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Davood
Davood Askari, Honolulu, HI US
| Patent application number | Description | Published |
|---|---|---|
| 20100327482 | POLYMER MATRIX COMPOSITES WITH NANO-SCALE REINFORCEMENTS - Embodiments of the present invention provide polymer matrix nanocomposites reinforced with nano-scale materials such as nanoparticles and carbon nanotubes and methods of fabricating. The nanomaterials are provided within relatively low weight fractions, for example in the range of approximately 0.01 to about 0.4% by weight and distributed within the matrix by a magnetic mixing procedure to provide substantially uniform reinforcement of the nanocomposites. Advantageously, these nanocomposites provide significantly enhanced tensile strength, strain to failure, and fracture toughness over corresponding neat matrices. | 12-30-2010 |
Davood Molkdar, Eastleigh GB
| Patent application number | Description | Published |
|---|---|---|
| 20090215418 | COMMUNICATION UNIT AND METHOD OF OPERATION THEREFOR - A communication unit for a radio communication system comprises a receiver for receiving data over an air interface. The receiver can operate in a first diversity mode and a second diversity mode. The first diversity mode may specifically correspond to no receive diversity being employed and the second diversity mode may correspond to signals from two or more fully or partially de-correlated antennas being combined. The communication unit comprises a data unit which determines a first data characteristic for a section of data to be received over the air interface. A switching unit is arranged to switch between the first diversity mode and the second diversity mode in response to the first data characteristic. The invention may allow improved performance and e.g. reduced power consumption by allowing an improved adaptation of diversity operation. In particular, an improved trade-off between power consumption and performance may be achieved in many embodiments. | 08-27-2009 |
Davood Parsapajouh, Tehran IR
| Patent application number | Description | Published |
|---|---|---|
| 20100281951 | Gas Permeability Measurement Apparatus - Gas permeability measurement apparatus is an apparatus for measuring all kinds of continuous-porous materials, including wood, paper, wood-composites, wood plastic composites (WPC), minerals, polymer-based materials, minerals, ceramics, textiles and fabrics. The apparatus is equipped with an electronic time measurement device with milli-second precision; this feature allows the permeability values to have improved accuracy and precision needed for scientific purposes. This apparatus uses falling liquid method wherein the liquid column can be easily changed according to test design. The apparatus is equipped with at least two sensors in the electronic time measurement device which are designed so that the distance between them can be easily set to 10, 15, and 20 cm. The sensors are mounted on a stand that can be moved along the liquid and gas traveling zone thereby enabling the length of liquid column to be fixed from 30 cm up to 2 meters. The main skeleton of the whole apparatus is designed so that the diameter of its glass tube may easily be changed from 0.5 to 5 cm in accordance to different standard stipulations, as well as the amount of liquid displacement required. | 11-11-2010 |
Davood Paydar, Vaughan CA
| Patent application number | Description | Published |
|---|---|---|
| 20100313498 | DECORATIVE MOLDING TRIMMING SYSTEM AND METHOD OF INSTALLING - This invention generally relates to a method and system for installing decorative moldings including a mounting block made of a soft and light material adapted to be secured to a wall and extended about a border thereof, said mounting block having a first contacting surface parallel to the wall and a second contacting surface oriented at an angle to a mounting surface of a crown molding, said first contacting surface having a parallel rigid member thereon for securing the mounting block to the wall and the second contacting surface having an angular oriented rigid member thereon for securing the decorative molding to the mounting block. | 12-16-2010 |
Davood Shahrjerdi, Yorktown Heights, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20100307572 | Heterojunction III-V Photovoltaic Cell Fabrication - A method for forming a heterojunction III-V photovoltaic (PV) cell includes performing layer transfer of a base layer from a wafer of a III-V substrate, the base layer being less than about 20 microns thick; forming an intrinsic layer on the base layer; forming an amorphous silicon layer on the intrinsic layer; and forming a transparent conducting oxide layer on the amorphous silicon layer. A heterojunction III-V photovoltaic (PV) cell includes a base layer comprising a III-V substrate, the base layer being less than about 20 microns thick; an intrinsic layer located on the base layer; an amorphous silicon layer located on the intrinsic layer; and a transparent conducting oxide layer located on the amorphous silicon layer. | 12-09-2010 |
