| Patent application number | Description | Published |
|---|
| 20090230465 | Trench-Gate Field Effect Transistors and Methods of Forming the Same - A field effect transistor includes a body region of a first conductivity type over a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminates within the semiconductor region. At least one conductive shield electrode is disposed in the gate trench. A gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode. A shield dielectric layer insulates the at lease one conductive shield electrode from the semiconductor region. A gate dielectric layer insulates the gate electrode from the body region. The shield dielectric layer is formed such that it flares out and extends directly under the body region. | 09-17-2009 |
| 20100065904 | High density trench field effect transistor - A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity type are in the well regions. Heavy body regions of the first conductivity type are in the well regions. The source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls to a top surface of the mesa regions. | 03-18-2010 |
| 20100140689 | Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100140696 | Trench-Based Power Semiconductor Devices With Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100140697 | Trench-Based Power Semiconductor Devices with Increased Breakdown Voltage Characteristics - Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed. | 06-10-2010 |
| 20100207205 | Structures and Methods for Improving Trench-Shielded Semiconductor Devices and Schottky Barrier Rectifier Devices - Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. | 08-19-2010 |
| 20100258862 | TRENCH-GATE FIELD EFFECT TRANSISTOR WITH CHANNEL ENHANCEMENT REGION AND METHODS OF FORMING THE SAME - A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region. | 10-14-2010 |
| 20110018059 | Shield Contacts in a Shielded Gate MOSFET - A semiconductor structure comprises an active region comprising trenches extending into a semiconductor region. Each trench includes a shield electrode and a gate electrode. The semiconductor structure also comprises a shield contact region adjacent to the active region. The shield contact region comprises at least one contact trench extending into the semiconductor region. The shield electrode from at least one of the trenches in the active region extends along a length of the contact trench. The semiconductor structure also comprises an interconnect layer extending over the active region and the shield contact region. In the active region the interconnect layer is isolated from the gate electrode in each trench by a dielectric layer and contacts mesa surfaces of the semiconductor region adjacent to the trenches. In the shield contact region the interconnect layer contacts the shield electrode and the mesa surfaces of the semiconductor region adjacent to the contact trench. | 01-27-2011 |
