Patent application number | Description | Published |
20090261820 | WAFER FOR ELECTRICALLY CHARACTERIZING TUNNEL JUNCTION FILM STACKS WITH LITTLE OR NO PROCESSING - Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting. | 10-22-2009 |
20090267597 | Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing - Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting. | 10-29-2009 |
20090309145 | METHOD AND SYSTEM FOR PATTERNING OF MAGNETIC THIN FLIMS USING GASEOUS TRANSFORMATION - A magnetic thin film includes a magnetic tunnel junction defined by a surrounding region including a fluorinated, non-magnetic, electrically insulating material. | 12-17-2009 |
20090309587 | Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing - Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting. | 12-17-2009 |
20100023287 | Techniques for Electrically Characterizing Tunnel Junction Film Stacks with Little or no Processing - Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting. | 01-28-2010 |
20100320550 | Spin-Torque Magnetoresistive Structures with Bilayer Free Layer - Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer. | 12-23-2010 |
20110039020 | Magnetic Materials Having Superparamagnetic Particles - Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity. | 02-17-2011 |
20120329177 | SPIN-TORQUE MAGNETORESISTIVE STRUCTURES WITH BILAYER FREE LAYER - Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer. | 12-27-2012 |