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David R. Medeiros
David R. Medeiros, West Stockbridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090186294 | ORGANIC GRADED SPIN ON BARC COMPOSITIONS FOR HIGH NA LITHOGRAPHY - An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer. | 07-23-2009 |
| 20100009132 | SELF-SEGREGATING MULTILAYER IMAGING STACK WITH BUILT-IN ANTIREFLECTIVE PROPERTIES - A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate. | 01-14-2010 |
David R. Medeiros, Ossining, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080213707 | Graded Spin-on Organic Antireflective Coating for Photolithography - An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer. | 09-04-2008 |
| 20080233517 | Negative Resists Based on Acid-Catalyzed Elimination of Polar Molecules - The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents. | 09-25-2008 |
| 20090321847 | HIGH PERFORMANCE CMOS DEVICES COMPRISING GAPPED DUAL STRESSORS WITH DIELECTRIC GAP FILLERS, AND METHODS OF FABRICATING THE SAME - The present invention relates to complementary metal-oxide-semiconductor (CMOS) devices having gapped dual stressors with dielectric gap fillers. Specifically, each CMOS device of the present invention includes at least one n-channel field effect transistor (n-FET) and at least one p-channel field effect transistor (p-FET). A tensilely stressed dielectric layer overlays the n-FET, and a compressively stressed dielectric layer overlays the p-FET. A gap is located between the tensilely and compressively stressed dielectric layers and is filled with a dielectric filler material. In one specific embodiment of the present invention, both the tensilely and compressively stressed dielectric layers are covered by a layer of the dielectric filler material, which is essentially free of stress. In an alternatively embodiment of the present invention, the dielectric filler material is only present in the gap between the tensilely and compressively stressed dielectric layers. | 12-31-2009 |
David R. Medeiros, Stockbridge, MA US
| Patent application number | Description | Published |
|---|---|---|
| 20090093114 | METHOD OF FORMING A DUAL-DAMASCENE STRUCTURE USING AN UNDERLAYER - A method of forming a dual-damascene wire. The method includes forming a via opening in a dielectric layer, filling the via opening with a polymeric formation including at least about 6% by weight of solids of thermal acid generator; heating the polymeric underlayer to a temperature greater than room temperature but less than about 180° C.; lithographically forming a trench in the dielectric layer and filling the via opening and the trench with an electrical conductor, a top surface of the electrical conductor substantially co-planer with the top surface of the second dielectric capping layer. | 04-09-2009 |
David R. Medeiros, Yorktown Heights, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080292825 | LOW TEMPERATURE MELT-PROCESSING OF ORGANIC-INORGANIC HYBRID - The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material. | 11-27-2008 |
David R. Medeiros, Dobbs Ferry, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20080227030 | Use of Mixed Bases to Enhance Patterned Resist Profiles on Chrome or Sensitive Substrates - Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making. | 09-18-2008 |
David R. Medeiros, Hopewell Junction, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20110207047 | Antireflective Hardmask Composition and a Method of Preparing a Patterned Material Using Same - An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate. | 08-25-2011 |
David R. Medeiros, Armonk, NY US
| Patent application number | Description | Published |
|---|---|---|
| 20110294068 | Self-Segregating Multilayer Imaging Stack With Built-In Antireflective Properties - A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate. | 12-01-2011 |