| Patent application number | Description | Published |
|---|
| 20080241764 | Lithographic Method - The present invention provides a method of lithographic patterning in order to the strength of the patterned photoresist. The method comprises: applying to a surface to be patterned a photoresist ( | 10-02-2008 |
| 20090130611 | Lithographic Method - The present invention provides a method of lithographic patterning. The method comprisese: applying to a surface to be patterned a photoresist ( | 05-21-2009 |
| 20090311623 | PHOTOLITHOGRAPHY - The invention relates to a method of photolithography comprising the steps of: providing a substrate and forming a layer of a photoresist ( | 12-17-2009 |
| 20100028809 | DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY - A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spartial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools. | 02-04-2010 |
| 20100308833 | LIGHTING UNIT WITH COMPENSATION FOR OUTPUT FREQUENCY, AND METHOD FOR DETERMINING OUTPUT FREQUENCY - A method of determining the dominant output wavelength of an LED, comprises determining an electrical characteristic of the LED which is dependent on the voltage-capacitance characteristics, and analysing the characteristic to determine the dominant output wavelength. | 12-09-2010 |
| 20110031903 | SYSTEM AND METHOD FOR ESTIMATING THE JUNCTION TEMPERATURE OF A LIGHT EMITTING DIODE - A method of estimating the junction temperature of a light emitting diode comprises driving a forward bias current through the diode, the current comprising a square wave which toggles between high and low current values (I | 02-10-2011 |
| 20110109897 | MEASURING APPARATUS - An apparatus comprising at least one measuring cell ( | 05-12-2011 |
| 20110121705 | APPARATUS FOR REGULATING THE TEMPERATURE OF A LIGHT EMITTING DIODE - Apparatus for regulating the temperature of a light emitting diode (LED). The apparatus includes a heat sink, an LED mount, and an LED mounted on the LED mount. The LED mount is configured to change shape in response to a change in temperature. The change in shape alters the position of the LED relative to the heat sink, for adjusting heat transfer between the LED and the heat sink. The LED mount may include a laminated portion such as a bi-metallic strip. | 05-26-2011 |
| 20110133214 | LIGHT SENSOR DEVICE AND MANUFACTURING METHOD - A light sensor device comprises a substrate ( | 06-09-2011 |
| 20110150028 | SELF-CALIBRATION CIRCUIT AND METHOD FOR JUNCTION TEMPERATURE ESTIMATION - The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages. | 06-23-2011 |
