| Patent application number | Description | Published |
|---|
| 20090004870 | METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K MATERIAL GATE STRUCTURE - Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma. | 01-01-2009 |
| 20090221149 | MULTIPLE PORT GAS INJECTION SYSTEM UTILIZED IN A SEMICONDUCTOR PROCESSING SYSTEM - An apparatus having a multiple gas injection port system for providing a high uniform etching rate across the substrate is provided. In one embodiment, the apparatus includes a nozzle in the semiconductor processing apparatus having a hollow cylindrical body having a first outer diameter defining a hollow cylindrical sleeve and a second outer diameter defining a tip, a longitudinal passage formed longitudinally through the body of the hollow cylindrical sleeve and at least partially extending to the tip, and a lateral passage formed in the tip coupled to the longitudinal passage, the lateral passage extending outward from the longitudinal passage having an opening formed on an outer surface of the tip. | 09-03-2009 |
| 20090221150 | ETCH RATE AND CRITICAL DIMENSION UNIFORMITY BY SELECTION OF FOCUS RING MATERIAL - A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface. | 09-03-2009 |
| 20090236315 | SHIELDED LID HEATER ASSEMBLY - A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element. | 09-24-2009 |
| 20090272492 | PLASMA REACTOR WITH CENTER-FED MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub. | 11-05-2009 |
| 20090274590 | PLASMA REACTOR ELECTROSTATIC CHUCK HAVING A COAXIAL RF FEED AND MULTIZONE AC HEATER POWER TRANSMISSION THROUGH THE COAXIAL FEED - A workpiece support pedestal includes an insulating puck having a workpiece support surface, a conductive plate underlying the puck, the puck containing electrical utilities and thermal media channels, and an axially translatable coaxial RF path assembly underlying the conductive plate. The coaxial RF path assembly includes a center conductor, a grounded outer conductor and a tubular insulator separating the center and outer conductors, whereby the puck, plate and coaxial RF path assembly comprise a movable assembly whose axial movement is controlled by a lift servo. Plural conduits extend axially through the center conductor and are coupled to the thermal media utilities. Plural electrical conductors extend axially through the tubular insulator and are connected to the electrical utilities. | 11-05-2009 |
| 20090275206 | PLASMA PROCESS EMPLOYING MULTIPLE ZONE GAS DISTRIBUTION FOR IMPROVED UNIFORMITY OF CRITICAL DIMENSION BIAS - A passivation species precursor gas is furnished to an inner zone at a first flow rate, while flowing an etchant species precursor gas an annular intermediate zone at a second flow rate. Radial distribution of etch rate is controlled by the ratio of the first and second flow rates. The radial distribution of etch critical dimension bias on the wafer is controlled by flow rate of passivation gas to the wafer edge. | 11-05-2009 |
| 20110068082 | METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION - The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge. | 03-24-2011 |
| 20110120651 | SHOWERHEAD ASSEMBLY WITH IMPROVED IMPACT PROTECTION - Showerhead assemblies with improved impact protection are provided herein. In some embodiments, a showerhead assembly includes a body having a plenum disposed therein, the body having a plurality of first holes extending from the plenum to a substrate facing surface of the body; a plate disposed on the substrate facing surface of the body and having a plurality of second holes formed therethrough, each second hole corresponding with a respective first hole of the body; and a lip extending from the body and circumscribing the plate, the lip extending beyond a chamber facing surface of the plate. In some embodiments, the showerhead assembly is disposed in the inner volume of a process chamber. | 05-26-2011 |
| 20110157760 | ELECTROSTATIC CHUCK WITH REDUCED ARCING - Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener. | 06-30-2011 |
| 20110162803 | CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION - Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween. | 07-07-2011 |
