile storage systems, a block of data memory cells is manufactured with a dummy word line at the bottom of the block, at the top of the block, and/or at other locations. By selectively programming memory cells on the dummy word line(s), the resistances associated with the data memory cells can be changed to account for different programmed data patterns. | 11-06-2008 |
| 20090080265 | MULTIPLE BIT LINE VOLTAGES BASED ON DISTANCE - An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile storage elements, a second group of bit lines in communication with the second group of non-volatile storage elements, a first set of sense modules located at a first location and connected to the first group of bit lines, and a second set of sense modules located at a second location and connected to the second group of bit lines. The first set of sense modules applies a first bit line voltage based on the bit line distance between the first set of sense modules and the first group of non-volatile storage elements. The second set of sense modules applies a second bit line voltage based on the bit line distance between the second set of sense modules and the second group of non-volatile storage elements. | 03-26-2009 |
| 20090086544 | COMPENSATION OF NON-VOLATILE MEMORY CHIP NON-IDEALITIES BY PROGRAM PULSE ADJUSTMENT - To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements. | 04-02-2009 |
| 20110131473 | Method For Decoding Data In Non-Volatile Storage Using Reliability Metrics Based On Multiple Reads - Data stored in non-volatile storage is decoded using iterative probabilistic decoding and multiple read operations to achieve greater reliability. An error correcting code such as a low density parity check code may be used. In one approach, initial reliability metrics, such as logarithmic likelihood ratios, are used in decoding read data of a set of non-volatile storage element. The decoding attempts to converge by adjusting the reliability metrics for bits in code words which represent the sensed state. If convergence does not occur, e.g., within a set time period, the state of the non-volatile storage element is sensed again, current values of the reliability metrics in the decoder are adjusted, and the decoding again attempts to converge. | 06-02-2011 |
| 20110235428 | COMPENSATION OF NON-VOLATILE MEMORY CHIP NON-IDEALITIES BY PROGRAM PULSE ADJUSTMENT - To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements. | 09-29-2011 |