| 20100307591 | Single-Junction Photovoltaic Cell - A method for forming a single-junction photovoltaic cell includes forming a dopant layer on a surface of a semiconductor substrate; diffusing the dopant layer into the semiconductor substrate to form a doped layer of the semiconductor substrate; forming a metal layer over the doped layer, wherein a tensile stress in the metal layer is configured to cause a fracture in the semiconductor substrate; removing a semiconductor layer from the semiconductor substrate at the fracture; and forming the single junction photovoltaic cell using the semiconductor layer. A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer. | 12-09-2010 |
| 20100310775 | Spalling for a Semiconductor Substrate - A method for spalling a layer from an ingot of a semiconductor substrate includes forming a metal layer on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot; and removing the layer from the ingot at the fracture. A system for spalling a layer from an ingot of a semiconductor substrate includes a metal layer formed on the ingot of the semiconductor substrate, wherein a tensile stress in the metal layer is configured to cause a fracture in the ingot, and wherein the layer is configured to be removed from the ingot at the fracture. | 12-09-2010 |
| 20110048516 | Multijunction Photovoltaic Cell Fabrication - A method for fabrication of a multijunction photovoltaic (PV) cell includes providing a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the smallest bandgap being located on the substrate to the junction having the largest bandgap being located on top of the stack; forming a top metal layer, the top metal layer having a tensile stress, on top of the junction having the largest bandgap; adhering a top flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the top metal layer. | 03-03-2011 |
| 20110048517 | Multijunction Photovoltaic Cell Fabrication - A method for fabrication of a multijunction photovoltaic (PV) cell includes forming a stack comprising a plurality of junctions on a substrate, each of the plurality of junctions having a respective bandgap, wherein the plurality of junctions are ordered from the junction having the largest bandgap being located on the substrate to the junction having the smallest bandgap being located on top of the stack; forming a metal layer, the metal layer having a tensile stress, on top of the junction having the smallest bandgap; adhering a flexible substrate to the metal layer; and spalling a semiconductor layer from the substrate at a fracture in the substrate, wherein the fracture is formed in response to the tensile stress in the metal layer. | 03-03-2011 |
Davood Shahrjerdi, Ossining, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20120118383 | Autonomous Integrated Circuit - An autonomous integrated circuit (IC) includes a solar cell formed on a bottom substrate of a silicon-on-insulator (SOI) substrate as a handle substrate; an insulating layer of the SOI substrate located on top of the solar cell; and a device layer formed on a top semiconductor layer of the SOI substrate located on top of the insulating layer, wherein a top contact of the device layer is electrically connected to a bottom contact of the solar cell such that the solar cell is enabled to power the device layer. | 05-17-2012 |
Davood Zaarei, Tehran IR
| Patent application number | Description | Published |
|---|---|---|
| 20100010119 | Corrosion-Resistant Epoxy Nanocomposite Coatings containing Submicron Emeraldine-Base Polyaniline and Organomodified Montmorrilonite - Disclosed is a method of preparation of corrosion-resistant epoxy coatings. The coating composition contains two main corrosion resistant factors: The first one was Eemeraldine-Base polyaniline (EB-PANi), dissolved in the aminic hardener of epoxy. The other one was montmorrilonite clay, dispersed or exfoliated in the base component of epoxy resin. The hardener composition was prepared via dissolution of EB-PANi in functional amines like 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine adopting sonication and nanoscale filtering methods. The base component was prepared via gradual charging of MMT clay in epoxy resin via high-shear mixing plus sonication method. The morphology of the coatings during different stages of preparation was studied by optical microscopy and scanning electron microscopy and TEM. The corrosion-protective performance of the resultant coatings was evaluated by electrochemical impedance spectroscopy and salt spray tests. The results were compared with those of conventional epoxy zinc-chromate and neat resin coatings. Superior corrosion resistance was achieved via dissolution of 0.5-2.5 wt % of EB-PANi in the aminic hardener and 2-4 WT % of organomodified MMT in base component of coating. | 01-14-2010 |