Patent application number | Description | Published |
20100241782 | MEMORY ACCESS CONTROLLER, SYSTEMS, AND METHODS FOR OPTIMIZING MEMORY ACCESS TIMES - A configurable memory access controller and related systems and methods. In embodiments described herein, the configurable memory controller is adapted to provide a separate memory access configuration for each of a plurality of memory banks in a given memory system. The memory access configuration provided for each memory bank can either be to leave open or close at least one memory page in each memory bank. In this manner, a memory access configuration can be provided for each memory bank on an individualized basis to optimize memory access times based on the type of data activity in each memory bank. In embodiments described herein, the memory controller can also be configured to allow for dynamic configuration of one or more memory banks. Dynamic configuration involves changing or overriding the memory access configuration for a particular memory bank to optimize memory access times. | 09-23-2010 |
20150016203 | DRAM SUB-ARRAY LEVEL AUTONOMIC REFRESH MEMORY CONTROLLER OPTIMIZATION - A method of refreshing a dynamic random access memory (DRAM) includes detecting an open page of the DRAM at a row of a DRAM bank within an open sub-array of the DRAM bank. The method also includes delaying issuance of a refresh command to a target refresh row of the DRAM bank when the target refresh row of the DRAM bank is within the open sub-array of the DRAM bank. | 01-15-2015 |
20150085594 | METHOD AND APPARATUS FOR REFRESHING A MEMORY CELL - Memory devices may send information related to refresh rates to a memory controller. The memory controller may instruct the memory devices to refresh based on the received information. | 03-26-2015 |
20150134897 | METHOD AND APPARATUS FOR REFRESHING A MEMORY CELL - A method includes sending a first signal from a memory device to a memory controller. The first signal indicates to the memory controller that particular memory cells of the memory device are to be refreshed by the memory device. | 05-14-2015 |
20150243373 | KERNEL MASKING OF DRAM DEFECTS - Systems, methods, and computer programs are disclosed for kernel masking dynamic random access memory (DRAM) defects. One such method comprises: detecting and correcting a single-bit error associated with a physical address in a dynamic random access memory (DRAM); receiving error data associated with the physical address from the DRAM; storing the received error data in a failed address table located in a non-volatile memory; and retiring a kernel page corresponding to the physical address if a number of errors associated with the physical address exceeds an error count threshold. | 08-27-2015 |
20150261632 | SYSTEMS AND METHODS FOR REDUCING MEMORY FAILURES - Methods and systems for an in-system repair process that repairs or attempts to repair random bit failures in a memory device are provided. In some examples, an in-system repair process may select alternative steps depending on whether the failure is correctable or uncorrectable. In these examples, the process uses communications between a system on chip and the memory to fix the failures during normal operation. | 09-17-2015 |
20150293822 | SYSTEMS AND METHODS FOR RECOVERING FROM UNCORRECTED DRAM BIT ERRORS - Systems, methods, and computer programs are disclosed for recovering from dynamic random access memory (DRAM) defects. One method comprises determining that an uncorrected bit error has occurred for a physical codeword address associated with a dynamic random access memory (DRAM) device coupled to a system on chip (SoC). A kernel page associated with a DRAM page comprising the physical codeword address is identified as a bad page. Recovery from the uncorrected bit error is provided by rebooting a system comprising the SoC and the DRAM device. In response to the rebooting, the identified kernel page is excluded from being allocated for DRAM operation. | 10-15-2015 |
20150332735 | DYNAMIC CONTROL OF SIGNALING POWER BASED ON AN ERROR RATE - Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data. | 11-19-2015 |