| Patent application number | Description | Published |
|---|
| 20080239784 | HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS - A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a single write wire having a longitudinal axis substantially orthogonal to a longitudinal axis of each of the coplanar shift register structures. | 10-02-2008 |
| 20080239785 | HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS - A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a write wire having a constriction therein, the constriction located at a point corresponding to the location of the plurality of discontinuities in the associated shift register structure. | 10-02-2008 |
| 20080243972 | HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME - A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a single write wire having a longitudinal axis substantially orthogonal to a longitudinal axis of each of the coplanar shift register structures. | 10-02-2008 |
| 20090086534 | APPARATUS AND METHOD FOR IMPLEMENTING PRECISE SENSING OF PCRAM DEVICES - A precision sense amplifier apparatus includes a current source configured to introduce an adjustable reference current through a reference leg; a current mirror configured to mirror the reference current to a data leg, the data leg selectively coupled to a programmable resistance memory element; an active clamping device coupled to the data leg, and configured to clamp a fixed voltage across the memory element, thereby establishing a fixed current sinking capability thereof; and a differential sense amplifier having a first input thereof coupled to the data leg and a second input thereof coupled to the reference leg; wherein an output of the differential sense amplifier assumes a first logic state whenever the reference current is less than the fixed current sinking capability of the memory element, and assumes a second logic state whenever the reference current exceeds the fixed current sinking capability. | 04-02-2009 |
| 20090109735 | DESIGN STRUCTURE FOR INITIALIZING REFERENCE CELLS OF A TOGGLE SWITCHED MRAM DEVICE - A design structure embodied in a machine readable medium used in a design process includes an apparatus for initializing a reference cell in a toggle switched MRAM device, with a first sense amplifier configured for performing a first read operation of the reference cell by comparing current through the reference cell with the average current passing through a pair of data cells; a first latch for storing the result of the first read operation; a second latch for storing the result of a second read operation by the first sense amplifier, wherein the second read operation is performed following the first read operation and the inversion of the value of one of the pair of the data cells; a third latch for storing the result of a third read operation by the first sense amplifier, wherein the third read operation is performed following the second read operation and the inversion of the value of the other of the pair of the data cells; and a majority compare device configured to compare of the results of the first, second and third operations respectively stored in the first, second and third latches, wherein an output of the majority compare operation is the initial state of the reference cell. | 04-30-2009 |
| 20100002486 | MAGNETIC SHIFT REGISTER MEMORY DEVICE - In one embodiment, the invention is a magnetic shift register memory device. One embodiment of a memory cell includes a magnetic column including a plurality of magnetic domains, a reader coupled to the magnetic column, for reading data from the magnetic domains, a temporary memory for storing data read from the magnetic domains, and a writer coupled to the magnetic column, for writing data in the temporary memory to the magnetic domains. | 01-07-2010 |
