Dechamp
Francois Dechamp, Cluny FR
Patent application number | Description | Published |
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20080312792 | Drive Assisting Method for Reversal Path with Drawn Vehicle - The invention relates to a drive assisting method for the reversal path of a vehicle which consists of a tow track and a trailer pivotable with respect thereto and is provided with a conventional mechanical steering device. The inventive method consists in selecting a target point (C), which the vehicle path should pass through, Determination in calculating the steering angle instruction β | 12-18-2008 |
20090306854 | Method for determining a set steering angle of steered wheels of a vehicle - The invention relates to a method for determining a set steering angle β | 12-10-2009 |
20100222964 | Method for Controlling the Steering Angle of the Vehicle Guiding Wheels - The invention relates to a method for controlling the steering angle β of the guiding wheels of a vehicle ( | 09-02-2010 |
20120116636 | METHOD FOR CONTROLLING A STEER-BY-WIRE STEERING SYSTEM - A method is aimed at controlling a steer-by-wire steering system of a vehicle having at least one steering axle having at least two steer wheels electronically controlled by a control member. In the case of asymmetric adhesion conditions, the method anticipates steering into the skid for the first steer wheel that is on the surface exhibiting the higher coefficient of adhesion—for example asphalt—so as to counter a moment applied to the Z-axis. At the same time, the second steer wheel which is on the surface having the lower coefficient of adhesion—for example a sheet of black ice—remains in the vehicle direction of travel or is oriented towards the second steer wheel in a snow plough mode. The vehicle stability is vastly improved when the vehicle regains an area of uniform adhesion. | 05-10-2012 |
Jerome Dechamp, Beaucroissant FR
Patent application number | Description | Published |
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20090120568 | METHOD OF TRANSFERRING A THIN FILM ONTO A SUPPORT - A method of transferring a thin film onto a first support, includes supplying a structure comprising a film of which at least one part originates from a solid substrate of a first material and which is solidly connected to a second support having a thermal expansion coefficient that is different from that of the first material and close to that of the first support, forming an embrittled area inside the film that defines the thin film to be transferred, affixing the film that is solidly connected to the second support to the first support, and breaking the film at the embrittled area. | 05-14-2009 |
Jérôme Dechamp, Saint Egreve FR
Patent application number | Description | Published |
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20100025228 | Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate - A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone. | 02-04-2010 |
Jérôme Dechamp, Saint Egreve FR
Patent application number | Description | Published |
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20100025228 | Method for Preparing Thin GaN Layers by Implantation and Recycling of a Starting Substrate - A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone. | 02-04-2010 |